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STMicroelectronics STWA67N60M6

Name: STWA67N60M6
Brand: STMicroelectronics
SKU: STWA67N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA67N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA67N60M6.pdf

Description:: MOSFET N-CH 600V 52A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STWA67N60M6 from STMicroelectronics is an N-channel 600 V, 45 mΩ typ. (49 mΩ max.), 52 A MDmesh M6 superjunction power MOSFET in TO-247 long leads package, designed for high-efficiency switching in LLC and boost PFC converters. It features 100% avalanche tested ruggedness, Zener-protected gate, low gate input resistance, and 15 V/ns diode recovery dv/dt capability.

For engineers reviewing the STWA67N60M6 datasheet, STWA67N60M6 pinout, STWA67N60M6 application, or STWA67N60M6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_AS = 900 mJ single-pulse avalanche energy, C_oss,eq = 520 pF at 480 V, and 72.5 nC total gate charge under 480 V/52 A conditions.

Technical Context

This MOSFET employs ST's MDmesh M6 technology, delivering improved R_DS(on)/area over prior generations while maintaining robust switching behavior. Its 0.38 °C/W R_thJC and 100 V/ns MOSFET dv/dt ruggedness enable stable operation in hard-switched topologies with high voltage transients.

The device integrates a fast-recovery body diode (t_rr = 348 ns @ T_j = 25 °C, Q_rr = 5.6 µC) and exhibits low C_iss = 3400 pF and ultra-low C_rss = 2 pF - critical for minimizing Miller-induced turn-on risk in high-frequency resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC-link applications with ≥50% voltage margin for transient spikes in industrial PFC stages
R_DS(on) max	49 mΩ @ V_GS = 10 V, I_D = 26 A - enables <1.3 W conduction loss at 52 A continuous current (T_C = 25 °C)
I_D cont	52 A @ T_C = 25 °C - rated for high-current primary-side switching in >1 kW LLC resonant converters
E_AS	900 mJ - provides unclamped inductive switching margin without external snubbers in flyback or forward converters
C_oss,eq	520 pF @ V_DS = 0–480 V - determines output capacitance energy (E_OSS ≈ 60 µJ @ 480 V), directly impacting ZVS initiation in resonant topologies
Q_g	72.5 nC - defines gate drive power requirement (~1.45 mW per MHz at 10 V swing), critical for selecting gate driver ICs
t_rr	348 ns @ I_SD = 52 A, di/dt = 100 A/µs - limits reverse recovery losses and EMI generation during synchronous rectification transitions

Pinout & Package

TO-247 long leads package (ECOPACK® compliant) with isolated tab (Drain-connected). Standard lead-forming allows vertical mounting on heatsinks with mechanical isolation.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	High-voltage power node; electrically connected to metal tab - requires insulated mounting hardware for non-grounded heatsinks
G (Pin 1)	Gate	Low-impedance control input; Zener-protected against ±25 V transients - eliminates need for external gate clamping in most designs
S (Pin 3)	Source	Power return path and gate reference; low-inductance layout essential to minimize V_GS noise during fast switching

Key Features

Feature	Design Value
MDmesh M6 silicon process	45 mΩ typ. R_DS(on) at 600 V - achieves 22% lower specific on-resistance than MDmesh M5, reducing conduction loss in high-power SMPS
100% avalanche tested	6 A repetitive avalanche current rating - ensures reliability under short-circuit or overload events without derating
Zener-protected gate	±25 V gate-source rating with integrated protection - prevents gate oxide failure during ESD or gate drive faults
Low C_rss / C_iss ratio	C_rss = 2 pF, C_iss = 3400 pF → 0.059% feedback capacitance - suppresses Miller plateau effects and improves dV/dt immunity
Optimized body diode	t_rr = 348 ns, Q_rr = 5.6 µC @ 25 °C - reduces switching loss and ringing in quasi-resonant and LLC half-bridge configurations

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switching in 1–3 kW server PSU or telecom rectifier with variable-frequency LLC topology.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration, operating at 100–500 kHz with zero-voltage switching.

Use Value: Low C_oss,eq and fast body diode enable reliable ZVS across wide load range; 0.38 °C/W R_thJC sustains thermal performance at full load.

Use Scenario: Continuous conduction mode (CCM) boost PFC in industrial motor drives or EV chargers.

IC Role / Device Role / Timing Role: Main switching element handling 52 A peak current at 65–100 kHz switching frequency.

Use Value: 49 mΩ R_DS(on) minimizes conduction loss at high line; 100 V/ns dv/dt ruggedness withstands AC line transients.

Industrial UPS Inverter

High-Voltage DC-DC Converter

Use Scenario: Output stage of online double-conversion UPS with 400 V DC bus and 50/60 Hz output synthesis.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in H-bridge inverter leg, operating with 10–20 kHz PWM.

Use Value: 900 mJ E_AS absorbs inductive energy during fault shutdown; avalanche-tested reliability meets UL 1741 requirements.

Use Scenario: Isolated DC-DC converter for battery management systems (BMS) or photovoltaic string inverters (800 V bus).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with 200–300 kHz operation.

Use Value: 600 V V_DS rating supports 1000 V system-level surge testing; low Q_gd/Q_g ratio improves duty-cycle control fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7XKSA1	R_DS(on) = 99 mΩ @ 600 V - 102% higher on-resistance; C_oss,eq = 480 pF; Q_g = 62 nC	Higher conduction loss limits use to ≤1.5 kW; lower Q_g eases gate drive but insufficient for high-current LLC primary	Select only when thermal budget allows higher R_DS(on) and cost sensitivity outweighs efficiency targets
IXTH52N60L2	R_DS(on) = 65 mΩ @ 600 V; t_rr = 420 ns; E_AS = 720 mJ - lower avalanche energy and slower diode	Reduced ruggedness margin in unclamped inductive loads; less suitable for high-di/dt PFC or LLC with light-load ZVS	Preferable only where legacy design reuse or second-source qualification mandates Infineon footprint compatibility

Compared with IPP60R099C7XKSA1 and IXTH52N60L2, STWA67N60M6 delivers the lowest R_DS(on) and highest E_AS among 600 V superjunction MOSFETs in TO-247, making it optimal for thermally constrained, high-reliability 2–3 kW power stages requiring both efficiency and fault tolerance.

Availability

STWA67N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STWA67N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA67N60M6 supports 33 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13200 Rev 2. This rating accounts for thermal derating due to junction-to-case resistance (R_thJC = 0.38 °C/W) and ensures safe operation within the SOA boundary up to 150 °C junction temperature.

Does this MOSFET require external gate Zener protection?

No. The STWA67N60M6 integrates internal Zener protection on the gate, enabling direct connection to standard ±12 V to ±15 V gate drivers without external clamping components. Its gate-source voltage rating is ±25 V, verified by production testing per datasheet Section 1.

How does the body diode performance compare to standard silicon diodes?

The integrated body diode has t_rr = 348 ns and Q_rr = 5.6 µC at 25 °C, significantly faster than conventional FRD-based solutions in same voltage class. Its soft recovery characteristic (IRRM = 32 A) reduces EMI and voltage overshoot during commutation in bridge topologies.

Is the TO-247 long leads variant compatible with standard TO-247 footprints?

Yes - the TO-247 long leads package shares identical mounting hole spacing and tab dimensions with standard TO-247, but features extended lead length for improved creepage distance in high-voltage designs. Mechanical data in Table 8 (A = 5.00 mm, D = 21.00 mm, E = 15.80 mm) confirms full PCB footprint compatibility.

STWA67N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 49mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STWA67N60M6 FAQ

1.How can I place an order for STWA67N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA67N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA67N60M6 reliable?

The price and inventory of STWA67N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA67N60M6 is usually 5 days.

3.What payment methods are accepted for STWA67N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA67N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA67N60M6?

STWA67N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA67N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA67N60M6?

For technical support, including STWA67N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA67N60M6 requirements.

6.How does Aetrix verify that STWA67N60M6 is sourced from the original manufacturer or authorized distributors?

All STWA67N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA67N60M6 meets industry standards.

7.What is the process for return or replacement of STWA67N60M6?

All STWA67N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STWA67N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA67N60M6 part is unused and in its original packaging.

Return procedure for STWA67N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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