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STMicroelectronics STWA68N60M6

Name: STWA68N60M6
Brand: STMicroelectronics
SKU: STWA68N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA68N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA68N60M6.pdf

Description:: MOSFET N-CH 600V 63A TO247

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Product details

Overview

STWA68N60M6 from STMicroelectronics is an N-channel 600 V, 41 mΩ (max) MDmesh M6 superjunction power MOSFET in TO-247 long leads package, rated for 63 A continuous drain current at TC = 25 °C and 390 W total power dissipation, designed for high-efficiency LLC resonant and boost PFC converters.

For engineers reviewing the STWA68N60M6 datasheet, STWA68N60M6 pinout, STWA68N60M6 application, or STWA68N60M6 equivalent, key selection criteria include R_DS(on) typ. 35 mΩ, Q_g = 106 nC, C_oss eq. = 713 pF, 100% avalanche tested, and Zener-protected gate.

Technical Context

This MOSFET employs ST's MDmesh M6 technology, delivering improved R_DS(on)/area over prior generations while maintaining robust dv/dt ruggedness (100 V/ns) and low gate input resistance (1.6 Ω). Its optimized capacitance profile (C_iss = 4360 pF, C_rss = 13 pF) enables fast, low-loss switching in hard- and soft-switching topologies.

The device integrates a Zener-protected gate structure and features a fully characterized source-drain diode with trr = 308 ns (T_j = 25 °C) and Q_rr = 4.3 µC, supporting synchronous rectification and bidirectional conduction in resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in operation with 20% margin per IEC/UL safety standards
R_DS(on) max	41 mΩ - Enables <1.5 W conduction loss at 63 A, critical for >98% efficiency in high-power PFC stages
Q_g	106 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
C_oss eq.	713 pF - Defines energy stored in output capacitance (E_OSS ≈ 100 µJ at 480 V), directly impacting zero-voltage switching (ZVS) capability
E_AS	1100 mJ - Single-pulse avalanche energy rating ensures reliability under unclamped inductive switching stress
T_j max	150 °C - Supports operation in thermally constrained industrial enclosures without derating below 100 °C case temperature
R_thJC	0.32 °C/W - Enables 390 W power dissipation with ≤125 °C junction rise above 25 °C case, simplifying heatsink sizing

Pinout & Package

TO-247 long leads package with isolated tab (D), standard 3-pin configuration: Drain (Tab), Gate (Pin 1), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power terminal	Electrically connected to metal tab; requires insulated mounting and thermal interface to heatsink
Gate (Pin 1)	Control input	Zener-protected; accepts ±25 V V_GS; low 1.6 Ω intrinsic resistance reduces gate loop oscillation risk
Source (Pin 3)	Power return and reference node	Provides Kelvin connection for accurate current sensing; separates power and signal return paths

Key Features

Feature	Design Value
MDmesh M6 silicon process	Delivers 35 mΩ typ. R_DS(on) at 600 V - 22% lower on-resistance density vs. M5 generation, reducing conduction loss in compact designs
100% avalanche tested	Guarantees E_AS ≥ 1100 mJ per unit - eliminates need for external snubbers in flyback or LLC transient overload conditions
Zener-protected gate	Withstands ±25 V V_GS continuously - prevents gate oxide failure during layout parasitic coupling or driver overshoot
Low C_rss/C_iss ratio	13 pF / 4360 pF = 0.3% - minimizes Miller effect, enabling stable 100+ kHz switching with moderate gate resistance (RG = 4.7 Ω)
Optimized body diode	trr = 308 ns, Q_rr = 4.3 µC at T_j = 25 °C - reduces reverse recovery loss and EMI in bridge-leg commutation

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side switch in 1–3 kW server PSU or telecom rectifier operating at 100–300 kHz with ZVS.

IC Role / Device Role / Timing Role: High-side switching element synchronized to resonant tank frequency; conducts full load current during half-cycle.

Use Value: Low C_oss eq. (713 pF) and 100 V/ns dv/dt ruggedness ensure reliable ZVS across line/load variations without added dead-time tuning.

Use Scenario: Active switch in continuous conduction mode (CCM) boost PFC front-end for industrial motor drives.

IC Role / Device Role / Timing Role: Unidirectional power switch modulated at 65–100 kHz to shape AC input current into sinusoidal waveform.

Use Value: 35 mΩ typ. R_DS(on) limits conduction loss to <1.2 W at 63 A, enabling >99% PFC efficiency at full load.

Solar Microinverter H-Bridge

Industrial UPS Inverter Stage

Use Scenario: Half-bridge leg in 300–500 W photovoltaic microinverter converting DC to 50/60 Hz AC.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling bidirectional current during PWM-modulated grid synchronization.

Use Value: Body diode Q_rr = 4.3 µC and trr = 308 ns minimize shoot-through risk and recovery loss during polarity reversal.

Use Scenario: Output inverter switch in 5–10 kVA uninterruptible power supply with battery backup and sine-wave output.

IC Role / Device Role / Timing Role: High-reliability switching device operating in hard-switched H-bridge at 8–16 kHz with high thermal cycling demand.

Use Value: 150 °C T_j rating and 0.32 °C/W R_thJC support sustained 40 A RMS current with minimal derating in forced-air-cooled chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH60N60L2	R_DS(on) max = 45 mΩ; higher Q_g = 132 nC; no Zener gate protection	Lower dv/dt ruggedness (50 V/ns); less suitable for fast ZVS transitions	Prefer where gate drive margin is ample and cost sensitivity outweighs ZVS optimization
IPP60R041C7	R_DS(on) max = 41 mΩ same; lower C_oss eq. = 520 pF; higher V_GS(th) = 4.0 V min	Better ZVS onset voltage but slower turn-on due to higher threshold and lower transconductance	Choose when minimizing E_OSS is critical and gate drive can support higher V_GS bias

Compared with IXTH60N60L2 and IPP60R041C7, STWA68N60M6 offers superior dv/dt ruggedness and integrated gate protection-critical for field-reliable industrial PFC and LLC designs-while matching R_DS(on) performance and providing tighter C_oss control than the Infineon part.

Availability

STWA68N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial UPS inverter stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STWA68N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

STWA68N60M6 belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies including server PSUs, solar inverters, and industrial motor drives.

FAQ

What is the maximum safe operating area (SOA) for STWA68N60M6 at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited by R_DS(on) conduction and thermal constraints: maximum continuous ID is 40 A (per Table 1), and pulsed ID is 252 A for tp ≤ 100 µs. The device supports single-pulse operation up to 600 V × 40 A = 24 kW within the SOA boundary shown in Figure 1 of DS12067.

Does STWA68N60M6 require a negative gate voltage for reliable turn-off in high-noise environments?

No. The device has a gate threshold voltage V_GS(th) of 3.25–4.75 V and is fully enhanced at V_GS = 10 V. While −5 V is within the ±25 V V_GS rating, ST does not specify or recommend negative gate bias; standard 0 V to 10 V gate drive suffices for noise-immune operation given its Zener protection and low C_rss.

Can STWA68N60M6 replace STW68N60FD in an existing design?

Yes, with verification. STW68N60FD is an older MDmesh FD variant with higher R_DS(on) (45 mΩ max) and no Zener gate protection. STWA68N60M6 offers lower conduction loss and enhanced gate robustness, but layout review is required to confirm compatibility with its identical TO-247 footprint and thermal pad mounting requirements.

What is the recommended gate resistor value for 200 kHz LLC operation?

For 200 kHz LLC with ZVS, RG = 4.7 Ω is validated per datasheet test conditions (Table 6), yielding td(on) = 42 ns and tf = 8 ns. This value balances switching speed against gate ringing; values below 3.3 Ω may induce oscillation due to PCB inductance interacting with low 1.6 Ω intrinsic gate resistance.

STWA68N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 31.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4360 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STWA68N60M6 FAQ

1.How can I place an order for STWA68N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA68N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA68N60M6 reliable?

The price and inventory of STWA68N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA68N60M6 is usually 5 days.

3.What payment methods are accepted for STWA68N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA68N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA68N60M6?

STWA68N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA68N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA68N60M6?

For technical support, including STWA68N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA68N60M6 requirements.

6.How does Aetrix verify that STWA68N60M6 is sourced from the original manufacturer or authorized distributors?

All STWA68N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA68N60M6 meets industry standards.

7.What is the process for return or replacement of STWA68N60M6?

All STWA68N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STWA68N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA68N60M6 part is unused and in its original packaging.

Return procedure for STWA68N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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