STMicroelectronics STWA70N60DM2

Overview

STWA70N60DM2 from STMicroelectronics is a 600 V, 66 A N-channel high-voltage Power MOSFET in TO-247 long leads package, featuring 0.042 Ω R_DS(on), 121 nC total gate charge, and fast-recovery body diode with 150 ns trr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS and solar inverters.

For engineers reviewing the STWA70N60DM2 datasheet, STWA70N60DM2 pinout, STWA70N60DM2 application, or STWA70N60DM2 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 100% avalanche tested reliability, low Q_rr (0.75 µC), Zener-protected gate, and thermal resistance of 0.28 °C/W junction-to-case.

Technical Context

This MDmesh™ DM2-series device integrates an optimized fast-recovery body diode with ultra-low Q_rr (0.75 µC typ.) and trr (150 ns typ.), enabling reduced switching losses in hard-switched and resonant topologies. Its 600 V V_(BR)DSS, 446 W P_TOT, and 50 V/ns MOSFET dv/dt ruggedness support robust operation under transient overvoltage stress.

The MOSFET employs a planar silicon process with Zener-protected gate oxide and is fully characterized for T_j up to 150 °C, with R_DS(on) increasing only 1.8× from 25 °C to 125 °C. Gate threshold voltage remains stable across temperature (3–5 V), supporting reliable drive margin in high-temperature environments.

Key Specifications

Pinout & Package

TO-247 long leads package: three-terminal through-hole outline with isolated tab (drain-connected), standard lead spacing (e = 5.44 mm), and 21.0 mm × 15.8 mm footprint. Thermal path optimized via copper leadframe and direct die-to-tab mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH70N60P3 and IPP60R041C7, STWA70N60DM2 uniquely combines 600 V rating, fast-recovery diode, 100% avalanche testing, and 50 V/ns dv/dt ruggedness-making it the only option qualified for demanding ZVS phase-shift and solar inverter primary switches.

Availability

STWA70N60DM2 is available at Aetrix Electronics and suitable for solar DC-AC inverters, industrial SMPS, and UPS systems requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for STWA70N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh™ DM2 series targets high-efficiency, high-reliability power conversion in 600–650 V applications, emphasizing fast diode recovery, low gate charge, and ruggedness for next-generation SMPS, solar, and UPS systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA70N60DM2 supports 42 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the 0.28 °C/W R_thj-case and 150 °C maximum junction temperature, ensuring safe operation under sustained high-power conditions.

Does this MOSFET require external gate protection?

No external gate protection is required: the device integrates a Zener diode between gate and source rated for ±25 V, protecting against ESD and transient overvoltage. This eliminates the need for discrete TVS diodes in most industrial drive and power supply designs.

Can STWA70N60DM2 replace older STW70N60DM2 devices?

Yes-STWA70N60DM2 is the direct successor to STW70N60DM2, sharing identical pinout, package, and electrical specifications. The "A" suffix denotes enhanced manufacturing control and updated qualification per ST's production data release (Rev 2, July 2015), with no design changes required.

What is the safe operating area (SOA) limitation at 400 V V_DS?

At V_DS = 400 V, the SOA limits continuous current to approximately 22 A at T_case = 25 °C (per Figure 2), constrained by second breakdown. For pulsed operation (≤10 ms), peak current reaches 66 A, provided pulse width and duty cycle remain within the bounded SOA curve to avoid thermal runaway.