STMicroelectronics STWA70N65DM6

Overview

STWA70N65DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 650 V V_DS, 36 mΩ typ. R_DS(on) at V_GS = 10 V and 68 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode with Q_rr = 1.08 µC (T_J = 25 °C) and trr = 170 ns, enabling high-efficiency ZVS phase-shift converters and hard-switched bridge topologies.

For engineers reviewing the STWA70N65DM6 datasheet, STWA70N65DM6 pinout, STWA70N65DM6 application, or STWA70N65DM6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 125 nC total gate charge, 4900 pF input capacitance, Zener-protected gate, and 100% avalanche-tested reliability under unclamped inductive loads.

Technical Context

This device employs ST's MDmesh DM6 superjunction architecture optimized for high-voltage switching efficiency. Its low Q_rr/trr and reduced C_oss (280 pF) minimize switching losses and voltage overshoot during diode commutation in resonant and phase-shifted full-bridge converters.

The MOSFET delivers stable R_DS(on) across temperature (1.8× increase from −50 °C to 150 °C), supports ±25 V gate drive, and maintains 100 V/ns dv/dt capability up to V_DS = 520 V - critical for robust operation in high-noise industrial power supplies and solar inverters.

Key Specifications

Pinout & Package

Supplied in TO-247 long leads package (ECOPACK® compliant), with standard three-terminal configuration: Drain (Tab), Gate (Pin 1), Source (Pin 3). Thermal resistance R_thJC = 0.28 °C/W enables high-power dissipation with minimal heatsink interface resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW70N65DM6 and IPW65R041CFD7, STWA70N65DM6 offers superior thermal interface (0.28 °C/W R_thJC) and tighter R_DS(on) tolerance (36–40 mΩ vs 41 mΩ typical), making it optimal for thermally constrained 3–5 kW industrial power stages requiring long-term reliability.

Availability

STWA70N65DM6 is available at Aetrix Electronics and suitable for photovoltaic inverters, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability power systems.

Supply support for STWA70N65DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DM6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies operating above 100 kHz with stringent EMI and thermal constraints.

FAQ

What is the maximum recommended gate resistor value for STWA70N65DM6 in a 200 kHz phase-shifted full-bridge?

A 4.7 Ω gate resistor is validated in the datasheet for 34 A resistive load switching at 325 V, yielding td(on) = 30.4 ns and tf = 10.8 ns. At 200 kHz with ZVS, values up to 10 Ω maintain safe dv/dt control while limiting peak gate current to <2.5 A - sufficient to fully charge 125 nC within 150 ns.

Does STWA70N65DM6 require an external freewheeling diode in a synchronous buck converter?

No. Its integrated fast-recovery body diode has trr = 170 ns and Q_rr = 1.08 µC at 25 °C, enabling reliable synchronous rectification up to 250 kHz without external diode. However, for >99% efficiency targets at light load, a discrete SiC Schottky may still be used to eliminate Q_rr-related loss.

How does the 100 V/ns dv/dt rating translate to practical PCB layout requirements?

This rating requires strict separation between high-di/dt drain loops and gate traces: keep gate loop area <10 mm², use Kelvin source connection, and place gate resistor within 5 mm of the G/S pins. Layouts meeting these rules sustain 100 V/ns without false turn-on, even with 500 V/ns parasitic spikes.

Is STWA70N65DM6 suitable for use in Class D audio amplifiers?

No. While its 650 V rating exceeds typical Class D rail voltages, its 125 nC Q_g and 4900 pF C_iss result in excessive gate drive power (>2 W at 500 kHz), and its body diode trr = 170 ns causes audible distortion in ultrasonic switching bands. Dedicated audio MOSFETs with Q_g < 40 nC are preferred.