STMicroelectronics STWA75N60DM6

Overview

STWA75N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 32 mΩ typ. R_DS(on) at V_GS = 10 V, 72 A continuous drain current at T_C = 25 °C, fast-recovery body diode (t_rr = 140 ns, Q_rr = 0.7 µC), and 100% avalanche tested. It serves as a primary switching device in high-efficiency ZVS phase-shift converters and bridge topologies.

For engineers reviewing the STWA75N60DM6 datasheet, STWA75N60DM6 pinout, STWA75N60DM6 application, or STWA75N60DM6 equivalent, key selection criteria include its low gate charge (Q_g = 117 nC), high dv/dt ruggedness (100 V/ns), TO-247 long leads package thermal performance (R_thJC = 0.28 °C/W), and Zener-protected gate for robust system-level ESD immunity.

Technical Context

This MOSFET implements ST's MDmesh DM6 silicon architecture optimized for high-frequency hard-switching and zero-voltage switching (ZVS) topologies. Its design integrates ultra-low Q_rr and t_rr with reduced C_iss (4850 pF) and C_rss (3.5 pF) to minimize switching losses and improve EMI behavior in resonant converters.

The device features intrinsic Zener protection between gate and source, enabling direct drive without external clamping in noisy industrial environments. Its 100 V/ns dv/dt ruggedness and 1000 A/μs di/dt capability ensure reliable operation during fast inductive turn-off transients in full-bridge and LLC configurations.

Key Specifications

Pinout & Package

STWA75N60DM6 is housed in a TO-247 long leads package with isolated tab (drain-connected), offering enhanced creepage distance and mechanical stability for high-voltage PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW75N60DM6, STWA75N60DM6 offers extended creepage via long leads but identical electrical specs; versus IXFH75N60X3, it delivers superior diode recovery and built-in gate protection-critical for unattended industrial systems.

Availability

STWA75N60DM6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STWA75N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STWA75N60DM6 belongs to the MDmesh DM6 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in industrial and telecom power conversion systems demanding low conduction and switching losses.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA75N60DM6 supports 45 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12280 Rev 4. This derating reflects thermal limits under sustained high-temperature operation and must be validated against actual heatsink performance and ambient conditions.

Does STWA75N60DM6 require an external gate resistor for safe operation?

A gate resistor is required to control dV/dt and ringing, but ST's recommended value is 4.7 Ω (per Figure 13 test circuit). Lower values increase switching speed but risk overshoot; higher values reduce EMI but raise switching losses. The Zener-protected gate eliminates need for external TVS.

How does the body diode recovery performance compare between 25 °C and 150 °C junction temperature?

At T_J = 150 °C, t_rr increases to 260 ns and Q_rr rises to 3.1 µC (Table 7), more than quadrupling versus 25 °C values. This directly impacts commutation loss in hard-switched topologies and must be factored into thermal design and dead-time optimization.

Can STWA75N60DM6 replace STW75N60DM6 in existing PCB layouts?

No-STWA75N60DM6 uses TO-247 long leads (L = 19.92 mm min), while STW75N60DM6 uses standard TO-247 (L = 14.20 mm min). Mounting hole spacing and creepage distances differ; mechanical redesign is required to accommodate longer leads and maintain safety clearances.