STMicroelectronics STWA75N60M6

Overview

STWA75N60M6 from STMicroelectronics is a 600 V, 72 A N-channel MDmesh M6 superjunction power MOSFET in TO-247 long leads package, featuring 32 mΩ typical R_DS(on), 106 nC total gate charge, and 100 V/ns MOSFET dv/dt ruggedness. It delivers low conduction loss and fast switching for high-efficiency LLC and boost PFC converters operating at 100–500 kHz.

For engineers reviewing the STWA75N60M6 datasheet, STWA75N60M6 pinout, STWA75N60M6 application, or STWA75N60M6 equivalent, key selection criteria include avalanche energy rating (1.4 J), diode reverse recovery charge (6.4 µC @ 25 °C), thermal resistance (0.28 °C/W junction-to-case), and Zener-protected gate reliability.

Technical Context

This MOSFET employs ST's MDmesh M6 technology to achieve superior R_DS(on)/area ratio and optimized capacitance profile: C_iss = 4850 pF, C_oss = 380 pF, and C_rss = 3.5 pF at V_DS = 100 V. Its low Q_gd/Q_g ratio (45/106 nC ≈ 42%) supports clean hard-switching transitions with minimal Miller-induced oscillation.

The device integrates a robust body diode with 367 ns reverse recovery time (T_J = 25 °C) and 13.7 µC Q_rr at 150 °C, enabling reliable operation in resonant topologies where synchronous rectification is impractical. Its 100% avalanche-tested construction ensures single-pulse ruggedness up to 11 A I_AR.

Key Specifications

Pinout & Package

TO-247 long leads package (ECOPACK® compliant) with isolated tab; mechanical outline per DS12418 Rev 3 Figure 19. Tab is drain-connected and electrically isolated from mounting surface via insulating washer or pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R041P7XKSA1 and IXFH70N60X3, STWA75N60M6 offers the lowest R_DS(on) among TO-247 600 V devices with integrated gate protection and verified 100 V/ns dv/dt ruggedness-making it optimal for high-efficiency, high-reliability 3–6 kW industrial and renewable energy converters.

Availability

STWA75N60M6 is available at Aetrix Electronics and suitable for server primary-side PFC, industrial LLC resonant converters, EV onboard chargers, and renewable energy string inverters requiring stable component supply across multi-year production cycles.

Supply support for STWA75N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M6 superjunction MOSFET product line, engineered specifically for high-frequency, high-efficiency AC/DC and DC/DC conversion in 1–10 kW power systems where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA75N60M6 supports 45 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12418 Rev 3. This rating accounts for thermal derating due to junction-to-case resistance (0.28 °C/W) and ensures safe operation within the SOA limit at elevated ambient conditions typical in enclosed power enclosures.

Does this MOSFET require an external gate Zener diode?

No. The STWA75N60M6 integrates a Zener-protected gate structure rated for ±25 V V_GS, eliminating the need for external gate clamping components in standard gate drive configurations. This simplifies PCB layout and improves reliability in high-noise industrial environments.

How does its body diode performance compare to standard SJ MOSFETs?

With t_rr = 367 ns and Q_rr = 6.4 µC at T_J = 25 °C, the STWA75N60M6's body diode exhibits faster recovery and lower stored charge than legacy MDmesh devices-reducing switching loss and EMI in hard-commutated or quasi-resonant topologies where synchronous rectification is not used.

Is the TO-247 long leads variant compatible with standard TO-247 footprints?

Yes. The TO-247 long leads package maintains identical lead pitch (5.44 mm e-dimension) and outline dimensions per DS12418 Rev 3 Table 8, allowing drop-in replacement in existing TO-247 layouts. The extended leads facilitate manual soldering and improve mechanical stability in high-vibration applications.