STMicroelectronics STWA88N65M5

Overview

STWA88N65M5 from STMicroelectronics is an N-channel 650 V, 24 mΩ typ. (29 mΩ max), 84 A MDmesh M5 Power MOSFET in TO-247 long leads package, optimized for high-efficiency hard-switching and resonant topologies in multi-kW power conversion systems including PV inverters and telecom rectifiers.

For engineers reviewing the STWA88N65M5 datasheet, STWA88N65M5 pinout, STWA88N65M5 application, or STWA88N65M5 equivalent, key selection criteria include its 15 V/ns dv/dt capability, 204 nC total gate charge, 100% avalanche-tested ruggedness, and low R_thJC of 0.28 °C/W for thermal reliability in high-power density designs.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high V_DSS and robust dv/dt immunity. Its 15 V/ns peak diode recovery voltage slope enables stable operation under fast commutation in bridge-leg configurations.

The MOSFET features a fully rated source-drain diode with 544 ns reverse recovery time (T_J = 25 °C) and 14 µC Q_rr, supporting ZVS-capable topologies. Gate threshold voltage is tightly specified at 3–5 V (V_GS(th)), ensuring reliable turn-on with standard 10 V gate drivers.

Key Specifications

Pinout & Package

TO-247 long leads package (mechanical outline per DS8771 Rev 6, Table 8), featuring extended lead length for improved creepage/clearance in high-voltage PCB layouts and enhanced thermal path via tab mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW88N65M5, the STWA88N65M5 offers identical electrical performance with longer leads for higher isolation - making it mandatory for 1000 V PV systems - while the IPW65R030CFD7 trades ruggedness for slightly lower gate charge, limiting use to less demanding telecom applications.

Availability

STWA88N65M5 is available at Aetrix Electronics and suitable for server PSUs, PV inverters, telecom rectifiers, and multi-kW battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production programs.

Supply support for STWA88N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V industrial power supplies, renewable energy inverters, and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STWA88N65M5 supports 50.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS8771 Rev 6. This derating reflects thermal limits of the TO-247 long leads package and must be applied when heatsink temperature exceeds 75 °C in sustained operation.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic source-drain diode rated for 84 A continuous and 336 A pulsed current. Key parameters include V_SD = 1.5 V at I_SD = 84 A, t_rr = 544 ns, and Q_rr = 14 µC at T_J = 25 °C - all measured under standardized inductive switching conditions per Figure 16 of the datasheet.

How does the TO-247 long leads variant differ electrically from the standard TO-247 version?

There is no electrical difference: STWA88N65M5 and STW88N65M5 share identical silicon die, R_DS(on), Q_g, E_AS, and thermal resistance. The only distinction is mechanical - longer leads provide ≥8.5 mm creepage distance versus 3.0 mm in standard TO-247, meeting IEC 62109 for PV system isolation.

Is gate resistor selection critical for reliable operation, and what value is recommended?

Yes - gate resistor directly controls switching speed, E_on/E_off, and dv/dt stress. For balanced performance, ST recommends R_G = 4.7 Ω (as used in Table 5 switching time tests), yielding t_d(v) = 141 ns and t_r(v) = 16 ns. Lower values increase E_off and risk oscillation; higher values degrade efficiency above 100 kHz.