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STMicroelectronics STY100NM60N

Part No.:
STY100NM60N
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTY100NM60N.pdf
Description:
MOSFET N CH 600V 98A MAX247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:600

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Product details

Overview

STY100NM60N from STMicroelectronics is an N-channel 600 V, 98 A Power MOSFET in Max247 package, featuring 0.028 Ω typ. RDS(on), 330 nC total gate charge, and 100% avalanche tested. It employs MDmesh™ II vertical strip architecture for high-efficiency hard-switching in industrial SMPS and solar inverters.

For engineers reviewing the STY100NM60N datasheet, STY100NM60N pinout, STY100NM60N application, or STY100NM60N equivalent, key selection criteria include its 650 V VDSS rating, low Ciss/Coss ratio (9600 pF / 850 pF), 0.2 °C/W Rthj-case, and 757 mJ EAS single-pulse avalanche energy.

Technical Context

This MOSFET uses ST's second-generation MDmesh™ process with optimized cell layout and deep-trench termination to achieve ultra-low conduction and switching losses simultaneously. Its 1.3 Ω intrinsic gate resistance and 15 V/ns dv/dt immunity support robust gate drive design in high-frequency converters.

The device integrates a fast-recovery body diode with 622 ns trr at Tj = 25 °C and 820 ns at 150 °C, enabling efficient synchronous rectification and ZVS operation in resonant topologies without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports 400 V DC bus designs with 50% voltage margin for transient spikes
RDS(on) typ.0.028 Ω - enables <1.4 W conduction loss at 98 A, reducing heatsink requirements
ID cont. @ TC=25°C98 A - delivers full rated current with forced-air cooling on standard PCBs
Qg330 nC - determines gate driver power requirement and switching speed trade-off
EAS757 mJ - ensures reliable unclamped inductive switching in PFC and motor drives
Rthj-case0.2 °C/W - allows direct mounting to heatsink for thermal management in high-power modules
dv/dt immunity15 V/ns - prevents false turn-on during fast voltage transients in bridge configurations

Pinout & Package

The STY100NM60N is housed in the Max247 package - a through-hole, isolated-tab power package with 3 terminals and creepage/clearance compliant with IEC 60747-17 for 600 V applications.

Pin/TerminalCircuit RoleDesign Meaning
1 (Drain)Main current path collectorConnected directly to metal tab; electrically tied to heatsink for thermal and electrical grounding
2 (Source)Reference node for gate driveLow-inductance return path for load current; critical for stable gate control loop
3 (Gate)Control input terminalHigh-impedance MOS control node requiring <1.3 Ω series resistance to damp ringing

Key Features

FeatureDesign Value
100% avalanche testedGuarantees ruggedness under unclamped inductive switching up to 15 A repetitive IAR
Low Ciss/Coss ratio9600 pF / 850 pF enables faster switching with reduced Miller effect and lower EMI
MDmesh™ II technologyVertical trench structure achieves 0.028 Ω RDS(on) at 600 V - 30% lower than first-gen equivalents
Fast body diode622 ns reverse recovery time at 25 °C supports >100 kHz operation in LLC resonant converters

Applications

Industrial SMPSSolar Inverters

Use Scenario: 3 kW three-phase PFC front-end operating at 75 kHz with 800 V DC link.

IC Role / Device Role / Timing Role: Main switch in boost PFC stage handling 98 A peak line current.

Use Value: Low Qg and RDS(on) reduce total losses by 12 W vs. legacy 600 V MOSFETs, improving system efficiency to 98.2%.

Use Scenario: String-level DC/AC conversion in central inverters with 1000 V PV input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC topology managing 600 V blocking and 98 A conduction.

Use Value: 650 V VDSS rating and 15 V/ns dv/dt immunity prevent shoot-through during bus voltage transitions.

Motor DrivesUPS Systems

Use Scenario: 15 kW servo drive output stage with 10 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Inverter leg switch with bidirectional current flow via integrated body diode.

Use Value: 820 ns trr at 150 °C ensures clean commutation during high-temperature overload conditions.

Use Scenario: Online double-conversion UPS with 480 V AC input and 600 V DC bus.

IC Role / Device Role / Timing Role: Static bypass switch and inverter main switch in redundant power path.

Use Value: 757 mJ EAS withstands fault currents during transfer switching without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW100NM60NDSame die, D2PAK package; higher Rthj-amb (0.5 °C/W vs. 0.2 °C/W)Lower power density; unsuitable for >50 A continuous in compact heatsinksSelect when board space constraints favor surface-mount assembly over through-hole
IXFH100N60P3650 V, 0.027 Ω, but 420 nC Qg; no avalanche ratingLacks 100% avalanche test; requires external snubbers in inductive loadsSelect only in non-critical, well-clamped circuits where gate drive capability exceeds 330 nC

Compared with STW100NM60ND and IXFH100N60P3, STY100NM60N offers superior thermal performance in high-current through-hole designs and guaranteed avalanche ruggedness-critical for industrial PFC and UPS systems where reliability under fault conditions is non-negotiable.

Availability

STY100NM60N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, motor drives, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for STY100NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STY100NM60N belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in telecom rectifiers, server PSUs, and renewable energy converters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STY100NM60N supports 62 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the Max247 package and ensures safe operation within the 150 °C maximum junction temperature under sustained load.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 2–4 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended per ST's application guidance for MDmesh™ II devices.

Can the integrated body diode replace an external freewheeling diode in a buck converter?

Yes-the body diode is rated for 98 A continuous and 392 A pulsed, with 622 ns reverse recovery time at 25 °C. It is suitable for synchronous rectification in medium-frequency buck converters, though external Schottky diodes may be preferred above 200 kHz due to lower Qrr.

Is the Max247 package RoHS-compliant and halogen-free?

Yes. Per ST's ECOPACK® documentation, the Max247 package used for STY100NM60N meets RoHS Directive 2011/65/EU and is halogen-free, with lead-free terminations and compliant molding compounds verified per JEDEC J-STD-020 and J-STD-033 standards.

STY100NM60N Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
29mOhm @ 49A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
330 nC @ 10 V
Vgs (Max):
25V
Input Capacitance (Ciss) (Max) @ Vds:
9600 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
625W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
MAX247™

STY100NM60N FAQ

1.How can I place an order for STY100NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STY100NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STY100NM60N reliable?

The price and inventory of STY100NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STY100NM60N is usually 5 days.

3.What payment methods are accepted for STY100NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STY100NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STY100NM60N?

STY100NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STY100NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STY100NM60N?

For technical support, including STY100NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STY100NM60N requirements.

6.How does Aetrix verify that STY100NM60N is sourced from the original manufacturer or authorized distributors?

All STY100NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STY100NM60N meets industry standards.

7.What is the process for return or replacement of STY100NM60N?

All STY100NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STY100NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STY100NM60N part is unused and in its original packaging.

Return procedure for STY100NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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