STMicroelectronics STY100NS20FD

Overview

STY100NS20FD from STMicroelectronics is an N-channel enhancement-mode power MOSFET in Max247 package, rated for 200 V drain-source voltage, 0.022 Ω typical R_DS(on) at V_GS = 10 V and I_D = 50 A, and 100 A continuous drain current at T_C = 25 °C. It features MESH OVERLAY™ process technology, 100% avalanche tested construction, and fast body-drain diode with 225 ns reverse recovery time - deployed in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STY100NS20FD datasheet, STY100NS20FD pinout, STY100NS20FD application, or STY100NS20FD equivalent, key selection criteria include its 25 V/ns dv/dt capability, 360 nC total gate charge, 750 mJ single-pulse avalanche energy, low 0.277 °C/W junction-to-case thermal resistance, and compatibility with high-current, high-voltage switching topologies requiring robust unclamped inductive load handling.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ high-voltage process and STrip layout architecture to achieve ultra-low R_DS(on) per die area and exceptional ruggedness. Its edge termination structure enables stable operation under extreme dv/dt stress up to 25 V/ns while maintaining tight parameter distribution across temperature.

The device integrates a fast intrinsic body diode (trr = 225 ns, Qrr = 1.35 µC at T_j = 150 °C) optimized for synchronous rectification and freewheeling in hard-switched converters. Gate drive requirements are defined by 35 nC Qgs and 135 nC Qgd, supporting efficient control with standard gate drivers at 10 V bias.

Key Specifications

Pinout & Package

STY100NS20FD uses the Max247 package - a through-hole, isolated-tab TO-247 variant with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the drain and thermally coupled to the die for low-impedance heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 200 V power MOSFET applications.

Compared with IXFH100N20X3 and IRFP4668PBF, STY100NS20FD offers the highest guaranteed avalanche robustness (750 mJ) and superior dv/dt immunity (25 V/ns), making it optimal for industrial motor drives and solar inverters where reliability under fault conditions is critical.

Availability

STY100NS20FD is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and high-power DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for STY100NS20FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STY100NS20FD belongs to the STripFET™ V family, engineered specifically for high-efficiency, high-reliability power conversion systems operating at 100–200 V bus voltages with demanding thermal and ruggedness requirements.

FAQ

Is STY100NS20FD still in active production?

No - STY100NS20FD is marked as Obsolete Product(s) in the official ST datasheet (Rev 3, May 2006). It remains available through authorized distributors and Aetrix Electronics' legacy component program with full traceability and extended lifecycle support for existing designs.

What is the maximum recommended gate resistor value for reliable switching?

Based on the 360 nC total gate charge and 10 V drive, a 4.7 Ω gate resistor is validated in the datasheet for 100 A switching with controlled dv/dt. Values above 10 Ω increase switching losses significantly; below 2.2 Ω risk excessive peak gate current (>1.5 A) and ringing without proper PCB layout.

Can STY100NS20FD be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) enables stable current sharing. Parallel operation requires matched gate drive paths, Kelvin source connections, and symmetrical thermal mounting to ensure <5% current imbalance at full load across up to four devices.

Does the Max247 package require thermal compound between tab and heatsink?

Yes - ST specifies a maximum junction-to-case thermal resistance of 0.277 °C/W, achievable only with uniform thermal interface material (e.g., silicone grease or phase-change pad) applied to the entire tab surface. Dry mounting increases R_thj-case by ≥40%, risking thermal runaway above 60% load.