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STMicroelectronics STY105NM50N
- Part No.:
- STY105NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STY105NM50N.pdf
- Description:
- MOSFET N-CH 500V 110A MAX247
- Quantity:
- Payment:
- Shipping:
Inventory:8,569
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Product details
Overview
STY105NM50N from STMicroelectronics is an N-channel 500 V, 110 A, 0.019 Ω typ. RDS(on) Power MOSFET in Max247 package, built on MDmesh™ II vertical strip technology. It delivers ultra-low conduction loss and gate charge for high-efficiency hard-switched and resonant converters in industrial SMPS, solar inverters, and UPS systems.
For engineers reviewing the STY105NM50N datasheet, STY105NM50N pinout, STY105NM50N application, or STY105NM50N equivalent, key selection criteria include its 500 V V(BR)DSS, 326 nC total gate charge, 15 V/ns dv/dt capability, avalanche ruggedness (809 mJ EAS), and thermal resistance of 0.2 °C/W junction-to-case.
Technical Context
This device uses ST's second-generation MDmesh™ II process with optimized strip layout and deep-trench vertical structure to simultaneously minimize RDS(on) and Qg. Its low Ciss (9600 pF) and Crss (22 pF) enable fast switching with reduced Miller effect, while the integrated body diode supports synchronous rectification and inductive load handling.
The MOSFET is rated for continuous drain current up to 110 A at TC = 25 °C and 88 A at TC = 100 °C, with 100% unclamped inductive avalanche testing per JEDEC JESD24-1. Its safe operating area (SOA) supports single-pulse IDM = 440 A and robust operation under hard commutation conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 500 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin. |
| RDS(on) typ. | 0.019 Ω @ VGS = 10 V, ID = 52 A - Enables <1.1 W conduction loss at 50 A, critical for >98% efficiency designs. |
| Qg | 326 nC - Low gate drive power requirement; compatible with standard 1–2 A gate drivers at 100–300 kHz. |
| EAS | 809 mJ - Confirmed single-pulse avalanche energy at Tj = 25 °C; supports reliable operation during transient overvoltage events. |
| Rthj-case | 0.2 °C/W - Allows 625 W dissipation at ΔT = 125 °C; enables compact heatsink design without forced air. |
| dv/dt rating | 15 V/ns - Resists false turn-on in high-noise bridge configurations with fast voltage transients. |
| tr/tf | 88 ns / 70 ns - Supports switching frequencies up to 500 kHz with minimal overlap loss in ZVS/ZCS topologies. |
Pinout & Package
STY105NM50N is housed in the Max247 package - a through-hole, isolated-tab power package with 3 terminals and industry-standard mechanical dimensions (D = 20.0 mm, E = 15.6 mm, L = 14.7 mm). The tab is electrically connected to the drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path | Electrically tied to metal tab; requires insulated mounting or direct heatsink connection with isolation washer. |
| Source | Reference node for gate drive and current sensing | Low-inductance source return path; critical for stable gate control and accurate shunt-based current monitoring. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <1.3 Ω intrinsic gate resistance; sensitive to ringing-needs local RC snubber or ferrite bead. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical strip architecture | Reduces specific RDS(on) by 35% vs first-gen MDmesh, enabling higher current density in same footprint. |
| 100% unclamped inductive avalanche tested | Guarantees robustness against inductive kickback without external clamping, simplifying flyback/LLC transformer design. |
| Low Ciss/Crss ratio (9600 pF / 22 pF) | Minimizes Miller plateau duration and improves controllability during turn-off, reducing risk of shoot-through. |
| Low Qgd/Qgs ratio (180 nC / 40 nC) | Enables faster, more predictable turn-off with reduced dependence on gate resistor value and layout parasitics. |
| ECOPACK®-compliant Max247 package | Lead-free, RoHS-compliant construction with tin-plated leads and halogen-free molding compound. |
Applications
| Industrial SMPS | Solar Inverters |
|---|---|
Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers and server PSUs operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched main switch handling full DC-link voltage and load current. Use Value: 0.019 Ω RDS(on) cuts conduction loss by ~40% vs comparable 600 V MOSFETs, directly improving full-load efficiency by 0.8–1.2%. |
Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V PV input to 1200 V DC bus. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated boost switch managing high dI/dt and reverse recovery stress from freewheeling diode. Use Value: 15 V/ns dv/dt rating and 552 ns trr support clean turn-on without spurious oscillation, reducing EMI filter size by 25%. |
| UPS Systems | Induction Heating |
Use Scenario: Inverter leg switch in online double-conversion UPS delivering clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: Bidirectional switching element in H-bridge topology handling both line-interactive and battery-backup modes. Use Value: 809 mJ EAS ensures reliable operation during grid fault transitions without external snubbers or derating. |
Use Scenario: Half-bridge switch in 10–20 kW resonant induction heaters operating at 20–100 kHz. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) active device subjected to high peak currents and repetitive avalanche stress. Use Value: 440 A pulsed drain current rating and low Qg allow stable ZVS across wide load ranges, increasing power density by 18%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage, high-current Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW105NM50ND | Same die, TO-247-4L package with Kelvin source; 0.018 Ω RDS(on); 315 nC Qg | Supports precise gate drive and current sensing in high-accuracy digital control loops | Select when using SiC/GaN-compatible controllers requiring separate source return for gate driver feedback. |
| IPP60R099C7 | 650 V, 0.099 Ω, 105 A, TO-220FP; CoolMOS™ C7; lower Qg (125 nC) but higher RDS(on) | Better suited for medium-power (<2 kW), cost-sensitive consumer PSUs with lower voltage stress | Choose only if system VDC ≤ 400 V and thermal budget allows higher conduction loss. |
Compared with STW105NM50ND, STY105NM50N trades Kelvin-source precision for lower cost and simpler PCB layout; versus IPP60R099C7, it delivers 5× lower RDS(on) at 500 V, making it essential for high-power industrial systems where conduction loss dominates efficiency.
Availability
STY105NM50N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.
Supply support for STY105NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STY105NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial infrastructure equipment.
FAQ
What is the maximum recommended gate-source voltage for STY105NM50N?
The absolute maximum VGS is ±25 V, but ST recommends limiting continuous gate drive to ±20 V to ensure long-term reliability of the gate oxide. Transient spikes beyond ±20 V must be clamped using Zener diodes or active gate clamp circuits, especially in high-dV/dt environments like half-bridge configurations.
Can STY105NM50N be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (confirmed in Figure 11) enables inherent current sharing. For stable parallel operation, match gate drive loop inductance and use individual gate resistors (≥5 Ω) to dampen oscillation; ST specifies <±5% RDS(on) unit-to-unit variation at 25 °C.
Is the body diode suitable for synchronous rectification?
No-the body diode has relatively high VSD (1.6 V) and slow trr (552 ns), making it unsuitable for high-frequency synchronous rectification. External Schottky or GaN FETs are recommended for secondary-side rectification; this device is intended for primary-side switching only.
Does STY105NM50N require derating above 100 °C case temperature?
Yes-ID is derated linearly from 110 A at TC = 25 °C to 88 A at TC = 100 °C, per Table 2. At TC = 125 °C, max continuous ID drops to ~72 A. Thermal design must maintain TC ≤ 100 °C for full rated current, considering Rthj-case = 0.2 °C/W and ambient constraints.
STY105NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 326 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9600 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 625W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- MAX247™
STY105NM50N FAQ
1.How can I place an order for STY105NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STY105NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STY105NM50N reliable?
The price and inventory of STY105NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STY105NM50N is usually 5 days.
3.What payment methods are accepted for STY105NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STY105NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STY105NM50N?
STY105NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STY105NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STY105NM50N?
For technical support, including STY105NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STY105NM50N requirements.
6.How does Aetrix verify that STY105NM50N is sourced from the original manufacturer or authorized distributors?
All STY105NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STY105NM50N meets industry standards.
7.What is the process for return or replacement of STY105NM50N?
All STY105NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STY105NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STY105NM50N part is unused and in its original packaging.
Return procedure for STY105NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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