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STMicroelectronics STY112N65M5

Part No.:
STY112N65M5
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTY112N65M5.pdf
Description:
MOSFET N-CH 650V 96A MAX247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:543

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Product details

Overview

STY112N65M5 from STMicroelectronics is an N-channel 650 V, 96 A Power MOSFET in Max247 package, featuring 22 mΩ max RDS(on), 350 nC total gate charge, and 100% avalanche-tested ruggedness. It leverages MDmesh M5 vertical process technology for high-efficiency switching in industrial SMPS and motor drives.

For engineers reviewing the STY112N65M5 datasheet, STY112N65M5 pinout, STY112N65M5 application, or STY112N65M5 equivalent, key selection criteria include its 650 V V(BR)DSS, low 19 mΩ typ. RDS(on), 15 V/ns dv/dt capability, and 2400 mJ EAS - critical for hard-switched PFC and high-voltage DC-DC converters.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon process, combining deep-trench vertical charge compensation with optimized PowerMESH layout to achieve ultra-low conduction loss while maintaining robust fast-recovery body diode performance (trr = 570 ns at 100 A/µs). Its 0.2 °C/W RthJC enables high-power operation with minimal thermal derating.

The device supports high-speed switching with 267 ns voltage delay time (td(v)) and 118 nC Qgd, enabling efficient operation in 100–300 kHz resonant and hard-switched topologies. Gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers while avoiding spurious turn-on under noise.

Key Specifications

Parameter Value and Actual Design Meaning
V(BR)DSS 650 V - Withstands full 400 V DC bus with 1.6× safety margin in telecom/server PSUs
RDS(on) max 22 mΩ at VGS = 10 V, ID = 48 A - Enables <1.1 W conduction loss at 96 A continuous current
Qg 350 nC - Dictates gate driver power requirement; compatible with 1–2 A peak drivers
EAS 2400 mJ - Supports unclamped inductive switching without external snubbers in UPS/motor control
trr 570 ns - Limits reverse recovery loss in synchronous rectification and bridge configurations
RthJC 0.2 °C/W - Allows 625 W dissipation with ≤125 °C junction rise above case, enabling compact heatsink design

Pinout & Package

STY112N65M5 uses the Max247 package - a through-hole, isolated-tab TO-247 variant with enhanced thermal and creepage performance. The tab is electrically connected to the drain (D), supporting direct mounting to heatsinks with electrical isolation.

Pin/Terminal Circuit Role Design Meaning
D (Tab) Drain Main high-side power path; thermally coupled to heatsink; requires insulating washer if heatsink is grounded
G (Pin 1) Gate Control input; 1.26 Ω intrinsic gate resistance limits ringing; sensitive to ESD (±25 V rating)
S (Pin 3) Source Power return reference; connects to low-side switch node or ground; carries full load current (96 A)

Key Features

Feature Design Value
MDmesh M5 process Enables 650 V rating with 19 mΩ typ. RDS(on) - 25% lower on-resistance than prior-generation 650 V MOSFETs
100% avalanche tested Guarantees single-pulse ruggedness up to 2400 mJ - eliminates need for overvoltage clamping in flyback/LLC designs
Low Qgd/Qgs ratio 118 nC / 97 nC = 1.22 - improves Miller immunity and reduces switching instability in high-dV/dt environments
Fast body diode trr 570 ns at 96 A, 100 A/µs - minimizes commutation loss in half-bridge and synchronous rectifier applications

Applications

Industrial SMPS Telecom Rectifiers

Use Scenario: 3 kW active clamp forward converter in 48 V telecom shelf power supply.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200 kHz with 520 V VDD.

Use Value: 22 mΩ RDS(on) reduces conduction loss by 1.8 W vs. legacy 650 V MOSFETs, improving efficiency from 94.2% to 94.7% at full load.

Use Scenario: High-density 12 V/200 A output stage using interleaved phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with zero-voltage switching (ZVS) assist.

Use Value: 570 ns trr and 1.5 V VSD minimize reverse recovery loss and forward drop, reducing rectifier losses by 35% versus Schottky alternatives.

UPS Inverters Motor Drives

Use Scenario: 5 kVA online double-conversion UPS output inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid bridge driving LC filter.

Use Value: 384 A pulsed IDM rating supports 200% overload for 10 s; 15 V/ns dv/dt tolerance prevents false triggering during fast IGBT turn-off events.

Use Scenario: 7.5 kW HVAC compressor inverter with field-oriented control (FOC).

IC Role / Device Role / Timing Role: High-voltage leg switch in 650 V DC bus configuration.

Use Value: 0.2 °C/W RthJC allows direct heatsink mounting without thermal interface pads, reducing thermal resistance by 0.4 °C/W vs. standard TO-247.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPP65R190C7 650 V, 190 mΩ, TO-220FP package; higher RDS(on), lower ID (30 A), no avalanche rating Limited to <1 kW applications; unsuitable for 96 A continuous or unclamped inductive loads Select only for cost-sensitive, low-power designs where thermal margin exceeds 40 °C
IXFH50N65X2 650 V, 50 mΩ, TO-247 package; 2× lower Qg (175 nC), but 50% higher RDS(on) and no EAS spec Better for high-frequency ZVS/ZCS topologies; not rated for repetitive avalanche stress Prefer when switching frequency >500 kHz and avalanche robustness is not required

Compared with IPP65R190C7 and IXFH50N65X2, STY112N65M5 delivers superior power density (96 A/625 W) and guaranteed ruggedness (2400 mJ EAS), making it uniquely suited for mission-critical 3–5 kW industrial power stages where reliability and thermal headroom are non-negotiable.

Availability

STY112N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, telecom rectifiers, UPS inverters, and motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STY112N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies and motor control systems operating at 600–650 V bus voltages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STY112N65M5 supports 61 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6035 Rev 4. This derating reflects thermal limitations of the Max247 package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does this MOSFET have an integrated body diode, and what are its key recovery characteristics?

Yes - it features a monolithic source-drain body diode with 570 ns reverse recovery time (trr) and 17 µC reverse recovery charge (Qrr) at TJ = 25 °C. These values increase to 695 ns and 26 µC at 150 °C, confirming stable performance across full operating temperature range.

Can STY112N65M5 be used in parallel configurations, and what layout considerations apply?

Yes - its positive temperature coefficient of RDS(on) (1.3× increase from −50 °C to 150 °C per Figure 10) enables stable current sharing. Layout must ensure matched gate loop inductance (<5 nH difference) and symmetrical source routing to avoid dynamic imbalance during switching transitions.

Is the Max247 package RoHS-compliant and halogen-free?

Yes - ST certifies the Max247 package as ECOPACK2 compliant, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21:2011 for halogen-free materials (Cl < 900 ppm, Br < 900 ppm, total halogens < 1500 ppm), as documented in ST's ECOPACK specifications portal.

STY112N65M5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ V
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
22mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
350 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
16870 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
625W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
MAX247™

STY112N65M5 FAQ

1.How can I place an order for STY112N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STY112N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STY112N65M5 reliable?

The price and inventory of STY112N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STY112N65M5 is usually 5 days.

3.What payment methods are accepted for STY112N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STY112N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STY112N65M5?

STY112N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STY112N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STY112N65M5?

For technical support, including STY112N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STY112N65M5 requirements.

6.How does Aetrix verify that STY112N65M5 is sourced from the original manufacturer or authorized distributors?

All STY112N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STY112N65M5 meets industry standards.

7.What is the process for return or replacement of STY112N65M5?

All STY112N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STY112N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STY112N65M5 part is unused and in its original packaging.

Return procedure for STY112N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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