Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STY30NK90Z

Part No.:
STY30NK90Z
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTY30NK90Z.pdf
Description:
MOSFET N-CH 900V 26A MAX247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,991

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STY30NK90Z from STMicroelectronics is an N-channel SuperMESH™ power MOSFET rated for 900 V drain-source voltage, 0.21 Ω typical RDS(on) at VGS = 10 V and ID = 14 A, 26 A continuous drain current at TC = 25°C, and housed in the Max247 package. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STY30NK90Z datasheet, STY30NK90Z pinout, STY30NK90Z application, or STY30NK90Z equivalent, key selection criteria include its 900 V VDS, Zener-protected gate, 4.5 V/ns dv/dt capability, 100% avalanche tested rating, and low Ciss (12 nF) for hard-switching efficiency.

Technical Context

This MOSFET employs ST's SuperMESH™ strip-based layout to minimize RDS(on) while preserving robust dv/dt immunity (4.5 V/ns) and avalanche ruggedness (EAS = 500 mJ). Its integrated back-to-back gate-source Zener diodes provide ±30 V gate protection without external components.

The device features low intrinsic capacitances (Ciss = 12,000 pF, Coss = 852 pF), fast switching (td(on) = 67 ns, tf = 72 ns), and gate charge optimized for high-frequency operation (Qg = 350 nC at VDD = 720 V).

Key Specifications

ParameterValue and Actual Design Meaning
VDS900 V - supports primary-side switching in universal-input 85–265 VAC offline converters
RDS(on)0.21 Ω (typ) - enables low conduction loss at 26 A DC, critical for >300 W PFC designs
ID (cont)26 A @ TC = 25°C - defines thermal design margin for heatsink sizing in forced-air cooled systems
EAS500 mJ - ensures single-pulse unclamped inductive switching survivability in relay/snubberless circuits
dv/dt4.5 V/ns - sustains reliable operation under fast transient noise in high-noise industrial environments
Ciss12,000 pF - impacts gate drive power and switching speed; requires ≥2 A peak gate driver for <100 ns transitions

Pinout & Package

STY30NK90Z is packaged in the Max247 (TO-247 variant with 3-pin vertical leadframe), a through-hole power package with isolated tab for direct heatsink mounting and creepage/clearance compliant with IEC 60950.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main high-voltage current pathElectrically connected to metal tab - must be insulated from chassis unless referenced to high-side ground
SourceReference node for gate control & current returnLow-inductance connection point for gate driver return and sense resistor placement
GateControl terminal for channel modulationProtected by integrated ±30 V Zener; requires <100 Ω series resistance to limit Qg-related ringing

Key Features

FeatureDesign Value
Zener-protected gateIntegrated back-to-back 30 V gate-source Zeners eliminate need for external TVS, reducing BOM count and PCB area
100% avalanche testedEvery unit validated for repetitive and non-repetitive avalanche energy (IAR = 26 A, EAS = 500 mJ), enabling robust overvoltage handling
SuperMESH™ layoutOptimized strip geometry achieves 0.21 Ω RDS(on) at 900 V while maintaining >4 V/ns dv/dt immunity
Low Coss & CrssCoss = 852 pF, Crss = 166 pF - minimizes Miller effect, easing gate drive design in high-frequency flyback/PFC

Applications

Industrial Motor DrivesServer PSU Primary Switch

Use Scenario: High-voltage half-bridge in 3-phase inverter drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switching element handling 600–800 V DC bus with 20–25 A RMS load current.

Use Value: Avalanche ruggedness and 4.5 V/ns dv/dt prevent false turn-on during bus transients caused by IGBT commutation.

Use Scenario: Main switch in 1 kW+ active clamp forward or LLC resonant converter in datacenter PSUs.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 100–300 kHz with 700–900 V blocking requirement.

Use Value: Low Ciss and optimized Qg/Qgd ratio reduce switching losses and improve ZVS initiation margin.

Off-line LED DriverInduction Heating Half-Bridge

Use Scenario: Flyback controller primary switch in high-bay LED drivers with universal AC input.

IC Role / Device Role / Timing Role: 900 V-rated switch managing 15–20 A peak currents during startup and overload conditions.

Use Value: Integrated gate Zener prevents gate oxide failure during line surges and lightning-induced transients.

Use Scenario: High-frequency half-bridge in 20–50 kHz induction cooktops using resonant tank topologies.

IC Role / Device Role / Timing Role: Fast-switching power stage delivering 2–3 kW into parallel-resonant LC load.

Use Value: Low RDS(on) (0.21 Ω) and high ID (26 A) enable efficient conduction at high duty cycles without thermal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW30NK90ZSame die, TO-247-3L package (non-isolated tab); RDS(on) identical, but no built-in gate ZenerRequires external gate protection; preferred where tab grounding simplifies thermal pathSelect when board layout allows direct tab grounding and external Zener is acceptable
IPP60R099CP650 V CoolMOS™ P7, RDS(on) = 0.099 Ω, lower Qg (120 nC), but lower VDSNot suitable for 900 V bus; limited to 400 V DC-link topologies like boost PFCChoose only for 650 V-class designs prioritizing switching loss over voltage headroom

Compared with STW30NK90Z, STY30NK90Z offers integrated gate protection and isolated tab for safer high-voltage isolation; versus IPP60R099CP, it trades higher RDS(on) and Qg for essential 900 V rating and avalanche hardness in mains-connected systems.

Availability

STY30NK90Z is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, off-line LED drivers, and induction heating systems requiring stable component supply and long-term lifecycle support.

Supply support for STY30NK90Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The SuperMESH™ MOSFET product line targets high-voltage, high-reliability switching applications-especially offline power conversion where avalanche ruggedness, dv/dt immunity, and gate protection are critical.

FAQ

Is STY30NK90Z still in active production?

No-STY30NK90Z is marked as Obsolete Product(s) in ST's official documentation (Rev 4, Oct 2006). While not actively manufactured, Aetrix Electronics maintains legacy inventory and supports design continuity via controlled allocation and cross-reference guidance for drop-in replacements.

What is the maximum safe operating temperature for the junction?

The maximum operating junction temperature (TJ) is 150°C, with storage temperature ranging from –65°C to +150°C. Thermal design must respect Rthj-case = 0.277°C/W max to avoid exceeding this limit under 26 A continuous conduction at TC = 25°C.

Can STY30NK90Z replace STW30NK90Z in existing designs?

Yes-with caveats: STY30NK90Z uses an electrically isolated tab (Max247), whereas STW30NK90Z has a conductive tab (TO-247-3L). Layout must verify creepage/clearance compliance and confirm gate protection is not duplicated externally.

Does the built-in Zener protect against both positive and negative gate transients?

Yes-the device integrates back-to-back Zener diodes between gate and source, providing symmetrical ±30 V clamping (BVGSO = 30 V min) for bidirectional transient suppression without polarity sensitivity.

STY30NK90Z Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
260mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
490 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
12000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
450W (Tc)
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
MAX247™

STY30NK90Z FAQ

1.How can I place an order for STY30NK90Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STY30NK90Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STY30NK90Z reliable?

The price and inventory of STY30NK90Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STY30NK90Z is usually 5 days.

3.What payment methods are accepted for STY30NK90Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STY30NK90Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STY30NK90Z?

STY30NK90Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STY30NK90Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STY30NK90Z?

For technical support, including STY30NK90Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STY30NK90Z requirements.

6.How does Aetrix verify that STY30NK90Z is sourced from the original manufacturer or authorized distributors?

All STY30NK90Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STY30NK90Z meets industry standards.

7.What is the process for return or replacement of STY30NK90Z?

All STY30NK90Z units undergo pre-shipment inspection (PSI). If there is an issue with STY30NK90Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STY30NK90Z part is unused and in its original packaging.

Return procedure for STY30NK90Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STY30NK90Z Tags

  • STY30NK90Z
  • STY30NK90Z PDF
  • STY30NK90Z Datasheet
  • STY30NK90Z Specifications
  • STY30NK90Z Images
  • STMicroelectronics
  • STMicroelectronics STY30NK90Z
  • Buy STY30NK90Z
  • STY30NK90Z Price
  • STY30NK90Z Distributor
  • STY30NK90Z Supplier
  • STY30NK90Z Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER