STMicroelectronics STY60NK30Z

Overview

STY60NK30Z from STMicroelectronics is an N-channel 300 V, 60 A SuperMESH™ power MOSFET in Max247 package with R_DS(on) = 0.033 Ω (typ), 100% avalanche tested, and integrated gate-source Zener protection. It serves as a high-current primary-side switching device in offline SMPS and PFC stages, delivering high efficiency at 60 A continuous drain current and 450 W power dissipation.

For engineers reviewing the STY60NK30Z datasheet, STY60NK30Z pinout, STY60NK30Z application, or STY60NK30Z equivalent, key selection criteria include its 300 V V_DSS, 0.033 Ω R_DS(on), 220 nC total gate charge, 4.5 V/ns dv/dt capability, and built-in ±30 V gate-source Zener clamping-critical for robustness in high-voltage flyback and boost converters.

Technical Context

This MOSFET employs ST's optimized strip-based PowerMESH™ layout to achieve ultra-low R_DS(on) while maintaining exceptional dv/dt immunity (4.5 V/ns) and repeatable manufacturing. Its Zener-protected gate structure eliminates need for external gate clamps in transient-prone environments.

The device features low intrinsic capacitances (C_iss = 7200 pF, C_oss = 1070 pF, C_rss = 250 pF) and fast switching (t_d(on) = 50 ns, t_f = 60 ns), enabling high-frequency operation in 65–100 kHz offline converters without sacrificing SOA margin.

Key Specifications

Pinout & Package

STY60NK30Z uses the Max247 (TO-247AC variant) 3-pin through-hole package: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless referenced to high-side potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW60NK30Z, STY60NK30Z offers identical electrical specs in a shorter-lead Max247 package for tighter board layouts; versus IPP60R040CFD7, it trades higher voltage rating for guaranteed avalanche ruggedness and Zener gate protection-critical in cost-sensitive, high-reliability offline SMPS.

Availability

STY60NK30Z is available at Aetrix Electronics and suitable for plasma TV power supplies, universal-input AC/DC adapters, and industrial off-line SMPS requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STY60NK30Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The SuperMESH™ MOSFET product line targets high-efficiency, high-reliability switching in 300–650 V offline power conversion, emphasizing ruggedness, low conduction loss, and manufacturability for mass-market power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STY60NK30Z supports 37.5 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Max247 package and ensures safe operation within its 0.28 °C/W junction-to-case thermal resistance.

Does the integrated gate-source Zener diode require external biasing?

No external biasing is required. The back-to-back Zener diodes are monolithically integrated between gate and source, automatically clamping transient voltages above +30 V or below –30 V without auxiliary components or power supply connections.

Can STY60NK30Z replace STW60NK30Z in existing designs?

Yes-STY60NK30Z is a direct drop-in replacement for STW60NK30Z in most cases, sharing identical die characteristics and electrical specs. Mechanical compatibility depends on PCB pad layout: Max247 has shorter leads than TO-247, so verify solder joint clearance and mounting height.

What is the typical reverse recovery time of the body diode?

The body diode exhibits t_rr = 475 ns (typ) at I_SD = 60 A, di/dt = 100 A/µs, V_R = 100 V, and T_j = 150°C. This value is measured under standardized inductive switching conditions and supports use in quasi-resonant and ZVS topologies with appropriate dead-time control.