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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STY80NM60N

Name: STY80NM60N
Brand: STMicroelectronics
SKU: STY80NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STY80NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STY80NM60N.pdf

Description:: MOSFET N-CH 600V 74A MAX247

Quantity:: RFQ Add To RFQ list

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Inventory:4,046

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Product details

Overview

STY80NM60N from STMicroelectronics is an N-channel 600 V, 74 A, 0.030 Ω R_DS(on) MDmesh™ II Power MOSFET in Max247 package, optimized for high-efficiency hard-switching and resonant converters. It delivers industry-leading conduction loss, low gate charge (360 nC), and 100% avalanche-tested ruggedness for primary-side SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STY80NM60N datasheet, STY80NM60N pinout, STY80NM60N application, or STY80NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.030 Ω R_DS(on) at V_GS = 10 V, 360 nC total gate charge, 150 °C max junction temperature, and Max247 thermal resistance of 0.28 °C/W.

Technical Context

This device uses ST's second-generation MDmesh™ vertical strip layout to minimize both specific on-resistance and gate-drain charge (Q_gd = 160 nC). Its low C_iss (10.1 nF) and C_oss (455 pF) enable fast switching with reduced EMI generation in high-frequency topologies.

The integrated source-drain diode features 74 A continuous current capability, 1.5 V forward voltage at 74 A, and controlled reverse recovery (t_rr = 700 ns @ T_j = 25 °C), supporting synchronous rectification and ZVS designs without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V AC input systems with ≥20% margin for surge and ringing
R_DS(on) max	0.035 Ω - ensures <1.9 W conduction loss at 74 A, enabling compact heatsink design
Q_g	360 nC - determines gate driver power requirement and switching speed trade-off
t_r/t_f	65/200 ns - enables operation up to 500 kHz in hard-switched converters
R_thj-case	0.28 °C/W - allows 447 W dissipation at ΔT = 125 °C, critical for high-power density layouts
E_AS	2 J - provides single-pulse unclamped inductive energy handling without failure
V_SD	1.5 V @ 74 A - defines forward conduction loss during body-diode conduction phase

Pinout & Package

The STY80NM60N is housed in the Max247 package - a through-hole, isolated-tab TO-247 variant with enhanced thermal performance and creepage/clearance for 600 V applications. The tab is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically tied to metal tab; requires insulated mounting for floating-drain configurations
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing and shunt-based sensing
Gate	Control electrode for channel modulation	High-impedance input requiring <2.0 Ω series resistance to damp oscillation and limit dv/dt-induced turn-on

Key Features

Feature	Design Value
MDmesh™ II vertical structure	Reduces R_DS(on) × Q_g figure-of-merit by 35% vs first-gen MDmesh, improving efficiency in 100–300 kHz converters
100% avalanche tested	Guarantees robustness under transient overvoltage events without derating, eliminating need for external snubbers in many PFC designs
Low C_iss/C_oss ratio	C_iss/C_oss ≈ 22:1 enables stable zero-voltage switching across wide load ranges in LLC resonant converters
Enhanced diode softness (t_rr = 700–840 ns)	Minimizes voltage overshoot and EMI during commutation, reducing need for RC snubbers on secondary-side rectifiers

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 3 kW server power supply operating at 100–200 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch controlling energy transfer from AC line to bulk capacitor; operates in hard-switched mode with precise dead-time control.

Use Value: 0.030 Ω R_DS(on) reduces conduction loss by 22% vs comparable 650 V MOSFETs, enabling >96% efficiency at full load.

Use Scenario: Three-phase 11 kW industrial motor drive with boost-type active front-end rectifier.

IC Role / Device Role / Timing Role: High-side boost switch handling 74 A peak current at 20 kHz switching frequency.

Use Value: 447 W power dissipation rating and 0.28 °C/W R_thj-case allow direct heatsink mounting without thermal interface pads, simplifying mechanical design.

Solar Inverter DC-DC Stage

EV Onboard Charger HV Side

Use Scenario: 5 kW string inverter DC-DC stage converting 600 V PV input to 400 V battery bus using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: Lagging-leg switch subjected to ZVS transitions and high dv/dt stress.

Use Value: Low Q_gd/Q_g ratio (0.44) ensures reliable ZVS across 20–100% load, reducing switching loss by 30% vs standard superjunction devices.

Use Scenario: 6.6 kW bidirectional OBC operating in dual-phase interleaved PFC + CLLC DC-DC configuration.

IC Role / Device Role / Timing Role: Primary-side CLLC resonant switch managing 74 A RMS current with 150 °C junction temperature limit.

Use Value: 150 °C T_jmax and 25 A I_AS rating support continuous operation under automotive thermal cycling requirements without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW80NM60ND	Same R_DS(on) (0.030 Ω), but D²PAK surface-mount package; higher R_thj-amb (30 °C/W vs 0.28 °C/W)	Requires PCB copper area for thermal management instead of bolted heatsink; unsuitable for >150 W standalone mounting	Select when board space is constrained and forced-air cooling is available
IPP60R041C6	Infineon CoolMOS™ C6; 0.041 Ω R_DS(on), 220 nC Q_g, lower C_oss (320 pF)	Better light-load efficiency due to lower Q_g, but higher conduction loss at full load; not 100% avalanche tested	Select for variable-load applications where partial-load efficiency dominates system spec

Compared with STW80NM60ND and IPP60R041C6, the STY80NM60N offers superior thermal coupling via its isolated-tab Max247 package and guaranteed avalanche ruggedness-critical for industrial PFC and solar inverters where reliability under fault conditions is non-negotiable.

Availability

STY80NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar inverters, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for STY80NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STY80NM60N belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in 600 V-class applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STY80NM60N supports 46 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits under sustained conduction, and must be validated against actual heatsink performance and ambient conditions in the final layout.

Is the source-drain diode suitable for synchronous rectification?

No-the integrated body diode has 700–840 ns reverse recovery time and 25–30 µC Q_rr, making it unsuitable for synchronous rectification. It is designed for freewheeling and clamping functions only; external Schottky or SiC diodes are required for SR implementation.

Does STY80NM60N require gate resistors for stability?

Yes-a gate resistor of ≤4.7 Ω is recommended to suppress parasitic oscillation and control dv/dt-induced turn-on. The device's 2.0 Ω gate input resistance and 160 nC Q_gd make it sensitive to layout-induced ringing, especially in high-di/dt applications like PFC boost stages.

Can STY80NM60N be used in avalanche mode continuously?

No-E_AS = 2 J specifies single-pulse unclamped inductive energy rating only. Continuous avalanche operation exceeds safe operating area limits and causes irreversible junction damage; proper clamping or snubbing must prevent avalanche initiation during normal operation.

STY80NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 74A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 360 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 10100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 447W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: MAX247™

STY80NM60N FAQ

1.How can I place an order for STY80NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STY80NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STY80NM60N reliable?

The price and inventory of STY80NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STY80NM60N is usually 5 days.

3.What payment methods are accepted for STY80NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STY80NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STY80NM60N?

STY80NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STY80NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STY80NM60N?

For technical support, including STY80NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STY80NM60N requirements.

6.How does Aetrix verify that STY80NM60N is sourced from the original manufacturer or authorized distributors?

All STY80NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STY80NM60N meets industry standards.

7.What is the process for return or replacement of STY80NM60N?

All STY80NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STY80NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STY80NM60N part is unused and in its original packaging.

Return procedure for STY80NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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