Vishay Siliconix SUD06N10-225L-E3
- Part No.:
- SUD06N10-225L-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD06N10-225L-E3.pdf
- Description:
- MOSFET N-CH 100V 6.5A TO252
- Quantity:
- Payment:

- Shipping:

Inventory:8,353
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Product details
Overview
SUD06N10-225L-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 100 V drain-source voltage, 6.5 A continuous drain current at TC = 25 °C, and 0.225 Ω typical RDS(on) at VGS = 4.5 V. It features TO-252 (DPAK) surface-mount package with drain-connected tab, optimized for DC-DC converters and load switching in industrial power supplies.
For engineers reviewing the SUD06N10-225L-E3 datasheet, SUD06N10-225L-E3 pinout, SUD06N10-225L-E3 application, or SUD06N10-225L-E3 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 2.7 nC total gate charge, 175 °C maximum junction temperature, and avalanche-rated ruggedness for unclamped inductive switching.
Technical Context
This MOSFET employs planar silicon technology with a fully characterized safe operating area (SOA) curve and specified repetitive avalanche energy (1.25 mJ). Its gate threshold voltage range (1.0–3.0 V) ensures reliable turn-on with standard logic-level drivers while maintaining low leakage (IDSS ≤ 250 µA at 175 °C).
The device integrates a built-in body diode with 0.9–1.3 V forward voltage at 6.5 A and 35–60 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage before breakdown; supports 48 V input systems with 2× safety margin. |
| RDS(on) @ VGS = 4.5 V | 0.225 Ω - Enables efficient 6 A switching at logic-level gate drive; reduces conduction loss in battery-powered loads. |
| ID (continuous, TC = 25 °C) | 6.5 A - Sustained current capability with TO-252 copper-tab thermal path to PCB heatsink. |
| Qg (total) | 2.7 nC - Low gate charge minimizes driver power and switching losses in high-frequency PWM stages. |
| TJ max | 175 °C - Rated for operation in sealed enclosures or high-ambient industrial environments. |
| EAR (repetitive) | 1.25 mJ - Confirmed avalanche energy rating allows robust handling of inductive kickback without snubbers. |
| VGS(th) | 1.0–3.0 V - Guaranteed turn-on with 3.3 V microcontrollers; avoids partial-enhancement region operation. |
Pinout & Package
TO-252 (DPAK) surface-mount package with exposed drain pad thermally and electrically connected to the drain terminal. Standard 3-pin layout: Gate (G), Drain (D), Source (S), with drain tab soldered directly to PCB copper for enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control electrode; accepts 0–20 V gate-source voltage; requires <2.7 nC charge for full enhancement. |
| D | Drain | Main high-side current path; internally bonded to metal tab for low-inductance, high-current routing to PCB ground plane. |
| S | Source | Reference node for gate drive; connects to load return path; forms cathode of integrated body diode. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V control systems. |
| Drain-connected tab | TO-252 thermal pad tied to drain - enables direct thermal coupling to heatsinked PCB layers without isolation. |
| Specified avalanche capability | 1.25 mJ repetitive energy - validated for unclamped inductive switching in motor drives and solenoid controls. |
| Low Qgd/Qg ratio | 0.7/2.7 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk. |
| High-temperature RDS(on) stability | 0.450 Ω max at TJ = 175 °C - maintains predictable conduction loss across full industrial temperature range. |
Applications
| DC-DC Buck Converter | Industrial Load Switch |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V for PLC I/O modules. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz PWM frequency. Use Value: 0.225 Ω RDS(on) at 4.5 V gate drive reduces conduction loss by 35% vs. legacy 5 V gate MOSFETs in same footprint. | Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V solenoid valves. IC Role / Device Role / Timing Role: Low-side load switch with controlled turn-on/turn-off via microcontroller GPIO. Use Value: 175 °C junction rating and 1.25 mJ avalanche energy ensure reliability during valve coil de-energization transients. |
| Motor Driver Half-Bridge | Hot-Swap Controller |
Use Scenario: Low-voltage BLDC motor commutation in HVAC fan modules. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology with bootstrap gate drive. Use Value: 2.7 nC Qg enables fast switching with minimal gate driver stress and reduced EMI generation. | Use Scenario: Inrush current limiting for 12 V backplane insertion in telecom shelf systems. IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC feedback loop. Use Value: TO-252 drain tab provides direct thermal path to PCB copper, sustaining 6.5 A continuous current without external heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML0060TRPBF | 60 V VDS, 0.055 Ω RDS(on) @ 4.5 V, SOT-23 package | Lower voltage rating and current capacity; suited only for sub-2 A, ≤30 V loads | Select when board space is critical and voltage/current requirements are significantly lower. |
| DMN3025LSD-13 | 30 V VDS, 0.025 Ω RDS(on) @ 4.5 V, SO-8 package with dual N-ch | Half the voltage rating; dual configuration enables compact half-bridge layouts | Choose for cost-sensitive 5–12 V systems requiring integrated high/low-side pairing. |
Compared with IRLML0060TRPBF and DMN3025LSD-13, the SUD06N10-225L-E3 delivers higher voltage headroom (100 V), superior single-device current handling (6.5 A), and proven avalanche ruggedness-making it the preferred choice for industrial 24–48 V power switching where reliability under transient stress is mandatory.
Availability
SUD06N10-225L-E3 is available at Aetrix Electronics and suitable for industrial motor controls, telecom power supplies, and automotive body electronics requiring stable component supply and long-term lifecycle support.
Supply support for SUD06N10-225L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and thermal performance.
The SUD06N10-225L-E3 belongs to Vishay's TrenchFET® Gen II logic-level MOSFET family, engineered for high-efficiency, high-reliability switching in space-constrained industrial and transportation power systems.
FAQ
What is the maximum continuous drain current for the SUD06N10-225L-E3 at 125 °C case temperature?
The SUD06N10-225L-E3 supports 3.75 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package under sustained high-temperature operation and must be verified against actual PCB layout and airflow conditions in the final design.
Does the SUD06N10-225L-E3 have a lead-free finish, and what does the "-E3" suffix indicate?
Yes, the "-E3" suffix on SUD06N10-225L-E3 denotes Vishay's lead-free, RoHS-compliant termination with matte tin plating. The device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is compatible with standard SnPb and lead-free reflow profiles per the manufacturer's packaging specification document 71253.
Can the SUD06N10-225L-E3 be used in avalanche mode, and what is its rated repetitive avalanche energy?
Yes, the SUD06N10-225L-E3 is fully characterized for repetitive avalanche operation with a rated energy of 1.25 mJ (L = 0.1 mH, duty cycle 1%). This value is measured and guaranteed per Vishay's test methodology in the datasheet, making the SUD06N10-225L-E3 suitable for inductive load switching without external clamping components.
What is the typical gate threshold voltage range for the SUD06N10-225L-E3, and how does it affect microcontroller interfacing?
The SUD06N10-225L-E3 has a VGS(th) range of 1.0–3.0 V at TJ = 25 °C. This ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs, avoiding the undefined linear region common in higher-threshold MOSFETs. Full enhancement occurs well within standard logic voltage levels, simplifying drive circuitry for the SUD06N10-225L-E3.
How does the thermal resistance of the SUD06N10-225L-E3 compare between junction-to-case and junction-to-ambient configurations?
The SUD06N10-225L-E3 has a typical RthJC of 6.0 °C/W and a maximum RthJA of 100 °C/W when mounted on a 1" × 1" FR4 board. The large difference highlights the critical role of PCB copper area: effective heatsinking through the drain tab reduces thermal impedance by up to 16×, making proper layout essential for achieving the SUD06N10-225L-E3's 6.5 A current rating.
SUD06N10-225L-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 240 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.25W (Ta), 20W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SUD06N10-225L-E3 FAQ
1.How can I place an order for SUD06N10-225L-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD06N10-225L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD06N10-225L-E3 reliable?
The price and inventory of SUD06N10-225L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD06N10-225L-E3 is usually 5 days.
3.What payment methods are accepted for SUD06N10-225L-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD06N10-225L-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD06N10-225L-E3?
SUD06N10-225L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD06N10-225L-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD06N10-225L-E3?
For technical support, including SUD06N10-225L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD06N10-225L-E3 requirements.
6.How does Aetrix verify that SUD06N10-225L-E3 is sourced from the original manufacturer or authorized distributors?
All SUD06N10-225L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD06N10-225L-E3 meets industry standards.
7.What is the process for return or replacement of SUD06N10-225L-E3?
All SUD06N10-225L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD06N10-225L-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD06N10-225L-E3 part is unused and in its original packaging.
Return procedure for SUD06N10-225L-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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