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Vishay Siliconix SUD06N10-225L-E3

Part No.:
SUD06N10-225L-E3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSUD06N10-225L-E3.pdf
Description:
MOSFET N-CH 100V 6.5A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,353

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Product details

Overview

SUD06N10-225L-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 100 V drain-source voltage, 6.5 A continuous drain current at TC = 25 °C, and 0.225 Ω typical RDS(on) at VGS = 4.5 V. It features TO-252 (DPAK) surface-mount package with drain-connected tab, optimized for DC-DC converters and load switching in industrial power supplies.

For engineers reviewing the SUD06N10-225L-E3 datasheet, SUD06N10-225L-E3 pinout, SUD06N10-225L-E3 application, or SUD06N10-225L-E3 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 2.7 nC total gate charge, 175 °C maximum junction temperature, and avalanche-rated ruggedness for unclamped inductive switching.

Technical Context

This MOSFET employs planar silicon technology with a fully characterized safe operating area (SOA) curve and specified repetitive avalanche energy (1.25 mJ). Its gate threshold voltage range (1.0–3.0 V) ensures reliable turn-on with standard logic-level drivers while maintaining low leakage (IDSS ≤ 250 µA at 175 °C).

The device integrates a built-in body diode with 0.9–1.3 V forward voltage at 6.5 A and 35–60 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Maximum blocking voltage before breakdown; supports 48 V input systems with 2× safety margin.
RDS(on) @ VGS = 4.5 V0.225 Ω - Enables efficient 6 A switching at logic-level gate drive; reduces conduction loss in battery-powered loads.
ID (continuous, TC = 25 °C)6.5 A - Sustained current capability with TO-252 copper-tab thermal path to PCB heatsink.
Qg (total)2.7 nC - Low gate charge minimizes driver power and switching losses in high-frequency PWM stages.
TJ max175 °C - Rated for operation in sealed enclosures or high-ambient industrial environments.
EAR (repetitive)1.25 mJ - Confirmed avalanche energy rating allows robust handling of inductive kickback without snubbers.
VGS(th)1.0–3.0 V - Guaranteed turn-on with 3.3 V microcontrollers; avoids partial-enhancement region operation.

Pinout & Package

TO-252 (DPAK) surface-mount package with exposed drain pad thermally and electrically connected to the drain terminal. Standard 3-pin layout: Gate (G), Drain (D), Source (S), with drain tab soldered directly to PCB copper for enhanced thermal dissipation.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl electrode; accepts 0–20 V gate-source voltage; requires <2.7 nC charge for full enhancement.
DDrainMain high-side current path; internally bonded to metal tab for low-inductance, high-current routing to PCB ground plane.
SSourceReference node for gate drive; connects to load return path; forms cathode of integrated body diode.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V control systems.
Drain-connected tabTO-252 thermal pad tied to drain - enables direct thermal coupling to heatsinked PCB layers without isolation.
Specified avalanche capability1.25 mJ repetitive energy - validated for unclamped inductive switching in motor drives and solenoid controls.
Low Qgd/Qg ratio0.7/2.7 nC - improves hard-switching efficiency and reduces Miller-induced shoot-through risk.
High-temperature RDS(on) stability0.450 Ω max at TJ = 175 °C - maintains predictable conduction loss across full industrial temperature range.

Applications

DC-DC Buck ConverterIndustrial Load Switch

Use Scenario: Step-down regulation from 48 V bus to 12 V for PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz PWM frequency.

Use Value: 0.225 Ω RDS(on) at 4.5 V gate drive reduces conduction loss by 35% vs. legacy 5 V gate MOSFETs in same footprint.

Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V solenoid valves.

IC Role / Device Role / Timing Role: Low-side load switch with controlled turn-on/turn-off via microcontroller GPIO.

Use Value: 175 °C junction rating and 1.25 mJ avalanche energy ensure reliability during valve coil de-energization transients.

Motor Driver Half-BridgeHot-Swap Controller

Use Scenario: Low-voltage BLDC motor commutation in HVAC fan modules.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology with bootstrap gate drive.

Use Value: 2.7 nC Qg enables fast switching with minimal gate driver stress and reduced EMI generation.

Use Scenario: Inrush current limiting for 12 V backplane insertion in telecom shelf systems.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC feedback loop.

Use Value: TO-252 drain tab provides direct thermal path to PCB copper, sustaining 6.5 A continuous current without external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLML0060TRPBF60 V VDS, 0.055 Ω RDS(on) @ 4.5 V, SOT-23 packageLower voltage rating and current capacity; suited only for sub-2 A, ≤30 V loadsSelect when board space is critical and voltage/current requirements are significantly lower.
DMN3025LSD-1330 V VDS, 0.025 Ω RDS(on) @ 4.5 V, SO-8 package with dual N-chHalf the voltage rating; dual configuration enables compact half-bridge layoutsChoose for cost-sensitive 5–12 V systems requiring integrated high/low-side pairing.

Compared with IRLML0060TRPBF and DMN3025LSD-13, the SUD06N10-225L-E3 delivers higher voltage headroom (100 V), superior single-device current handling (6.5 A), and proven avalanche ruggedness-making it the preferred choice for industrial 24–48 V power switching where reliability under transient stress is mandatory.

Availability

SUD06N10-225L-E3 is available at Aetrix Electronics and suitable for industrial motor controls, telecom power supplies, and automotive body electronics requiring stable component supply and long-term lifecycle support.

Supply support for SUD06N10-225L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and thermal performance.

The SUD06N10-225L-E3 belongs to Vishay's TrenchFET® Gen II logic-level MOSFET family, engineered for high-efficiency, high-reliability switching in space-constrained industrial and transportation power systems.

FAQ

What is the maximum continuous drain current for the SUD06N10-225L-E3 at 125 °C case temperature?

The SUD06N10-225L-E3 supports 3.75 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package under sustained high-temperature operation and must be verified against actual PCB layout and airflow conditions in the final design.

Does the SUD06N10-225L-E3 have a lead-free finish, and what does the "-E3" suffix indicate?

Yes, the "-E3" suffix on SUD06N10-225L-E3 denotes Vishay's lead-free, RoHS-compliant termination with matte tin plating. The device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and is compatible with standard SnPb and lead-free reflow profiles per the manufacturer's packaging specification document 71253.

Can the SUD06N10-225L-E3 be used in avalanche mode, and what is its rated repetitive avalanche energy?

Yes, the SUD06N10-225L-E3 is fully characterized for repetitive avalanche operation with a rated energy of 1.25 mJ (L = 0.1 mH, duty cycle 1%). This value is measured and guaranteed per Vishay's test methodology in the datasheet, making the SUD06N10-225L-E3 suitable for inductive load switching without external clamping components.

What is the typical gate threshold voltage range for the SUD06N10-225L-E3, and how does it affect microcontroller interfacing?

The SUD06N10-225L-E3 has a VGS(th) range of 1.0–3.0 V at TJ = 25 °C. This ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs, avoiding the undefined linear region common in higher-threshold MOSFETs. Full enhancement occurs well within standard logic voltage levels, simplifying drive circuitry for the SUD06N10-225L-E3.

How does the thermal resistance of the SUD06N10-225L-E3 compare between junction-to-case and junction-to-ambient configurations?

The SUD06N10-225L-E3 has a typical RthJC of 6.0 °C/W and a maximum RthJA of 100 °C/W when mounted on a 1" × 1" FR4 board. The large difference highlights the critical role of PCB copper area: effective heatsinking through the drain tab reduces thermal impedance by up to 16×, making proper layout essential for achieving the SUD06N10-225L-E3's 6.5 A current rating.

SUD06N10-225L-E3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
TrenchFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
4 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
240 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.25W (Ta), 20W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

SUD06N10-225L-E3 FAQ

1.How can I place an order for SUD06N10-225L-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD06N10-225L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD06N10-225L-E3 reliable?

The price and inventory of SUD06N10-225L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD06N10-225L-E3 is usually 5 days.

3.What payment methods are accepted for SUD06N10-225L-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD06N10-225L-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD06N10-225L-E3?

SUD06N10-225L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD06N10-225L-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD06N10-225L-E3?

For technical support, including SUD06N10-225L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD06N10-225L-E3 requirements.

6.How does Aetrix verify that SUD06N10-225L-E3 is sourced from the original manufacturer or authorized distributors?

All SUD06N10-225L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD06N10-225L-E3 meets industry standards.

7.What is the process for return or replacement of SUD06N10-225L-E3?

All SUD06N10-225L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD06N10-225L-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD06N10-225L-E3 part is unused and in its original packaging.

Return procedure for SUD06N10-225L-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SUD06N10-225L-E3 Tags

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