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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD23N06-31-GE3

Name: SUD23N06-31-GE3
Brand: Vishay Siliconix
SKU: SUD23N06-31-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD23N06-31-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD23N06-31-GE3.pdf

Description:: MOSFET N-CH 60V 21.4A TO252

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Product details

Overview

SUD23N06-31-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 0.031 Ω at V_GS = 10 V and 15 A, 6.5 nC total gate charge, and TO-252 (DPAK) package. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC/DC converters.

For engineers reviewing the SUD23N06-31-GE3 datasheet, SUD23N06-31-GE3 pinout, SUD23N06-31-GE3 application, or SUD23N06-31-GE3 equivalent, key selection criteria include its 0.045 Ω R_DS(on) at 4.5 V drive, 100 % UIS tested ruggedness, halogen-free and RoHS-compliant construction, and thermal performance validated to 150 °C junction temperature.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance with fast switching dynamics-evidenced by 8 ns turn-on delay and 25 ns rise time at 10 V gate drive. Its body diode exhibits 30 ns reverse recovery time and 35 nC Q_rr, supporting efficient hard-switched and synchronous rectification topologies.

The device features guaranteed gate threshold voltage (1.0–3.0 V), ±20 V gate-source rating, and 100 % R_g testing. Thermal design is supported by R_thJC = 3.2 °C/W (typ.) and R_thJA = 18 °C/W (t ≤ 10 s), enabling compact PCB layouts with minimal heatsinking in surface-mount applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input systems and 36 V battery rails.
R_DS(on)	0.031 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 15 A, critical for high-current point-of-load converters.
Q_g	6.5 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables efficient operation with 3.3 V or 5 V logic-level controllers.
I_D (cont)	9.1 A @ T_A = 25 °C - Validated continuous current on standard 1" × 1" FR4 board without forced air.
E_AS	20 mJ - Avalanche energy rating supports robustness against inductive switching transients in motor drives and SMPS.
R_thJC	3.2 °C/W - Enables direct thermal coupling to copper pour or heatsink for >20 W power dissipation in thermally constrained designs.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for enhanced thermal transfer. Standard footprint per Vishay Application Note 826 with recommended pad dimensions: 6.18 mm × 5.69 mm thermal pad, 2.28 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–10 V logic-level drive; 1.6 Ω gate resistance minimizes ringing in high-dV/dt environments.
S (Source)	Reference node / return path	Common reference for gate drive and load current; ties to power ground plane with low-inductance layout.
D (Drain)	High-side or low-side power path	Connected internally to exposed metal tab-must be routed to high-current net and thermally coupled to PCB copper.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers optimized R_DS(on) × Q_g figure of merit for high-frequency switching efficiency in 300 kHz–1 MHz DC/DC stages.
100 % UIS tested	Each unit validated for unclamped inductive switching stress-ensures reliability in flyback, boost, and half-bridge configurations.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC-supports environmental compliance for industrial and telecom end equipment.
Drain-connected tab	Enables direct thermal interface to PCB copper area or external heatsink-reduces junction-to-ambient thermal resistance by up to 40 %.

Applications

Server VRM	Industrial PLC Power Supply
Use Scenario: High-density 12 V input → 1.2 V output buck converter delivering up to 60 A to CPU cores. IC Role / Device Role / Timing Role: Synchronous rectifier in bottom-FET position, switching at 500 kHz with 4.5 V gate drive from integrated controller. Use Value: 0.045 Ω R_DS(on) at 4.5 V ensures <3 W conduction loss at full load, reducing thermal burden on multilayer PCB.	Use Scenario: 24 V DC input isolated forward converter powering I/O modules and fieldbus interfaces. IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive 60 V transient spikes during transformer reset. Use Value: 20 mJ E_AS rating withstands repeated 40 V, 10 µs overvoltage events without degradation.
Automotive Body Control Module	Telecom DC/DC Brick
Use Scenario: Load switch for 12 V battery-fed lighting and actuator circuits with reverse polarity protection. IC Role / Device Role / Timing Role: High-side switch controlled via microcontroller GPIO, leveraging 1.0–3.0 V V_GS(th) for predictable turn-on. Use Value: Guaranteed 1.0 V minimum threshold ensures reliable activation even with 3.3 V MCU outputs under cold-crank conditions (6.5 V battery).	Use Scenario: Secondary-side synchronous rectifier in 48 V input telecom brick operating at 300 kHz with tight efficiency targets. IC Role / Device Role / Timing Role: Fast-recovery body diode (30 ns t_rr) minimizes dead-time losses during zero-voltage switching transitions. Use Value: 35 nC Q_rr reduces reverse recovery charge injection, lowering EMI and improving light-load regulation stability.

Server VRM

Industrial PLC Power Supply

Use Scenario: High-density 12 V input → 1.2 V output buck converter delivering up to 60 A to CPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in bottom-FET position, switching at 500 kHz with 4.5 V gate drive from integrated controller.

Use Value: 0.045 Ω R_DS(on) at 4.5 V ensures <3 W conduction loss at full load, reducing thermal burden on multilayer PCB.

Use Scenario: 24 V DC input isolated forward converter powering I/O modules and fieldbus interfaces.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive 60 V transient spikes during transformer reset.

Use Value: 20 mJ E_AS rating withstands repeated 40 V, 10 µs overvoltage events without degradation.

Automotive Body Control Module

Telecom DC/DC Brick

Use Scenario: Load switch for 12 V battery-fed lighting and actuator circuits with reverse polarity protection.

IC Role / Device Role / Timing Role: High-side switch controlled via microcontroller GPIO, leveraging 1.0–3.0 V V_GS(th) for predictable turn-on.

Use Value: Guaranteed 1.0 V minimum threshold ensures reliable activation even with 3.3 V MCU outputs under cold-crank conditions (6.5 V battery).

Use Scenario: Secondary-side synchronous rectifier in 48 V input telecom brick operating at 300 kHz with tight efficiency targets.

IC Role / Device Role / Timing Role: Fast-recovery body diode (30 ns t_rr) minimizes dead-time losses during zero-voltage switching transitions.

Use Value: 35 nC Q_rr reduces reverse recovery charge injection, lowering EMI and improving light-load regulation stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 4.5 V; TO-236 package; lower current rating (4.3 A).	Best suited for space-constrained, low-power (<5 W) loads where thermal mass is limited.	Select when board area is critical and peak current stays below 4 A-SUD23N06-31-GE3 offers 2× higher current capability in same DPAK footprint.
DMN3025LSD-13	R_DS(on) = 0.025 Ω @ 10 V; dual N-channel SO-8; no integrated thermal tab.	Designed for dual-switch configurations (e.g., half-bridge) but lacks single-device thermal performance.	Choose for integrated half-bridge designs requiring matched devices; SUD23N06-31-GE3 provides superior thermal management for high-duty-cycle single-switch use.

Compared with IRLML6344TRPBF and DMN3025LSD-13, the SUD23N06-31-GE3 delivers higher current density in TO-252, better avalanche ruggedness (20 mJ vs. <10 mJ), and proven suitability for 9–15 A DC/DC output stages-making it optimal for thermally demanding, medium-power applications.

Availability

SUD23N06-31-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for SUD23N06-31-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SUD23N06-31-GE3 belongs to Vishay's TrenchFET® Gen III family-engineered specifically for high-efficiency, high-reliability DC/DC conversion in computing, industrial, and automotive power systems.

FAQ

What is the maximum continuous drain current for SUD23N06-31-GE3 at 70 °C ambient temperature?

The SUD23N06-31-GE3 supports 7.6 A continuous drain current at T_A = 70 °C on a 1" × 1" FR4 board. This rating reflects real-world thermal derating and assumes no forced airflow-designers must verify PCB copper area and layout to maintain this performance in their system.

Does SUD23N06-31-GE3 support logic-level gate drive?

Yes, the SUD23N06-31-GE3 has a gate threshold voltage range of 1.0–3.0 V and delivers R_DS(on) = 0.045 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V and 5 V microcontroller or PWM controller outputs without requiring gate drivers.

Is SUD23N06-31-GE3 suitable for avalanche-prone circuits like flyback converters?

Yes, the SUD23N06-31-GE3 is 100 % unclamped inductive switching (UIS) tested and rated for 20 mJ single-pulse avalanche energy. This makes it appropriate for flyback primary switches and other topologies where voltage overshoot exceeds V_DS rating during switching transitions.

What is the thermal resistance from junction to case for SUD23N06-31-GE3?

The SUD23N06-31-GE3 has a typical junction-to-case thermal resistance (R_thJC) of 3.2 °C/W. This value is measured under steady-state conditions and enables accurate thermal modeling when the drain tab is soldered to a large copper area or attached to an external heatsink.

How does the body diode performance of SUD23N06-31-GE3 compare to standard silicon diodes?

The SUD23N06-31-GE3 body diode has a forward voltage of 1.0–1.5 V at 15 A and reverse recovery time of 30–60 ns-significantly faster than general-purpose rectifiers. This allows efficient synchronous rectification in buck and forward converters without adding external Schottky diodes.

SUD23N06-31-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 21.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 5.7W (Ta), 31.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD23N06-31-GE3 FAQ

1.How can I place an order for SUD23N06-31-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD23N06-31-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD23N06-31-GE3 reliable?

The price and inventory of SUD23N06-31-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD23N06-31-GE3 is usually 5 days.

3.What payment methods are accepted for SUD23N06-31-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD23N06-31-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD23N06-31-GE3?

SUD23N06-31-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD23N06-31-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD23N06-31-GE3?

For technical support, including SUD23N06-31-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD23N06-31-GE3 requirements.

6.How does Aetrix verify that SUD23N06-31-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD23N06-31-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD23N06-31-GE3 meets industry standards.

7.What is the process for return or replacement of SUD23N06-31-GE3?

All SUD23N06-31-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD23N06-31-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD23N06-31-GE3 part is unused and in its original packaging.

Return procedure for SUD23N06-31-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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