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Vishay Siliconix SUD50N02-09P-GE3
- Part No.:
- SUD50N02-09P-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SUD50N02-09P-GE3.pdf
- Description:
- MOSFET N-CH 20V 20A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:7,590
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Product details
Overview
SUD50N02-09P-GE3 from Vishay Siliconix is an N-channel TrenchFET power MOSFET rated for 20 V drain-source voltage, 0.0095 Ω rDS(on) at VGS = 10 V, and 20 A continuous drain current at TA = 25 °C. It operates up to 175 °C junction temperature and is optimized for high-efficiency PWM in high-side synchronous buck DC/DC converters used in desktop and server power supplies.
For engineers reviewing the SUD50N02-09P-GE3 datasheet, SUD50N02-09P-GE3 pinout, SUD50N02-09P-GE3 application, or SUD50N02-09P-GE3 equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive (0.017 Ω), 100% Rg tested gate resistance, TO-252 package thermal performance, and avalanche energy rating of 42 mJ - all critical for reliable high-current switching in compact power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low conduction losses and fast switching with controlled gate charge (Qg = 10.5–16 nC). Its gate threshold voltage range (0.8–3.0 V) ensures robust turn-on margin under varying conditions while maintaining low IDSS leakage (<1 µA at 20 V).
The device features a drain-connected tab in TO-252 (DPAK) packaging, enabling efficient heat transfer to the PCB. Its dynamic parameters - including Ciss = 1300 pF, Crss = 275 pF, and trr = 35–70 ns for the integrated body diode - support stable operation in hard-switched synchronous rectification topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12 V input rails and transient margins in point-of-load converters. |
| rDS(on) | 0.0095 Ω @ VGS = 10 V - Enables <1 W conduction loss at 20 A, reducing thermal stress in high-current paths. |
| ID (continuous) | 20 A @ TA = 25 °C - Supports high-output-current buck stages without forced airflow on standard FR4 boards. |
| EAS | 42 mJ - Withstands single-pulse inductive energy during fault events without failure in synchronous buck configurations. |
| RthJA | 40–50 °C/W - Defines thermal derating curve; limits usable current to ~14 A at TC = 100 °C per absolute maximum ratings. |
| Qg | 10.5–16 nC - Determines gate driver power requirement and switching loss trade-off at typical 500 kHz–1 MHz frequencies. |
| VGS(th) | 0.8–3.0 V - Ensures reliable enhancement-mode turn-on with standard logic-level or PWM controller gate drivers. |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current path output terminal | Internally connected to exposed metal tab; must be routed to high-current power plane with adequate copper area for thermal dissipation. |
| G (Gate) | Control input for channel conduction | High-impedance node requiring low-inductance gate loop; Rg tested 1.6–4.0 Ω ensures consistent switching timing. |
| S (Source) | Reference node for gate drive and current return | Common return path for load current and gate driver ground; critical for minimizing shoot-through risk in half-bridge layouts. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET architecture | Delivers lower rDS(on) per die area than planar MOSFETs, enabling higher current density in TO-252 footprint. |
| PWM-optimized switching | Engineered Qg/Crss ratio minimizes Miller-induced switching delay and improves efficiency in high-frequency DC/DC stages. |
| 100% Rg tested | Guarantees gate resistance between 1.6–4.0 Ω, ensuring predictable rise/fall times and driver stage sizing. |
| 175 °C TJ rating | Supports operation in thermally constrained server VRM environments without derating below full current capability. |
Applications
| Desktop Power Supply VRMs | Server CPU Voltage Regulators |
|---|---|
Use Scenario: High-side switch in multiphase synchronous buck converters delivering 12 V to 1.0 V at >100 A to modern CPUs. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input rail to output inductor; duty-cycle modulated by PWM controller. Use Value: Low 0.0095 Ω rDS(on) reduces conduction loss by >30% vs. legacy 12 mΩ devices, improving full-load efficiency by 0.8–1.2%. | Use Scenario: Phase-leg high-side FET in 3+1 or 4+1 VRM designs for dual-socket Xeon platforms with tight thermal envelopes. IC Role / Device Role / Timing Role: High-current, high-duty-cycle switching element synchronized to controller's gate signal with minimal dead-time penalty. Use Value: 175 °C junction rating allows sustained 20 A operation at ambient >70 °C without throttling, supporting fanless or low-fan-speed cooling modes. |
| Industrial DC/DC Modules | Telecom Intermediate Bus Converters |
Use Scenario: Primary switch in isolated or non-isolated 48 V-to-12 V intermediate bus converters for programmable logic controllers and I/O modules. IC Role / Device Role / Timing Role: High-side switch in fixed-frequency synchronous buck topology operating at 300–600 kHz with ceramic output capacitors. Use Value: 42 mJ EAS rating provides margin against inductive kickback during short-circuit events, enhancing system reliability without external snubbers. | Use Scenario: High-efficiency step-down stage in 54 V telecom rectifier outputs feeding 12 V backplane distribution networks. IC Role / Device Role / Timing Role: Low-VDS, high-ID switch optimized for 4.5 V gate drive compatibility with digital PWM controllers and PMBus interfaces. Use Value: 0.017 Ω rDS(on) at VGS = 4.5 V enables direct drive from 5 V logic, eliminating level-shifters and reducing BOM count and layout complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6242PBF | rDS(on) = 0.0075 Ω @ 4.5 V, but rated only to 16 V VDS and 12 A ID; smaller PQFN 3.3 × 3.3 mm package. | Better suited for space-constrained, lower-voltage (≤12 V) POL converters where 20 V rating is excessive. | Select when board area is critical and input voltage stays ≤12 V; verify thermal interface due to smaller footprint. |
| DMT6009LPS-13 | rDS(on) = 0.009 Ω @ 10 V, 20 V rating, but TO-263 (D2PAK) package with higher RthJC (2.5 °C/W) and larger footprint. | Preferred for higher-power systems needing >30 W dissipation where TO-252 thermal limit is exceeded. | Choose when PD > 6.5 W requires enhanced heatsinking; accept larger PCB area and higher assembly cost. |
Compared with IRLHS6242PBF and DMT6009LPS-13, the SUD50N02-09P-GE3 uniquely balances 20 V rating, TO-252 manufacturability, and 0.0095 Ω conduction loss - making it optimal for cost-sensitive, medium-power server/desktop VRMs where thermal headroom and layout simplicity are prioritized over ultra-low RthJC or sub-12 V operation.
Availability
SUD50N02-09P-GE3 is available at Aetrix Electronics and suitable for desktop power supply VRMs, server CPU voltage regulators, and industrial DC/DC modules requiring stable component supply, lead-free compliance, and long-term production continuity.
Supply support for SUD50N02-09P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and thermal performance.
The SUD50N02-09P-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-efficiency, high-current DC/DC conversion in computing and communications infrastructure where low rDS(on), fast switching, and avalanche robustness are mandatory.
FAQ
What is the maximum continuous drain current for SUD50N02-09P-GE3 at 100 °C case temperature?
The SUD50N02-09P-GE3 supports 14 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation without exceeding 175 °C junction temperature. Designers must verify PCB copper area and airflow to maintain TC ≤ 100 °C under full load.
Does SUD50N02-09P-GE3 have a built-in body diode, and what is its forward voltage?
Yes, the SUD50N02-09P-GE3 includes an integrated source-drain body diode with a forward voltage of 1.2–1.5 V at IF = 50 A and VGS = 0 V. This diode enables synchronous rectification in buck converters and supports freewheeling current during the low-side switch conduction phase. Its reverse recovery time (trr) is 35–70 ns, suitable for high-frequency operation.
Is SUD50N02-09P-GE3 RoHS-compliant and lead-free?
Yes, SUD50N02-09P-GE3 is lead-free and RoHS-compliant, as confirmed by the "-GE3" suffix in the part number and Vishay's official documentation (Document Number: 72034, Rev. C). The device meets JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for reflow soldering per IPC/JEDEC J-STD-020 standards.
What is the gate threshold voltage range for SUD50N02-09P-GE3, and how does it affect drive requirements?
The gate threshold voltage (VGS(th)) for SUD50N02-09P-GE3 is 0.8–3.0 V at TJ = 25 °C. This wide range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while avoiding unintended conduction from noise. For robust operation, gate drive should exceed 4.5 V to achieve specified rDS(on) and minimize switching losses.
Can SUD50N02-09P-GE3 be used in parallel configurations, and what precautions apply?
Yes, SUD50N02-09P-GE3 can be paralleled to increase current capacity, but requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors to ensure current sharing. Thermal coupling between devices must be minimized, and gate drive signals must be tightly synchronized to avoid shoot-through. Derating total current by ≥15% is recommended for reliability.
SUD50N02-09P-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39.5W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252
SUD50N02-09P-GE3 FAQ
1.How can I place an order for SUD50N02-09P-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUD50N02-09P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUD50N02-09P-GE3 reliable?
The price and inventory of SUD50N02-09P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N02-09P-GE3 is usually 5 days.
3.What payment methods are accepted for SUD50N02-09P-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N02-09P-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUD50N02-09P-GE3?
SUD50N02-09P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUD50N02-09P-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUD50N02-09P-GE3?
For technical support, including SUD50N02-09P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N02-09P-GE3 requirements.
6.How does Aetrix verify that SUD50N02-09P-GE3 is sourced from the original manufacturer or authorized distributors?
All SUD50N02-09P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N02-09P-GE3 meets industry standards.
7.What is the process for return or replacement of SUD50N02-09P-GE3?
All SUD50N02-09P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N02-09P-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUD50N02-09P-GE3 part is unused and in its original packaging.
Return procedure for SUD50N02-09P-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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