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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD50N03-09P-GE3

Name: SUD50N03-09P-GE3
Brand: Vishay Siliconix
SKU: SUD50N03-09P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD50N03-09P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD50N03-09P-GE3.pdf

Description:: MOSFET N-CH 30V 63A TO252

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Product details

Overview

SUD50N03-09P from Vishay Siliconix is an N-channel 30-V TrenchFET® power MOSFET in TO-252 package, optimized for high- or low-side switching in DC/DC converters and synchronous rectifiers, with R_DS(on) = 0.0095 Ω at V_GS = 10 V, 63 A continuous drain current at T_C = 25 °C, and drain-connected tab for enhanced thermal performance.

For engineers reviewing the SUD50N03-09P datasheet, SUD50N03-09P pinout, SUD50N03-09P application, or SUD50N03-09P equivalent, key selection criteria include its 30-V V_DS, 0.0095 Ω on-resistance at 10 V gate drive, 63 A thermal-limited current, TO-252 thermal resistance (R_thJC = 1.8 °C/W), and 100% R_g tested gate reliability.

Technical Context

This device uses trench-gate silicon technology to achieve low R_DS(on) and high current density in a surface-mount TO-252 package. Its gate threshold voltage (1.0–3.0 V) and low input capacitance (C_iss = 2200 pF) support fast switching in high-frequency synchronous buck stages.

The integrated body diode has V_SD = 1.2–1.5 V at 50 A and t_rr = 35–70 ns, enabling efficient reverse recovery in synchronous rectification. Drain-source avalanche energy rating (E_AS = 61 mJ) supports robust operation under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24-V input rail applications
R_DS(on) @ 10 V	0.0095 Ω - Enables <1 W conduction loss at 32 A in 12-V output stage
R_DS(on) @ 4.5 V	0.014 Ω - Supports logic-level gate drive in 5-V control systems
I_D (continuous)	63 A @ T_C = 25 °C - Thermal limit defined by TO-252 package dissipation (65.2 W)
Q_g	11–16 nC - Low gate charge enables <25 ns turn-on delay with 2.5 Ω driver
R_thJC	1.8 °C/W (typ.) - Allows junction-to-case temperature rise of ≤117 °C at 65 W
V_GS(th)	1.0–3.0 V - Ensures reliable enhancement-mode turn-on with standard microcontroller outputs

Pinout & Package

TO-252AA (DPAK) package with exposed drain-connected copper tab for direct heatsinking; 3-pin surface-mount outline per Vishay Document 71197.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–20 V gate-source voltage; 100% R_g tested for consistent switching timing
S	Source	Reference node for gate drive and current return path; tied to PCB ground plane in low-side configuration
D	Drain	Main power terminal connected internally to exposed copper tab; requires thermal pad connection to PCB for heat transfer

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.0095 Ω R_DS(on) in TO-252, reducing conduction losses by >30% vs. planar MOSFETs at same die size
Optimized for high- or low-side use	Specified R_DS(on) and Q_g validated for both configurations; no bootstrap or level-shift dependency
100% R_g tested	Guarantees gate resistance between 0.5–2.1 Ω, ensuring predictable drive strength and EMI behavior
Drain-connected tab	Enables direct thermal interface to heatsink or copper pour; reduces R_thJA to 16 °C/W (t ≤ 10 s)

Applications

DC/DC Converters	Synchronous Rectifiers
Use Scenario: High-efficiency 12-V to 3.3-V buck converter in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side power switch operating at 500 kHz with 10-V gate drive. Use Value: 0.0095 Ω R_DS(on) limits I²R loss to 0.96 W at 32 A, enabling >95% efficiency without forced air cooling.	Use Scenario: Secondary-side synchronous rectification in isolated 48-V to 12-V forward converter for telecom power supplies. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: V_SD = 1.2 V and t_rr = 35 ns reduce forward drop and recovery loss versus 0.55-V Schottky, improving full-load efficiency by 1.2%.
Motor Drive Half-Bridges	Hot-Swap Controllers
Use Scenario: 24-V BLDC motor gate driver stage in battery-powered robotic actuators. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology with bootstrap gate drive. Use Value: 30-V V_DS and 63-A rating support 20-A RMS phase current with 2× safety margin; avalanche-rated for inductive kickback.	Use Scenario: Inrush current limiting in 24-V redundant power distribution units for data center servers. IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC (e.g., LTC4215). Use Value: Low R_DS(on) minimizes voltage drop during steady-state operation; SOA curve supports safe 100-A pulsed current during capacitor charging.

DC/DC Converters

Synchronous Rectifiers

Use Scenario: High-efficiency 12-V to 3.3-V buck converter in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side power switch operating at 500 kHz with 10-V gate drive.

Use Value: 0.0095 Ω R_DS(on) limits I²R loss to 0.96 W at 32 A, enabling >95% efficiency without forced air cooling.

Use Scenario: Secondary-side synchronous rectification in isolated 48-V to 12-V forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: V_SD = 1.2 V and t_rr = 35 ns reduce forward drop and recovery loss versus 0.55-V Schottky, improving full-load efficiency by 1.2%.

Motor Drive Half-Bridges

Hot-Swap Controllers

Use Scenario: 24-V BLDC motor gate driver stage in battery-powered robotic actuators.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology with bootstrap gate drive.

Use Value: 30-V V_DS and 63-A rating support 20-A RMS phase current with 2× safety margin; avalanche-rated for inductive kickback.

Use Scenario: Inrush current limiting in 24-V redundant power distribution units for data center servers.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC (e.g., LTC4215).

Use Value: Low R_DS(on) minimizes voltage drop during steady-state operation; SOA curve supports safe 100-A pulsed current during capacitor charging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 0.006 Ω @ 10 V, but only rated for 30 V and lacks avalanche energy spec (E_AS = N/A)	Not recommended for inductive switching where V_DS spikes exceed 24 V	Select SUD50N03-09P when avalanche ruggedness and 30-V absolute max rating are required
STP55NF03L	TO-220 package, higher R_thJC = 2.5 °C/W, R_DS(on) = 0.008 Ω @ 10 V	Requires through-hole mounting and larger heatsink; unsuitable for space-constrained SMT designs	Choose SUD50N03-09P for surface-mount thermal performance and board area savings

Compared with IRL3803PbF and STP55NF03L, the SUD50N03-09P delivers superior thermal resistance (1.8 °C/W), guaranteed avalanche capability (61 mJ), and TO-252 footprint-making it optimal for compact, high-reliability 24-V power stages where layout density and transient robustness are critical.

Availability

SUD50N03-09P is available at Aetrix Electronics and suitable for DC/DC converters, synchronous rectifiers, motor drive half-bridges, and hot-swap controllers requiring stable component supply and RoHS-compliant manufacturing.

Supply support for SUD50N03-09P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUD50N03-09P belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency switching in industrial and telecom power conversion systems.

FAQ

What is the maximum continuous drain current rating for the SUD50N03-09P at 100 °C case temperature?

The SUD50N03-09P has a continuous drain current rating of 44.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package under sustained high-temperature operation, and must be applied in thermal design calculations for the SUD50N03-09P to ensure long-term reliability.

Does the SUD50N03-09P support logic-level gate drive?

Yes, the SUD50N03-09P supports logic-level gate drive with R_DS(on) = 0.014 Ω at V_GS = 4.5 V, making it compatible with 5-V microcontrollers and gate drivers. Its gate threshold voltage range (1.0–3.0 V) ensures full enhancement at standard logic-high levels, and the SUD50N03-09P maintains usable conduction down to 3.3-V drive in many layouts.

What is the thermal resistance from junction to case (R_thJC) for the SUD50N03-09P?

The SUD50N03-09P has a typical junction-to-case thermal resistance of 1.8 °C/W and a maximum of 2.3 °C/W, measured from the silicon die to the exposed drain tab. This low R_thJC enables efficient heat transfer to the PCB copper pour or external heatsink, and is a key parameter used in thermal modeling of the SUD50N03-09P in power stage designs.

Is the SUD50N03-09P RoHS compliant?

Yes, the SUD50N03-09P-E3 variant is RoHS compliant with lead-free terminations. The base part SUD50N03-09P contains lead and is not RoHS compliant unless marked with "-E3". Vishay documentation confirms RoHS compliance for the -E3 suffix version, and Aetrix Electronics stocks only RoHS-compliant variants of the SUD50N03-09P.

What is the total gate charge (Q_g) specification for the SUD50N03-09P?

The SUD50N03-09P has a total gate charge of 11–16 nC, measured at V_DS = 15 V, V_GS = 4.5 V, and I_D = 50 A. This Q_g value directly impacts switching speed and driver power requirements, and is essential for calculating gate drive losses and selecting appropriate gate drivers for the SUD50N03-09P in high-frequency applications.

SUD50N03-09P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 7.5W (Ta), 65.2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD50N03-09P-GE3 FAQ

1.How can I place an order for SUD50N03-09P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD50N03-09P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD50N03-09P-GE3 reliable?

The price and inventory of SUD50N03-09P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD50N03-09P-GE3 is usually 5 days.

3.What payment methods are accepted for SUD50N03-09P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD50N03-09P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD50N03-09P-GE3?

SUD50N03-09P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD50N03-09P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD50N03-09P-GE3?

For technical support, including SUD50N03-09P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD50N03-09P-GE3 requirements.

6.How does Aetrix verify that SUD50N03-09P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD50N03-09P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD50N03-09P-GE3 meets industry standards.

7.What is the process for return or replacement of SUD50N03-09P-GE3?

All SUD50N03-09P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD50N03-09P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD50N03-09P-GE3 part is unused and in its original packaging.

Return procedure for SUD50N03-09P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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