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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUD80460E-GE3

Name: SUD80460E-GE3
Brand: Vishay Siliconix
SKU: SUD80460E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUD80460E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SUD80460E-GE3.pdf

Description:: MOSFET N-CH 150V 42A TO252AA

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Product details

Overview

SUD80460E-GE3 from Vishay Siliconix is an N-channel 150 V, 42 A (T_C = 25 °C), TO-252-packaged power MOSFET with R_DS(on) = 0.0447 Ω at V_GS = 10 V and 175 °C maximum junction temperature, designed for high-efficiency boost converters and synchronous rectification in industrial power supplies.

For engineers reviewing the SUD80460E-GE3 datasheet, SUD80460E-GE3 pinout, SUD80460E-GE3 application, or SUD80460E-GE3 equivalent, key selection criteria include its 10.5 nC total gate charge, 560 pF input capacitance, 2.3 °C/W junction-to-case thermal resistance, and validated 100 % UIS and R_g testing for ruggedness in hard-switching topologies.

Technical Context

This ThunderFET® MOSFET features a planar silicon process optimized for low R_DS(on) × Q_g figure-of-merit (0.47 Ω·nC), enabling high-frequency switching in DC/AC inverters and LED backlighting drivers. Its body diode exhibits t_rr = 68–102 ns and Q_rr = 0.21–0.32 μC under 7 A, 100 A/μs conditions.

The device operates across -55 to +175 °C junction temperature range with V_GS(th) = 2–4 V and g_fs = 11 S (typ.) at V_DS = 15 V, ID = 8.3 A. Thermal design leverages R_thJC = 2.3 °C/W and R_thJA = 50 °C/W (PCB mount), with drain-connected tab enabling direct heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for use in 100–120 V AC-input PFC stages and 48 V DC bus inverters
R_DS(on) max	0.0447 Ω at V_GS = 10 V - Enables ≤1.6 W conduction loss at 6 A RMS in continuous conduction mode
Q_g typ.	10.5 nC - Supports efficient 500 kHz switching with moderate gate driver strength (e.g., TC4427)
I_D cont.	42 A at T_C = 25 °C - Rated for high-current output stages when mounted on ≥1"² FR4 PCB with copper pour
E_AS	31.25 mJ - Validated single-pulse avalanche energy ensures robustness against inductive turn-off transients
R_thJC	2.3 °C/W - Allows direct thermal path from die to heatsink via drain-tab mounting, critical for >20 W dissipation
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

TO-252AA (DPAK) package with exposed drain tab on underside; thermally and electrically connected to drain terminal. Standard 3-pin surface-mount outline per Vishay document 71197 (Revision 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives gate drive signal; requires <10.5 nC charge for full enhancement; R_g = 1.44–14.4 Ω (measured)
D (Drain)	High-side current path	Connected to exposed metal tab; serves as primary thermal and electrical interface to heatsink or PCB copper pour
S (Source)	Reference node / return path	Common reference for gate drive and load current; body diode anode; must be routed with low-inductance layout

Key Features

Feature	Design Value
ThunderFET® technology	Optimized planar structure delivering 0.0447 Ω R_DS(on) with 10.5 nC Q_g, reducing switching + conduction losses simultaneously
100 % R_g and UIS tested	Each unit undergoes production screening for gate resistance consistency and unclamped inductive switching survivability
175 °C rated junction	Enables operation in sealed industrial enclosures or high-ambient environments without derating below 125 °C ambient
Drain-connected tab	Provides low-thermal-resistance path (R_thJC = 2.3 °C/W) and eliminates need for isolation hardware in heatsink mounting
Low C_iss/C_oss ratio	C_iss = 560 pF, C_oss = 148 pF - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk

Applications

Boost Converter	LED Backlighting
Use Scenario: High-efficiency 12 V to 48 V boost stage in telecom power modules. IC Role / Device Role / Timing Role: Main switching FET controlling energy transfer into output inductor; switched at 200–500 kHz. Use Value: Low R_DS(on) minimizes conduction loss at high load currents; 175 °C rating supports compact thermal design.	Use Scenario: Constant-current LED driver for large-panel LCD backlighting with PWM dimming. IC Role / Device Role / Timing Role: High-side switch modulating current through LED string; duty-cycle controlled at 1–20 kHz. Use Value: Fast t_r/t_f (20–30 ns / 30–50 ns) enables clean PWM edges; low Q_g reduces gate drive power.
Synchronous Rectification	DC/AC Inverter
Use Scenario: Secondary-side rectification in isolated LLC resonant converter for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: Body diode t_rr = 68–102 ns prevents reverse recovery loss; R_DS(on) cuts forward drop vs. 0.5 V diode.	Use Scenario: Half-bridge leg in 400 W solar microinverter converting 48 V DC to 120 V AC. IC Role / Device Role / Timing Role: High-voltage switching element in H-bridge topology; operated with dead-time control at 20–40 kHz. Use Value: 150 V V_DS provides margin over 48 V × √2 × 1.2 = ~82 V peak; E_AS = 31.25 mJ handles inductive spikes.

Boost Converter

LED Backlighting

Use Scenario: High-efficiency 12 V to 48 V boost stage in telecom power modules.

IC Role / Device Role / Timing Role: Main switching FET controlling energy transfer into output inductor; switched at 200–500 kHz.

Use Value: Low R_DS(on) minimizes conduction loss at high load currents; 175 °C rating supports compact thermal design.

Use Scenario: Constant-current LED driver for large-panel LCD backlighting with PWM dimming.

IC Role / Device Role / Timing Role: High-side switch modulating current through LED string; duty-cycle controlled at 1–20 kHz.

Use Value: Fast t_r/t_f (20–30 ns / 30–50 ns) enables clean PWM edges; low Q_g reduces gate drive power.

Synchronous Rectification

DC/AC Inverter

Use Scenario: Secondary-side rectification in isolated LLC resonant converter for server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode t_rr = 68–102 ns prevents reverse recovery loss; R_DS(on) cuts forward drop vs. 0.5 V diode.

Use Scenario: Half-bridge leg in 400 W solar microinverter converting 48 V DC to 120 V AC.

IC Role / Device Role / Timing Role: High-voltage switching element in H-bridge topology; operated with dead-time control at 20–40 kHz.

Use Value: 150 V V_DS provides margin over 48 V × √2 × 1.2 = ~82 V peak; E_AS = 31.25 mJ handles inductive spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	Higher R_DS(on) = 0.008 Ω but 55 V rating; TO-220 package; no 175 °C rating	Not suitable for 150 V systems; better for low-V_DS, high-current motor drives	Select only if operating V_DS ≤ 55 V and board space allows TO-220; not a drop-in replacement
IRFZ44NPBF	R_DS(on) = 0.028 Ω at 10 V but 55 V rating; TO-220; 175 °C rated; higher Q_g = 67 nC	Limited to ≤55 V circuits; slower switching due to high Q_g; unsuitable for >200 kHz	Consider only for cost-sensitive 55 V applications where thermal margin exceeds requirements

Compared with STP80NF55-08 and IRFZ44NPBF, the SUD80460E-GE3 uniquely combines 150 V rating, 175 °C capability, and low Q_g/R_DS(on) tradeoff-making it the only viable option among the three for compact, high-temperature boost and inverter designs above 100 V.

Availability

SUD80460E-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, LED lighting drivers, and renewable energy inverters requiring stable component supply and long-term manufacturability.

Supply support for SUD80460E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedness.

The SUD80460E-GE3 belongs to Vishay's ThunderFET® family, engineered specifically for high-efficiency, high-temperature power conversion in industrial and automotive-grade applications.

FAQ

What is the maximum continuous drain current rating for the SUD80460E-GE3 at 125 °C case temperature?

The SUD80460E-GE3 has a continuous drain current rating of 18.1 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and silicon die; operation above this current requires active cooling or reduced ambient temperature. The SUD80460E-GE3 maintains safe operation up to 175 °C junction temperature, supporting high-reliability deployment in constrained thermal environments.

Does the SUD80460E-GE3 have a fully rated avalanche capability, and what is the test condition?

Yes, the SUD80460E-GE3 is 100 % tested for unclamped inductive switching (UIS) with single-pulse avalanche energy E_AS = 31.25 mJ at L = 0.1 mH and I_AS = 25 A. The test uses pulse width ≤ 300 μs and duty cycle ≤ 2 %, per Vishay specification 76248. This validated ruggedness makes the SUD80460E-GE3 suitable for flyback, boost, and half-bridge topologies where inductive turn-off stress occurs.

What is the gate-source threshold voltage range for the SUD80460E-GE3, and how does it affect gate drive design?

The SUD80460E-GE3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA, ensuring reliable turn-on with standard 3.3 V or 5 V logic-level drivers. This threshold range avoids unintended conduction near ground while maintaining compatibility with microcontroller GPIOs. For full enhancement and minimal R_DS(on), the SUD80460E-GE3 requires V_GS ≥ 10 V, as confirmed by its R_DS(on) spec at that voltage.

How does the thermal performance of the SUD80460E-GE3 compare between junction-to-case and junction-to-ambient measurements?

The SUD80460E-GE3 has R_thJC = 2.3 °C/W (junction-to-case, steady state) and R_thJA = 50 °C/W (junction-to-ambient, PCB mount). The 21.7× difference highlights the critical impact of heatsinking: with proper drain-tab attachment to a heatsink, thermal resistance drops dramatically. Without external cooling, the SUD80460E-GE3 dissipates only ~1.3 W at 25 °C ambient before reaching 175 °C junction; with heatsink, it sustains >20 W. This makes thermal interface design essential for the SUD80460E-GE3.

Is the SUD80460E-GE3 lead (Pb)-free and halogen-free, and what is its RoHS compliance status?

Yes, the SUD80460E-GE3 is lead (Pb)-free and halogen-free, as explicitly stated in the Ordering Information section of Vishay document 76248. It complies with EU RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-GE3" suffix denotes this environmental compliance, and the device is suitable for use in consumer, industrial, and medical equipment requiring green manufacturing standards. The SUD80460E-GE3 meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

SUD80460E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44.7mOhm @ 8.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 65.2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SUD80460E-GE3 FAQ

1.How can I place an order for SUD80460E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUD80460E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUD80460E-GE3 reliable?

The price and inventory of SUD80460E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUD80460E-GE3 is usually 5 days.

3.What payment methods are accepted for SUD80460E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUD80460E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUD80460E-GE3?

SUD80460E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUD80460E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUD80460E-GE3?

For technical support, including SUD80460E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUD80460E-GE3 requirements.

6.How does Aetrix verify that SUD80460E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUD80460E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUD80460E-GE3 meets industry standards.

7.What is the process for return or replacement of SUD80460E-GE3?

All SUD80460E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUD80460E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUD80460E-GE3 part is unused and in its original packaging.

Return procedure for SUD80460E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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