My Inquiry
My Account
Vishay Siliconix SUM90N03-2M2P-E3
- Part No.:
- SUM90N03-2M2P-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SUM90N03-2M2P-E3.pdf
- Description:
- MOSFET N-CH 30V 90A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:933
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SUM90N03-2M2P-E3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Power MOSFET in TO-263 (D2PAK) package, delivering 90 A continuous drain current at TC = 25 °C, RDS(on) of 2.2 mΩ at VGS = 10 V, and 82 nC total gate charge - optimized for high-efficiency OR-ing and server power distribution.
For engineers reviewing the SUM90N03-2M2P-E3 datasheet, SUM90N03-2M2P-E3 pinout, SUM90N03-2M2P-E3 application, or SUM90N03-2M2P-E3 equivalent, key selection criteria include its 30 V VDS rating, low 0.5 °C/W junction-to-case thermal resistance, 100 % Rg and UIS tested reliability, and suitability for high-current DC/DC output stages and hot-swap circuits.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance with fast switching dynamics: Qg = 82 nC (VGS = 4.5 V), trr = 52–78 ns body diode recovery, and Ciss = 12,065 pF at VDS = 15 V. Its 175 °C maximum junction temperature supports operation in thermally constrained server environments.
The device features a robust 36 A avalanche current rating (IAS) and 64.8 mJ single-pulse avalanche energy (EAS), enabling reliable operation under transient overloads without external snubbing. Gate threshold voltage is tightly specified at 1.5–2.5 V, ensuring stable turn-on across temperature and supply variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V server bus architectures. |
| RDS(on) | 2.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 90 A, critical for high-efficiency OR-ing and POL converters. |
| ID (Cont.) | 90 A @ TC = 25 °C - Package-limited current capacity; requires heatsink or PCB copper area for sustained operation. |
| Qg | 82 nC @ VGS = 4.5 V - Determines gate drive power and switching speed in synchronous rectifier and hot-swap applications. |
| RthJC | 0.5 °C/W (typ.) - Enables high-power dissipation via case-mounted heatsink; supports >200 W thermal handling with proper mounting. |
| VGS(th) | 1.5–2.5 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers without level-shifting. |
| EAS | 64.8 mJ - Withstands repetitive inductive switching stress in DC/DC output stages without derating. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. #71198 (Rev. 28-Oct-2024).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives gate drive signal; low 1.4–2.1 Ω gate resistance enables fast, damped switching transitions. |
| D (Drain) | High-side power terminal | Connected to exposed metal tab; serves as primary heat path and high-current return node in OR-ing configurations. |
| S (Source) | Reference and current return | Provides source reference for gate drive; used as Kelvin sense point in precision current monitoring designs. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced switching + conduction losses in high-frequency POLs. |
| 100 % Rg and UIS tested | Ensures gate robustness against ringing-induced failure and ruggedness against unclamped inductive switching events. |
| Low VSD body diode | 0.8–1.2 V forward drop at IS = 22 A reduces reverse-recovery losses and improves efficiency in bidirectional power paths. |
| Lead (Pb)-free, RoHS-compliant | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); suitable for lead-free reflow assembly without preconditioning. |
| −55 to +175 °C TJ range | Supports operation in high-ambient environments such as baseplate-mounted server VRMs and telecom rectifiers. |
Applications
| Server OR-ing Circuit | Hot-Swap Controller Interface |
|---|---|
|
Use Scenario: Parallel redundant 12 V power supplies feeding a common bus in rack-mounted servers. IC Role / Device Role / Timing Role: High-side N-channel switch controlling power path direction and preventing backfeed during supply failure. Use Value: 2.2 mΩ RDS(on) minimizes voltage drop and heat generation during 80–100 A load currents, improving system efficiency and thermal margin. |
Use Scenario: Inrush current limiting and fault isolation in modular line cards inserted into live backplanes. IC Role / Device Role / Timing Role: Main pass element controlled by hot-swap controller IC (e.g., LTC4215) to ramp voltage and limit surge. Use Value: 90 A continuous rating and 200 A pulsed capability support rapid, controlled insertion without thermal shutdown or gate oscillation. |
| DC/DC Synchronous Rectifier | Industrial 24 V Power Distribution |
|
Use Scenario: Secondary-side synchronous rectification in isolated 30 V output DC/DC converters for AI accelerators. IC Role / Device Role / Timing Role: Low-side or high-side synchronous rectifier replacing Schottky diodes to reduce conduction loss. Use Value: Fast 52–78 ns body diode recovery and low Qgd (29 nC) enable clean commutation with minimal shoot-through risk at 300–500 kHz. |
Use Scenario: Centralized 24 V distribution with branch circuit protection in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: Load switch providing controlled power enable/disable and overcurrent fault response. Use Value: 36 A avalanche current rating and 64.8 mJ EAS allow safe clamping of inductive kickback from solenoid and relay loads without external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | 40 V VDS, 4 mΩ RDS(on) @ 10 V, TO-220 package, higher RthJA (62 °C/W) | Larger footprint, lower current density, less suitable for compact OR-ing layouts | Prefer SUM90N03-2M2P-E3 where board space, thermal performance, and 30 V system voltage are prioritized. |
| SUP90N03-4M3P-E3 | Same family, 30 V, but 4.3 mΩ RDS(on) @ 10 V, lower Qg (42 nC), TO-263 package | Higher on-resistance trades off conduction loss for faster switching in low-current, high-frequency apps | Choose SUM90N03-2M2P-E3 when minimizing conduction loss dominates; choose SUP90N03-4M3P-E3 when gate drive power or switching loss is critical. |
Compared with IRF1404PBF and SUP90N03-4M3P-E3, SUM90N03-2M2P-E3 delivers the lowest RDS(on) in its voltage class with TO-263 thermal performance, making it optimal for high-current, space-constrained server and industrial power rails where efficiency and thermal headroom are design-critical.
Availability
SUM90N03-2M2P-E3 is available at Aetrix Electronics and suitable for server OR-ing, hot-swap power modules, and industrial 24 V distribution systems requiring stable component supply, long-term lifecycle assurance, and traceable Pb-free sourcing.
Supply support for SUM90N03-2M2P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.
SUM90N03-2M2P-E3 belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-current, low-voltage DC power distribution in datacenter infrastructure and enterprise equipment.
FAQ
What is the maximum continuous drain current rating for SUM90N03-2M2P-E3 under real-world PCB conditions?
The SUM90N03-2M2P-E3 is rated for 90 A continuous drain current at TC = 25 °C with proper heatsinking. On a standard 1" × 1" FR4 board, ambient-limited current drops to 33 A at TA = 25 °C. For sustained 90 A operation, the device must be mounted to a low-thermal-resistance heatsink or large copper plane to maintain TC ≤ 25 °C - verified by its 0.5 °C/W typical RthJC.
Does SUM90N03-2M2P-E3 support logic-level gate drive?
Yes, SUM90N03-2M2P-E3 supports logic-level gate drive with a guaranteed VGS(th) range of 1.5–2.5 V and full enhancement at VGS = 4.5 V (RDS(on) = 2.7 mΩ). It interfaces directly with 3.3 V microcontrollers and hot-swap controllers without level-shifting, while maintaining robust noise immunity due to its ±20 V VGS rating.
How does the body diode performance of SUM90N03-2M2P-E3 impact reverse-recovery behavior in synchronous rectifier applications?
SUM90N03-2M2P-E3 features a fast, low-loss body diode with trr = 52–78 ns and Qrr = 70–105 nC at IF = 20 A. This enables efficient commutation in synchronous rectifier topologies up to 500 kHz, reducing switching loss and EMI compared to standard MOSFETs - confirmed by measured 0.8–1.2 V VSD at IS = 22 A and low reverse recovery fall time (ta = 27 ns).
Is SUM90N03-2M2P-E3 suitable for avalanche-rated operation in inductive load switching?
Yes, SUM90N03-2M2P-E3 is fully characterized for avalanche operation: IAS = 36 A and EAS = 64.8 mJ (single pulse). These values are production-tested per Vishay's 100 % UIS test, making it appropriate for unclamped inductive switching in 24 V solenoid drivers and relay interfaces where external snubbers would otherwise be required.
What thermal interface requirements apply when mounting SUM90N03-2M2P-E3 to a heatsink?
SUM90N03-2M2P-E3 uses the TO-263 (D2PAK) package with an exposed drain tab that serves as both thermal and electrical connection. For optimal RthJC performance (0.5 °C/W typ.), use a flat, smooth heatsink surface with thermal interface material (TIM) rated ≥ 3 W/m·K and mounting pressure ≥ 35 psi. Avoid solder-only attachment - mechanical clamping or screw-down is recommended to maintain consistent thermal contact.
SUM90N03-2M2P-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 257 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12065 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.75W (Ta), 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SUM90N03-2M2P-E3 FAQ
1.How can I place an order for SUM90N03-2M2P-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SUM90N03-2M2P-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SUM90N03-2M2P-E3 reliable?
The price and inventory of SUM90N03-2M2P-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUM90N03-2M2P-E3 is usually 5 days.
3.What payment methods are accepted for SUM90N03-2M2P-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUM90N03-2M2P-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SUM90N03-2M2P-E3?
SUM90N03-2M2P-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SUM90N03-2M2P-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SUM90N03-2M2P-E3?
For technical support, including SUM90N03-2M2P-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUM90N03-2M2P-E3 requirements.
6.How does Aetrix verify that SUM90N03-2M2P-E3 is sourced from the original manufacturer or authorized distributors?
All SUM90N03-2M2P-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUM90N03-2M2P-E3 meets industry standards.
7.What is the process for return or replacement of SUM90N03-2M2P-E3?
All SUM90N03-2M2P-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUM90N03-2M2P-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SUM90N03-2M2P-E3 part is unused and in its original packaging.
Return procedure for SUM90N03-2M2P-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SUM90N03-2M2P-E3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
