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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP50010E-GE3

Name: SUP50010E-GE3
Brand: Vishay Siliconix
SKU: SUP50010E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP50010E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP50010E-GE3.pdf

Description:: MOSFET N-CH 60V 150A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SUP50010E-GE3 from Vishay Siliconix is an N-channel 60 V, 150 A (T_C = 25 °C), TO-220AB packaged power MOSFET with R_DS(on) of 2.0 mΩ at V_GS = 10 V and 2.5 mΩ at V_GS = 7.5 V, optimized for high-current synchronous rectification and motor drive switching in industrial power systems.

For engineers reviewing the SUP50010E-GE3 datasheet, SUP50010E-GE3 pinout, SUP50010E-GE3 application, or SUP50010E-GE3 equivalent, key selection criteria include its 175 °C maximum junction temperature, 141 nC total gate charge, 0.4 °C/W junction-to-case thermal resistance, and robust 180 mJ single-pulse avalanche energy rating - all critical for thermally constrained, high-reliability DC/DC and inverter designs.

Technical Context

This TrenchFET® MOSFET employs a planar trench-gate structure to minimize Q_gd (19.1 nC typ.) and reduce switching losses during Miller plateau transition. Its low R_DS(on) and high ID capability support continuous conduction mode operation in secondary-side synchronous rectifiers up to 150 A.

The device features 100 % R_g and UIS testing per production lot, with guaranteed avalanche ruggedness (IAS = 60 A, EAS = 180 mJ) and tight V_GS(th) range (2–4 V) enabling stable gate drive across temperature and process variation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 48 V bus and DC/AC inverter half-bridge topologies.
R_DS(on) @ V_GS = 10 V	2.0 mΩ max - Enables <1.5 W conduction loss at 150 A, critical for thermal management in compact power tools and motor drives.
Q_g	141 nC typ. - Determines gate driver power requirement and switching speed; lower than comparable 60 V/150 A MOSFETs by ~12 %.
T_J max	+175 °C - Allows sustained operation in sealed enclosures or high-ambient environments without derating below 125 °C case temperature.
R_thJC	0.4 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance; supports >300 W continuous dissipation at T_C = 100 °C.
E_AS	180 mJ - Withstands repetitive inductive turn-off transients in motor control and OR-ing applications without failure.

Pinout & Package

Package: TO-220AB - Through-hole, single-ended, isolated tab (drain-connected), 3-pin configuration with industry-standard footprint and heatsinking capability via mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main current path output / heatsink connection	Internally bonded to metal tab; electrically and thermally coupled to heatsink - requires isolation washer if heatsink is grounded.
G (Gate)	Control input for channel modulation	High-impedance MOS gate requiring <2.4 Ω series resistance to damp ringing; sensitive to ESD (±20 V absolute max).
S (Source)	Reference node for gate drive and current return	Low-inductance source path essential for minimizing V_GS noise during fast switching; ties to power ground plane in PCB layout.

Key Features

Feature	Design Value
TrenchFET® architecture	Reduces Q_gd to 19.1 nC, cutting Miller-induced switching loss by ≥25 % vs. planar MOSFETs in hard-switched converters.
100 % R_g and UIS tested	Ensures gate resistance consistency (<0.24–2.4 Ω) and single-pulse avalanche survival across full production lot - no screening required.
175 °C rated junction	Permits full-rated current delivery at ambient temperatures up to 105 °C when mounted on 1"×1" FR4 PCB with 2 oz copper.
Low C_iss/C_oss ratio	C_iss = 10,895 pF, C_oss = 2420 pF - Supports ZVS operation in resonant topologies and improves efficiency in LLC converters.

Applications

Secondary Synchronous Rectification	Motor Drive Switch
Use Scenario: High-efficiency 48 V to 12 V DC/DC converter in telecom power supply with 95 % peak efficiency target. IC Role / Device Role / Timing Role: Primary-side switch replacement in active clamp forward or LLC secondary-side synchronous rectifier. Use Value: 2.0 mΩ R_DS(on) cuts conduction loss by 38 % vs. Schottky diode solution, enabling 150 A output at <1.5 °C/W thermal rise.	Use Scenario: 3-phase inverter stage in cordless power tool battery pack (18–60 V nominal). IC Role / Device Role / Timing Role: Low-side switching element in H-bridge driving brushed DC or BLDC motor windings. Use Value: 180 mJ E_AS withstands commutation spikes during abrupt load disconnection, eliminating need for external snubbers.
Battery Management System (BMS)	OR-ing / e-Fuse
Use Scenario: Cell balancing and protection circuitry in 16S Li-ion battery pack for EV auxiliary systems. IC Role / Device Role / Timing Role: High-current discharge path switch activated during overvoltage or overtemperature fault conditions. Use Value: 150 A continuous rating at T_C = 70 °C enables single-device current handling for 200 A peak load surges without parallel devices.	Use Scenario: Redundant 48 V power rail OR-ing in server backplane with hot-swap capability. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with fast turn-off for fault isolation and reverse-current prevention. Use Value: 0.8–1.5 V V_SD body diode forward drop ensures low-loss reverse conduction during switchover, reducing heat generation by 40 % vs. discrete diode solutions.

Secondary Synchronous Rectification

Motor Drive Switch

Use Scenario: High-efficiency 48 V to 12 V DC/DC converter in telecom power supply with 95 % peak efficiency target.

IC Role / Device Role / Timing Role: Primary-side switch replacement in active clamp forward or LLC secondary-side synchronous rectifier.

Use Value: 2.0 mΩ R_DS(on) cuts conduction loss by 38 % vs. Schottky diode solution, enabling 150 A output at <1.5 °C/W thermal rise.

Use Scenario: 3-phase inverter stage in cordless power tool battery pack (18–60 V nominal).

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge driving brushed DC or BLDC motor windings.

Use Value: 180 mJ E_AS withstands commutation spikes during abrupt load disconnection, eliminating need for external snubbers.

Battery Management System (BMS)

OR-ing / e-Fuse

Use Scenario: Cell balancing and protection circuitry in 16S Li-ion battery pack for EV auxiliary systems.

IC Role / Device Role / Timing Role: High-current discharge path switch activated during overvoltage or overtemperature fault conditions.

Use Value: 150 A continuous rating at T_C = 70 °C enables single-device current handling for 200 A peak load surges without parallel devices.

Use Scenario: Redundant 48 V power rail OR-ing in server backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Bidirectional current-blocking switch with fast turn-off for fault isolation and reverse-current prevention.

Use Value: 0.8–1.5 V V_SD body diode forward drop ensures low-loss reverse conduction during switchover, reducing heat generation by 40 % vs. discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 165 nC; TO-220 package; no 100 % UIS test specified	Higher conduction loss (+60 %) and slower switching limit use in high-frequency (>100 kHz) DC/DC converters	Acceptable for cost-sensitive, lower-frequency motor drives where thermal margin exists
STP150N6F6	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 132 nC; TO-220FP package (full-pack); 175 °C rated	Lower R_DS(on) but limited to 125 A continuous; smaller package reduces heatsink area but increases thermal density	Preferred for space-constrained BMS modules where footprint reduction outweighs current derating needs

Compared with IRFB4115PBF and STP150N6F6, the SUP50010E-GE3 delivers optimal balance of ultra-low R_DS(on), proven avalanche ruggedness, and industry-standard TO-220AB mechanical compatibility - making it the preferred choice for high-reliability, high-current industrial inverters and synchronous rectifiers where thermal headroom and transient immunity are non-negotiable.

Availability

SUP50010E-GE3 is available at Aetrix Electronics and suitable for power tools, motor drives, and battery management systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for SUP50010E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability for industrial and automotive applications.

The SUP50010E-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-current, high-temperature switching in power conversion, motor control, and energy storage systems.

FAQ

What is the maximum continuous drain current rating for SUP50010E-GE3 at 125 °C case temperature?

The SUP50010E-GE3 is rated for 150 A continuous drain current at T_C = 25 °C and T_C = 70 °C, but derates to 125 W maximum power dissipation at T_C = 125 °C. Using R_DS(on) = 2.0 mΩ, this corresponds to approximately 112 A continuous at T_C = 125 °C under ideal heatsinking conditions - confirmed by the SOA curve in the official datasheet (S18-1019-Rev. A).

Does SUP50010E-GE3 have a built-in body diode, and what are its key characteristics?

Yes, the SUP50010E-GE3 integrates a parasitic body diode with V_SD = 0.8–1.5 V at I_F = 10 A and T_J = 25 °C, t_rr = 75–150 ns, and Q_rr = 0.12–0.24 μC. These parameters enable efficient freewheeling in motor drive and OR-ing applications, though external Schottky diodes may be added for ultra-low-loss requirements.

Is SUP50010E-GE3 RoHS-compliant and halogen-free?

Yes, SUP50010E-GE3 is lead (Pb)-free and halogen-free per Vishay's material categorization standard (document #99912). The "-GE3" suffix explicitly denotes compliance with JEDEC JS709B and RoHS Directive 2011/65/EU, including exemption 7a for lead in high-melting-temperature solder alloys.

What is the gate threshold voltage range for SUP50010E-GE3, and how does it vary with temperature?

The SUP50010E-GE3 has a V_GS(th) range of 2.0–4.0 V at T_J = 25 °C, with typical negative temperature coefficient: it decreases to ~1.3–3.2 V at T_J = 175 °C (per Figure 10 in datasheet S18-1019). This ensures stable turn-on behavior across full operating range without unintended conduction at high temperature.

Can SUP50010E-GE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, SUP50010E-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for 180 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This makes it suitable for inductive load switching in motor drives and DC/AC inverters where voltage spikes exceed V_DS rating, provided pulse width remains ≤300 μs and duty cycle ≤2 %.

SUP50010E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 212 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10895 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP50010E-GE3 FAQ

1.How can I place an order for SUP50010E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP50010E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP50010E-GE3 reliable?

The price and inventory of SUP50010E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP50010E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP50010E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP50010E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP50010E-GE3?

SUP50010E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP50010E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP50010E-GE3?

For technical support, including SUP50010E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP50010E-GE3 requirements.

6.How does Aetrix verify that SUP50010E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP50010E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP50010E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP50010E-GE3?

All SUP50010E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP50010E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP50010E-GE3 part is unused and in its original packaging.

Return procedure for SUP50010E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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