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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP60N06-12P-GE3

Name: SUP60N06-12P-GE3
Brand: Vishay Siliconix
SKU: SUP60N06-12P-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP60N06-12P-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP60N06-12P-GE3.pdf

Description:: MOSFET N-CH 60V 60A TO220AB

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Product details

Overview

SUP60N06-12P-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 60 A continuous drain current (package-limited), and 12.0 mΩ typical R_DS(on) at V_GS = 10 V. It features 100 % UIS and R_g tested reliability, halogen-free and RoHS-compliant construction, and is optimized for synchronous rectification in high-efficiency DC/DC converters.

For engineers reviewing the SUP60N06-12P-GE3 datasheet, SUP60N06-12P-GE3 pinout, SUP60N06-12P-GE3 application, or SUP60N06-12P-GE3 equivalent, key selection criteria include its 1.25 °C/W junction-to-case thermal resistance, 33 nC total gate charge, 1970 pF input capacitance, and TO-220AB package suitability for industrial power supply thermal management.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching performance. Its dynamic parameters-33 nC Q_g, 110 pF C_rss, and 11–20 ns turn-on delay-support high-frequency operation up to 500 kHz in hard-switched topologies.

The device integrates a robust body diode with 40–80 ns reverse recovery time and 64–120 nC Q_rr, enabling reliable synchronous rectification without external Schottky diodes. Thermal design is anchored by R_thJC = 1.25 °C/W and R_thJA = 40 °C/W (PCB mount), validated under 1" FR-4 board conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V input systems and 12 V/24 V output rails.
R_DS(on) @ V_GS = 10 V	0.012 Ω - Enables <1.2 W conduction loss at 10 A, critical for thermally constrained power stages.
I_D (continuous)	60 A - Package-limited rating requiring heatsinking above ~25 °C case temperature per derating curve.
Q_g (total)	33 nC - Determines gate driver power requirement and switching loss in PWM control circuits.
C_iss	1970 pF - Impacts gate drive loop stability and EMI filtering needs in high-dV/dt environments.
R_thJC	1.25 °C/W - Defines minimum heatsink interface thermal resistance needed to maintain T_J ≤ 150 °C.
E_AS	80 mJ - Specifies single-pulse avalanche energy handling capability for inductive load protection.

Pinout & Package

Package: TO-220AB (3-lead, through-hole, isolated tab). Tab is electrically connected to the drain terminal and must be insulated from chassis ground unless drain is referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control electrode; requires 2.5–4.5 V threshold and ≤1.4 Ω internal gate resistance for stable drive.
D	Drain	Main power output node; connected to MOSFET tab; carries full load current and withstands 60 V transients.
S	Source	Reference node for gate drive; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.012 Ω R_DS(on) at 10 V drive while maintaining ruggedness against repetitive avalanche stress.
100 % UIS tested	Guarantees 80 mJ single-pulse avalanche energy handling across production lot, eliminating need for external snubbers.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 definition and EU Directive 2002/95/EC, supporting green manufacturing and end-of-life compliance.
Low Q_gd/Q_g ratio	9/33 = 0.27 - Reduces Miller-induced switching oscillation and improves hard-switching noise immunity.
Body diode t_rr	40–80 ns - Enables efficient synchronous rectification in buck converters without external diode replacement.

Applications

Server VRM Synchronous Rectifier	Industrial DC/DC Converter
Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion in CPU voltage regulator modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses. Use Value: 0.012 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency by 1.2–1.8 %.	Use Scenario: 48 V input to 24 V/12 V isolated or non-isolated step-down in factory automation power supplies. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in hard-switched flyback or forward converters. Use Value: 60 A continuous rating and 1.25 °C/W R_thJC support 200 W+ output with minimal heatsink volume.
Telecom AC/DC Front-End	Renewable Energy Inverter Stage
Use Scenario: PFC boost switch or LLC resonant converter half-bridge leg in telecom rectifiers (−48 V systems). IC Role / Device Role / Timing Role: High-duty-cycle switching element operating at 100–300 kHz with low Q_g. Use Value: 33 nC Q_g enables use with standard 1 A gate drivers, reducing driver BOM cost and layout complexity.	Use Scenario: DC link switching in solar microinverters or battery storage bidirectional converters. IC Role / Device Role / Timing Role: Unidirectional power switch in DC/AC H-bridge or bidirectional switch in DC/DC isolation stage. Use Value: 80 mJ E_AS rating supports safe operation during grid fault transients without clamping circuitry.

Server VRM Synchronous Rectifier

Industrial DC/DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion in CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses.

Use Value: 0.012 Ω R_DS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, improving full-load efficiency by 1.2–1.8 %.

Use Scenario: 48 V input to 24 V/12 V isolated or non-isolated step-down in factory automation power supplies.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in hard-switched flyback or forward converters.

Use Value: 60 A continuous rating and 1.25 °C/W R_thJC support 200 W+ output with minimal heatsink volume.

Telecom AC/DC Front-End

Renewable Energy Inverter Stage

Use Scenario: PFC boost switch or LLC resonant converter half-bridge leg in telecom rectifiers (−48 V systems).

IC Role / Device Role / Timing Role: High-duty-cycle switching element operating at 100–300 kHz with low Q_g.

Use Value: 33 nC Q_g enables use with standard 1 A gate drivers, reducing driver BOM cost and layout complexity.

Use Scenario: DC link switching in solar microinverters or battery storage bidirectional converters.

IC Role / Device Role / Timing Role: Unidirectional power switch in DC/AC H-bridge or bidirectional switch in DC/DC isolation stage.

Use Value: 80 mJ E_AS rating supports safe operation during grid fault transients without clamping circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06L	R_DS(on) = 0.014 Ω @ 10 V; Q_g = 45 nC; TO-220FP package (insulated flange)	Higher gate charge increases driver loss; insulated flange simplifies heatsink mounting but adds 0.5 mm height	Prefer when electrical isolation of drain from heatsink is mandatory and 12 % higher R_DS(on) is acceptable.
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V; Q_g = 67 nC; no UIS testing; legacy planar process	Lower avalanche ruggedness and higher conduction loss limit use to low-reliability consumer-grade designs	Select only for cost-sensitive, non-critical 24 V applications where 60 A rating is not required and thermal margin is ample.

Compared with STP60NF06L and IRFZ44NPBF, SUP60N06-12P-GE3 delivers superior thermal performance (1.25 °C/W vs. ≥1.5 °C/W), lower switching loss (33 nC vs. ≥45 nC), and guaranteed avalanche capability-making it optimal for industrial and telecom power stages demanding long-term reliability.

Availability

SUP60N06-12P-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom AC/DC front-ends requiring stable component supply, halogen-free compliance, and proven avalanche ruggedness.

Supply support for SUP60N06-12P-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SUP60N06-12P-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered specifically for high-current, high-frequency power conversion in computing, telecom, and industrial infrastructure.

FAQ

What is the maximum continuous drain current rating for SUP60N06-12P-GE3?

The SUP60N06-12P-GE3 has a continuous drain current rating of 60 A at T_C = 25 °C, limited by package thermal capacity-not silicon capability. At T_C = 70 °C, the rating drops to 54 A per the derating curve. This value assumes proper heatsinking and PCB copper area per Vishay's recommended layout guidelines in Document 69070.

Is SUP60N06-12P-GE3 suitable for synchronous rectification in a 500 kHz buck converter?

Yes, SUP60N06-12P-GE3 supports synchronous rectification at 500 kHz due to its 33 nC total gate charge, 110 pF reverse transfer capacitance, and 40–80 ns body diode reverse recovery time. Its low R_DS(on) minimizes conduction loss, while fast switching reduces transition loss-provided gate drive strength exceeds 1 A peak and layout minimizes parasitic inductance.

Does SUP60N06-12P-GE3 have a fully rated avalanche capability?

Yes, SUP60N06-12P-GE3 is 100 % UIS (unclamped inductive switching) tested per JEDEC JESD24-11, guaranteeing 80 mJ single-pulse avalanche energy at T_J = 25 °C. This rating is validated across production lots and enables robust operation in inductive switching applications without external protection components.

What is the gate threshold voltage range for SUP60N06-12P-GE3?

The gate threshold voltage (V_GS(th)) for SUP60N06-12P-GE3 is specified from 2.5 V to 4.5 V at I_D = 250 µA. This range ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers, while maintaining noise immunity against spurious turn-on in noisy power environments.

How does the halogen-free status of SUP60N06-12P-GE3 impact its compliance profile?

SUP60N06-12P-GE3 meets IEC 61249-2-21 halogen-free definition and RoHS Directive 2002/95/EC, meaning total bromine + chlorine content is <900 ppm and no intentionally added halogenated flame retardants are used. This supports WEEE compliance and e-waste recycling requirements without compromising thermal or electrical performance.

SUP60N06-12P-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1970 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 3.25W (Ta), 100W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP60N06-12P-GE3 FAQ

1.How can I place an order for SUP60N06-12P-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP60N06-12P-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP60N06-12P-GE3 reliable?

The price and inventory of SUP60N06-12P-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP60N06-12P-GE3 is usually 5 days.

3.What payment methods are accepted for SUP60N06-12P-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP60N06-12P-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP60N06-12P-GE3?

SUP60N06-12P-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP60N06-12P-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP60N06-12P-GE3?

For technical support, including SUP60N06-12P-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP60N06-12P-GE3 requirements.

6.How does Aetrix verify that SUP60N06-12P-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP60N06-12P-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP60N06-12P-GE3 meets industry standards.

7.What is the process for return or replacement of SUP60N06-12P-GE3?

All SUP60N06-12P-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP60N06-12P-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP60N06-12P-GE3 part is unused and in its original packaging.

Return procedure for SUP60N06-12P-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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