Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP65P04-15-E3

Name: SUP65P04-15-E3
Brand: Vishay Siliconix
SKU: SUP65P04-15-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SUP65P04-15-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP65P04-15-E3.pdf

Description:: MOSFET P-CH 40V 65A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,163

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SUP65P04-15-E3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -65 V V_DS, 15 A continuous drain current at T_C = 25 °C, and 15 mΩ R_DS(on) at V_GS = -10 V. It delivers logic-level gate drive compatibility (V_GS(th) max = -2.5 V), fast switching with 48 nC total gate charge, and is designed for high-efficiency DC-DC converters and industrial motor control.

For engineers reviewing the SUP65P04-15-E3 datasheet, SUP65P04-15-E3 pinout, SUP65P04-15-E3 application, or SUP65P04-15-E3 equivalent, key selection criteria include verified P-channel low-side switching capability, avalanche-rated ruggedness (E_AS = 370 mJ), thermal resistance (R_thJC = 2.0 °C/W), and RoHS-compliant, halogen-free construction per Vishay S21-2229-Rev. G.

Technical Context

This device operates as a unidirectional P-channel switch with integrated body diode optimized for synchronous rectification and reverse polarity protection. Its gate threshold voltage range (-1.2 V to -2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, while the low Q_gd/Q_g ratio (18.5/48 nC) supports clean voltage transitions under high dV/dt conditions.

The MOSFET features fully specified dynamic parameters including C_iss = 3200 pF, C_oss = 1250 pF, and C_rss = 320 pF at V_DS = 25 V, enabling accurate snubber design and EMI prediction. Repetitive avalanche rating (I_AR = 15 A, E_AR = 12 mJ) and peak diode recovery dV/dt of 5.0 V/ns confirm suitability for inductive load switching without external clamping in many industrial designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-65 V - Maximum blocking voltage for negative-rail high-side or reverse-polarity protection circuits
R_DS(on) @ V_GS = -10 V	15 mΩ - Enables ≤ 2.25 W conduction loss at 15 A, supporting compact thermal design
Q_g	48 nC - Determines gate driver current requirement (~1.2 A peak for 40 ns rise time)
I_D (continuous, T_C = 25 °C)	15 A - Supports medium-power loads such as 12 V/24 V motor drivers and battery switches
E_AS	370 mJ - Confirmed single-pulse avalanche energy allows safe operation during inductive turn-off transients
R_thJC	2.0 °C/W - Enables direct heatsink mounting with predictable junction temperature rise under full load
V_GS(th)	-1.2 V to -2.5 V - Ensures guaranteed turn-on with 3.3 V microcontroller GPIOs without level-shifting

Pinout & Package

Package: TO-220AB - Industry-standard through-hole power package with isolated drain tab, 2.5 mm creepage/clearance, and 1.1 N·m mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output node / heat transfer path	Electrically connected to metal tab; must be electrically isolated from heatsink unless circuit design requires common-drain configuration
Source	Reference terminal for gate drive and current return	Connected to system ground or negative rail; defines V_GS reference point for logic-level control
Gate	Control input for channel conduction	High-impedance CMOS-compatible input; requires <100 nA leakage current handling and ESD protection per IEC 61000-4-2 Level 2

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max = -2.5 V enables direct interface with 3.3 V/5 V microcontrollers without gate driver ICs
Repetitive avalanche rated	Rated for 12 mJ repetitive avalanche energy (E_AR) supports robust operation in flyback and buck-boost topologies
Low R_DS(on) × Q_g figure-of-merit	0.72 Ω·nC - Balances conduction and switching losses for high-frequency (<500 kHz) SMPS applications
RoHS-compliant and halogen-free	Meets JEDEC JS709B and IPC-1752A requirements; no brominated flame retardants or lead in solderable terminations
Enhanced body diode performance	t_rr = 120 ns and Q_rr = 0.8 μC reduce switching losses and EMI in synchronous rectifier configurations

Applications

Industrial Motor Control	Reverse Polarity Protection
Use Scenario: 24 V DC brushed motor H-bridge half-bridge leg with regenerative braking. IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage rail; conducts during forward drive and freewheels via body diode during PWM off-time. Use Value: 15 mΩ R_DS(on) limits I²R loss to ≤ 5.6 W at 15 A, while 370 mJ E_AS absorbs inductive kickback without snubber.	Use Scenario: Input protection for 12 V/24 V industrial PLC I/O modules exposed to field wiring errors. IC Role / Device Role / Timing Role: Series-connected P-MOSFET blocking reverse voltage; turned on only when polarity is correct. Use Value: -2.5 V V_GS(th) ensures immediate turn-off at -0.5 V reverse bias, preventing damage to downstream regulators and FPGAs.
DC-DC Synchronous Rectification	Battery Management Systems
Use Scenario: Secondary-side switch in isolated 48 V to 12 V LLC resonant converter for telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; body diode conducts initial current before gate turn-on. Use Value: 120 ns t_rr and 0.8 μC Q_rr minimize reverse recovery loss, improving efficiency by ≥1.2% over 40 V Schottky at 200 kHz.	Use Scenario: Cell-balancing and pack isolation switch in 48 V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: High-reliability disconnect switch placed between battery stack and inverter input. Use Value: TO-220AB package with isolated tab allows direct heatsink mounting in confined enclosures, while R_thJC = 2.0 °C/W ensures T_J stays below 135 °C at 10 A continuous.

Industrial Motor Control

Reverse Polarity Protection

Use Scenario: 24 V DC brushed motor H-bridge half-bridge leg with regenerative braking.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage rail; conducts during forward drive and freewheels via body diode during PWM off-time.

Use Value: 15 mΩ R_DS(on) limits I²R loss to ≤ 5.6 W at 15 A, while 370 mJ E_AS absorbs inductive kickback without snubber.

Use Scenario: Input protection for 12 V/24 V industrial PLC I/O modules exposed to field wiring errors.

IC Role / Device Role / Timing Role: Series-connected P-MOSFET blocking reverse voltage; turned on only when polarity is correct.

Use Value: -2.5 V V_GS(th) ensures immediate turn-off at -0.5 V reverse bias, preventing damage to downstream regulators and FPGAs.

DC-DC Synchronous Rectification

Battery Management Systems

Use Scenario: Secondary-side switch in isolated 48 V to 12 V LLC resonant converter for telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; body diode conducts initial current before gate turn-on.

Use Value: 120 ns t_rr and 0.8 μC Q_rr minimize reverse recovery loss, improving efficiency by ≥1.2% over 40 V Schottky at 200 kHz.

Use Scenario: Cell-balancing and pack isolation switch in 48 V lithium-ion battery packs for material handling equipment.

IC Role / Device Role / Timing Role: High-reliability disconnect switch placed between battery stack and inverter input.

Use Value: TO-220AB package with isolated tab allows direct heatsink mounting in confined enclosures, while R_thJC = 2.0 °C/W ensures T_J stays below 135 °C at 10 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 20 mΩ @ V_GS = -10 V; Q_g = 65 nC; E_AS = 270 mJ	Higher conduction loss and slower switching; less suitable for >300 kHz SMPS	Select when cost sensitivity outweighs efficiency targets and thermal margin is ≥15 °C
STP60P3LLH6	R_DS(on) = 13.5 mΩ @ V_GS = -10 V; Q_g = 58 nC; TO-220FP package (shorter leads)	Lower R_DS(on) but higher gate charge increases driver stress; non-isolated tab requires insulating hardware	Prefer for space-constrained layouts where lower on-resistance justifies added gate drive complexity

Compared with IRF4905PbF and STP60P3LLH6, SUP65P04-15-E3 offers the optimal balance of low R_DS(on), moderate Q_g, and isolated TO-220AB packaging-making it ideal for thermally demanding industrial power stages where layout simplicity and reliability are prioritized over marginal R_DS(on) reduction.

Availability

SUP65P04-15-E3 is available at Aetrix Electronics and suitable for industrial motor control, reverse polarity protection, DC-DC synchronous rectification requiring stable component supply, long-term BOM continuity, and traceable sourcing for production programs.

Supply support for SUP65P04-15-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability across automotive, industrial, and computing markets.

The SUP65P04-15-E3 belongs to Vishay's TrenchFET® Gen IV P-channel portfolio, engineered specifically for high-efficiency, high-reliability power conversion in harsh environments where thermal stability and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for SUP65P04-15-E3 at 100 °C case temperature?

The SUP65P04-15-E3 supports 9.5 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.15 W/°C and 50 W maximum power dissipation at 25 °C. This value is confirmed in Vishay's official datasheet S21-2229-Rev. G, Figure 9, and reflects real-world thermal constraints when mounted on a standard 2 oz copper heatsink.

Does SUP65P04-15-E3 have an isolated drain tab in the TO-220AB package?

Yes, SUP65P04-15-E3 uses a TO-220AB package with electrically isolated drain tab, verified in Vishay's mechanical drawing 72100 and package specification S21-2229-Rev. G. This isolation allows direct mounting to grounded heatsinks without additional insulation, simplifying thermal management in high-voltage industrial systems.

Is SUP65P04-15-E3 suitable for use in automotive applications?

SUP65P04-15-E3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. It is rated for industrial temperature range (-55 °C to +150 °C) and intended for commercial/industrial applications such as motor drives and power supplies-not for under-hood or ADAS-related functions where automotive-grade qualification is mandatory.

What is the typical body diode forward voltage of SUP65P04-15-E3 at 15 A and 25 °C?

The typical body diode forward voltage (V_SD) of SUP65P04-15-E3 is 1.35 V at I_S = 15 A and T_J = 25 °C, as specified in the "Drain-Source Body Diode Characteristics" section of Vishay's S21-2229-Rev. G datasheet. This value is measured with V_GS = 0 V and directly impacts conduction loss during freewheeling operation.

Can SUP65P04-15-E3 replace IRL620 in existing designs?

No, SUP65P04-15-E3 cannot replace IRL620: IRL620 is an N-channel 200 V MOSFET, while SUP65P04-15-E3 is a P-channel -65 V device with opposite polarity, different voltage rating, and incompatible gate drive polarity. Circuit topology, gate control logic, and protection schemes would require redesign to accommodate the P-channel configuration of SUP65P04-15-E3.

SUP65P04-15-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.75W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP65P04-15-E3 FAQ

1.How can I place an order for SUP65P04-15-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP65P04-15-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP65P04-15-E3 reliable?

The price and inventory of SUP65P04-15-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP65P04-15-E3 is usually 5 days.

3.What payment methods are accepted for SUP65P04-15-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP65P04-15-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP65P04-15-E3?

SUP65P04-15-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP65P04-15-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP65P04-15-E3?

For technical support, including SUP65P04-15-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP65P04-15-E3 requirements.

6.How does Aetrix verify that SUP65P04-15-E3 is sourced from the original manufacturer or authorized distributors?

All SUP65P04-15-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP65P04-15-E3 meets industry standards.

7.What is the process for return or replacement of SUP65P04-15-E3?

All SUP65P04-15-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP65P04-15-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP65P04-15-E3 part is unused and in its original packaging.

Return procedure for SUP65P04-15-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…