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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SUP70090E-GE3

Name: SUP70090E-GE3
Brand: Vishay Siliconix
SKU: SUP70090E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SUP70090E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SUP70090E-GE3.pdf

Description:: MOSFET N-CH 100V 50A TO220AB

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Product details

Overview

SUP70090E-GE3 from Vishay Siliconix is an N-channel 100 V, 50 A TO-220AB power MOSFET optimized for high-efficiency switching in DC/DC converters and motor drive applications, featuring 7.5 mΩ R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the SUP70090E-GE3 datasheet, SUP70090E-GE3 pinout, SUP70090E-GE3 application, or SUP70090E-GE3 equivalent, key selection criteria include its low Q_gd/Q_gs ratio (<1) for reduced switching loss, 100 % R_g and UIS testing for reliability, and lead-free/halogen-free compliance per Vishay's material categorization standard.

Technical Context

This device implements a planar silicon process with ThunderFET® architecture to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (2–4 V) enables compatibility with 5 V and 10 V gate drivers, while the 1.2 °C/W R_thJC supports high-power thermal management when mounted on heatsinks.

The MOSFET integrates a body diode with 0.8–1.5 V forward voltage at 10 A and 77–116 ns reverse recovery time, making it suitable for synchronous rectification where diode conduction and recovery behavior directly impact efficiency. Avalanche energy rating of 80 mJ (L = 0.1 mH) confirms ruggedness under inductive load transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V input DC/DC and motor drive bus rails.
R_DS(on) max	7.4 mΩ at V_GS = 10 V, I_D = 20 A - Enables <1 W conduction loss at 50 A continuous current with proper heatsinking.
Q_g	33 nC typical - Low gate charge reduces driver power requirement and enables efficient operation at 100–500 kHz switching frequencies.
I_D continuous	50 A at T_C = 25 °C - Rated for sustained high-current loads when case temperature is actively managed.
T_J max	175 °C - Supports operation in harsh environments such as power tools and industrial inverters without derating below ambient.
E_AS	80 mJ - Withstands single-pulse inductive energy events common in motor commutation and relay driving.

Pinout & Package

Package: TO-220AB - Through-hole, single-ended heat-transfer package with isolated tab (drain-connected), rated for 125 W maximum power dissipation at T_C = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–20 V gate drive; threshold voltage 2–4 V ensures reliable turn-on with standard logic-level drivers.
D (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits drain-referenced mounting.
S (Source)	Power return/reference node	Serves as local ground reference for gate drive; source inductance must be minimized to avoid ringing during fast switching.

Key Features

Feature	Design Value
ThunderFET® architecture	Optimized cell layout delivering 7.4 mΩ R_DS(on) and 1950 pF C_iss for balanced conduction and switching performance.
Q_gd/Q_gs < 1	Reduces Miller plateau duration and improves controllability during hard-switching transitions, lowering E_on and E_off.
100 % R_g tested	Ensures gate resistance between 0.7–7 Ω, critical for predictable gate drive timing and EMI control in high-frequency designs.
100 % UIS tested	Validates unclamped inductive switching robustness across production lots, eliminating need for external snubbers in motor drive stages.

Applications

Secondary Synchronous Rectification	Brushless DC Motor Drive
Use Scenario: Used as low-side switch in LLC resonant converter secondary side to replace Schottky diodes. IC Role / Device Role / Timing Role: Power MOSFET acting as synchronous rectifier, conducting during freewheeling phase with gate driven by transformer-coupled or controller-synchronized signal. Use Value: Reduces conduction loss by >40 % vs. 100 V Schottky diode, improving full-load efficiency from 92 % to 94.5 % in 48 V output server PSUs.	Use Scenario: High-current half-bridge low-side switch in 18–36 V cordless power tool motor controllers. IC Role / Device Role / Timing Role: N-channel MOSFET in 3-phase inverter leg, switched at 20–40 kHz with PWM to regulate torque and speed. Use Value: 50 A continuous rating and 175 °C T_J enable 30 s peak burst current handling without thermal shutdown during stall conditions.
Industrial DC/AC Inverter	High-Power DC/DC Converter
Use Scenario: Output stage switch in 1 kW solar microinverter converting 40–60 V DC to 230 V AC. IC Role / Device Role / Timing Role: Hard-switched inverter switch operating in 50 Hz fundamental with high-frequency PWM carrier (16–20 kHz). Use Value: 80 mJ E_AS rating withstands inductive kickback from line-filter chokes during fault clearing, avoiding destructive avalanche failure.	Use Scenario: Primary-side high-side switch in isolated 12 V → 48 V bidirectional DC/DC for telecom energy storage systems. IC Role / Device Role / Timing Role: Main power switch in phase-shifted full-bridge topology, requiring low C_oss (845 pF) and controlled Q_gd for ZVS transition. Use Value: 54 pF Crss minimizes capacitive coupling during dead-time, reducing shoot-through risk and improving ZVS window margin at 200 kHz.

Secondary Synchronous Rectification

Brushless DC Motor Drive

Use Scenario: Used as low-side switch in LLC resonant converter secondary side to replace Schottky diodes.

IC Role / Device Role / Timing Role: Power MOSFET acting as synchronous rectifier, conducting during freewheeling phase with gate driven by transformer-coupled or controller-synchronized signal.

Use Value: Reduces conduction loss by >40 % vs. 100 V Schottky diode, improving full-load efficiency from 92 % to 94.5 % in 48 V output server PSUs.

Use Scenario: High-current half-bridge low-side switch in 18–36 V cordless power tool motor controllers.

IC Role / Device Role / Timing Role: N-channel MOSFET in 3-phase inverter leg, switched at 20–40 kHz with PWM to regulate torque and speed.

Use Value: 50 A continuous rating and 175 °C T_J enable 30 s peak burst current handling without thermal shutdown during stall conditions.

Industrial DC/AC Inverter

High-Power DC/DC Converter

Use Scenario: Output stage switch in 1 kW solar microinverter converting 40–60 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched inverter switch operating in 50 Hz fundamental with high-frequency PWM carrier (16–20 kHz).

Use Value: 80 mJ E_AS rating withstands inductive kickback from line-filter chokes during fault clearing, avoiding destructive avalanche failure.

Use Scenario: Primary-side high-side switch in isolated 12 V → 48 V bidirectional DC/DC for telecom energy storage systems.

IC Role / Device Role / Timing Role: Main power switch in phase-shifted full-bridge topology, requiring low C_oss (845 pF) and controlled Q_gd for ZVS transition.

Use Value: 54 pF Crss minimizes capacitive coupling during dead-time, reducing shoot-through risk and improving ZVS window margin at 200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V (5× higher), Q_g = 71 nC (2.1× higher), TO-220AB package, same pinout.	Lower efficiency and higher gate drive loss; suitable only for <100 kHz, low-duty-cycle applications.	Select IRF540NPBF only if cost sensitivity outweighs efficiency targets and thermal headroom is ample.
STP110N10F7	R_DS(on) = 7.2 mΩ @ 10 V (comparable), Q_g = 42 nC (27 % higher), same TO-220AB, but no UIS testing specified.	Lacks production-level UIS validation; requires additional overvoltage clamping in inductive switching circuits.	Choose STP110N10F7 only when gate charge tolerance is relaxed and avalanche stress is absent or externally mitigated.

Compared with IRF540NPBF and STP110N10F7, SUP70090E-GE3 delivers superior switching efficiency via lower Q_gd/Q_gs, guaranteed UIS robustness, and tighter R_DS(on) distribution-critical for volume production in motor drives and high-density power supplies.

Availability

SUP70090E-GE3 is available at Aetrix Electronics and suitable for power tools, DC/AC inverters, and high-current DC/DC converters requiring stable component supply, RoHS-compliant sourcing, and long-term industrial lifecycle support.

Supply support for SUP70090E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SUP70090E-GE3 belongs to Vishay's ThunderFET® power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in industrial motor control, renewable energy inverters, and server/telecom power supplies.

FAQ

What is the maximum continuous drain current rating for SUP70090E-GE3 at 70 °C case temperature?

The SUP70090E-GE3 supports 50 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating remains constant up to 150 °C junction temperature and is independent of operating temperature per datasheet note "c". Derating begins only above T_C = 70 °C due to package thermal limits.

Does SUP70090E-GE3 have a fully rated avalanche capability, and how is it validated?

Yes, SUP70090E-GE3 is 100 % UIS (unclamped inductive switching) tested per production lot, with a single-pulse avalanche energy rating of 80 mJ at L = 0.1 mH. This validation ensures robustness against inductive kickback in motor drive and relay switching applications without requiring external protection components.

What is the gate threshold voltage range for SUP70090E-GE3, and how does it affect gate drive design?

The gate threshold voltage (V_GS(th)) for SUP70090E-GE3 is 2–4 V at I_D = 250 μA. This allows reliable turn-on with 5 V logic-level drivers, but full enhancement (to achieve 7.4 mΩ R_DS(on)) requires ≥10 V gate drive. Designs using 3.3 V microcontrollers must add level-shifting or gate boosting.

Is SUP70090E-GE3 compatible with standard TO-220AB footprint and heatsinking methods?

Yes, SUP70090E-GE3 uses the industry-standard TO-220AB package with documented mechanical dimensions (Document 71195), including 3.54–3.94 mm mounting hole diameter and 14.85–15.49 mm D dimension. The drain-connected tab requires electrical isolation from the heatsink unless system grounding scheme permits direct connection.

How does the Q_gd/Q_gs ratio of SUP70090E-GE3 improve switching performance?

SUP70090E-GE3 features Q_gd/Q_gs < 1, meaning gate-drain charge is less than gate-source charge. This reduces Miller plateau duration during turn-off, enabling faster, more controllable switching transitions and lower E_off losses-especially beneficial in hard-switched topologies like flyback and non-isolated buck converters.

SUP70090E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: ThunderFET®

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SUP70090E-GE3 FAQ

1.How can I place an order for SUP70090E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SUP70090E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SUP70090E-GE3 reliable?

The price and inventory of SUP70090E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SUP70090E-GE3 is usually 5 days.

3.What payment methods are accepted for SUP70090E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SUP70090E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SUP70090E-GE3?

SUP70090E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SUP70090E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SUP70090E-GE3?

For technical support, including SUP70090E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SUP70090E-GE3 requirements.

6.How does Aetrix verify that SUP70090E-GE3 is sourced from the original manufacturer or authorized distributors?

All SUP70090E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SUP70090E-GE3 meets industry standards.

7.What is the process for return or replacement of SUP70090E-GE3?

All SUP70090E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SUP70090E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SUP70090E-GE3 part is unused and in its original packaging.

Return procedure for SUP70090E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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