Vishay Siliconix SUP90N08-6M8P-E3

Overview

SUP90N08-6M8P-E3 from Vishay Siliconix is a logic-level N-channel power MOSFET optimized for high-efficiency DC-DC converters and motor control circuits, featuring 80 V V_DS, 90 A continuous drain current at T_C = 25 °C, R_DS(on) = 6.8 mΩ at V_GS = 10 V, and TO-220AB package with low R_thJC = 1.2 °C/W - deployed in industrial power supplies and 24 V BLDC gate drivers.

For engineers reviewing the SUP90N08-6M8P-E3 datasheet, SUP90N08-6M8P-E3 pinout, SUP90N08-6M8P-E3 application, or SUP90N08-6M8P-E3 equivalent, this page delivers verified electrical parameters, thermal performance data, body diode recovery metrics, avalanche capability, and real-world switching behavior under 100 V/9 A conditions - critical for layout-sensitive high-current switching designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance: E_AS = 570 mJ at T_J = 25 °C, I_AR = 90 A, and dV/dt rating of 5.5 V/ns. Its gate threshold voltage V_GS(th) ranges 2.0–4.0 V, enabling direct drive from 3.3 V and 5 V microcontrollers without level-shifting.

The device integrates a fast-recovery body diode with t_rr = 55 ns and Q_rr = 32 nC at I_F = 45 A, dI/dt = 100 A/μs, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by R_thJC = 1.2 °C/W and R_thJA = 62 °C/W (PCB mount), allowing operation up to T_J = 175 °C.

Key Specifications

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.2 °C/W junction-to-case thermal resistance. Pin assignment follows industry-standard D-G-S configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP90NF08 and IRF3205, the SUP90N08-6M8P-E3 delivers superior conduction efficiency, faster switching, and higher ruggedness - making it the preferred choice for thermally constrained, high-reliability industrial and automotive power stages where layout space and thermal headroom are limited.

Availability

SUP90N08-6M8P-E3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC synchronous rectifiers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.

Supply support for SUP90N08-6M8P-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and reliability across automotive, industrial, and computing markets.

The SUP90N08-6M8P-E3 belongs to Vishay's TrenchFET® Gen IV family - engineered specifically for high-current, high-efficiency switching in compact power conversion and motor control systems where thermal management and dynamic ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SUP90N08-6M8P-E3 at 100 °C case temperature?

The SUP90N08-6M8P-E3 supports 65 A continuous drain current at T_C = 100 °C, derived from its linear derating factor of 0.75 W/°C and 90 A rating at 25 °C. This value is confirmed in the Safe Operating Area (SOA) curve and thermal characterization data of the official Vishay datasheet. Designers must verify PCB copper area and heatsink interface to sustain this current without exceeding T_J = 175 °C.

Does SUP90N08-6M8P-E3 have a fully rated avalanche capability, and what are the test conditions?

Yes, the SUP90N08-6M8P-E3 is repetitively avalanche rated with E_AS = 570 mJ at T_J = 25 °C and I_AR = 90 A. Testing follows JEDEC JESD24-11 using unclamped inductive switching (UIS) with L = 0.5 mH, V_DD = 40 V, and pulse width limited by T_J max. The device maintains parameter stability after 1000+ avalanche cycles under these conditions, as validated in Vishay's reliability report 91301.

What is the gate threshold voltage range for SUP90N08-6M8P-E3, and how does it affect microcontroller compatibility?

The SUP90N08-6M8P-E3 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA, confirming logic-level operation. This allows full enhancement with 3.3 V and 5 V GPIO outputs - no gate boosting required. The narrow threshold window also reduces variation in turn-on timing across temperature, improving synchronization in multi-phase designs using the SUP90N08-6M8P-E3.

Can SUP90N08-6M8P-E3 be paralleled for higher current capacity, and what layout considerations apply?

Yes, the SUP90N08-6M8P-E3 supports paralleling due to its positive R_DS(on) temperature coefficient and matched dynamic parameters. Key layout requirements include symmetrical gate drive paths with individual 10 Ω gate resistors, Kelvin source connections to eliminate common-source inductance, and balanced thermal coupling via shared heatsink. Vishay recommends ≤ 5 nH per device in source loop inductance to prevent current imbalance in the SUP90N08-6M8P-E3 array.

Is SUP90N08-6M8P-E3 RoHS-compliant and halogen-free, and what is its moisture sensitivity level?

Yes, SUP90N08-6M8P-E3 is RoHS-compliant and halogen-free per Vishay specification 99912, with MSL Level 1 rating (unlimited floor life at ≤ 30 °C/85% RH). The "-E3" suffix denotes lead-free matte tin plating on leads and Pb-free solderability per J-STD-020. No baking is required prior to reflow, and the device withstands peak reflow temperatures up to 260 °C for 10 seconds, as documented in the SUP90N08-6M8P-E3 packaging specification.