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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ

Name: TJ200F04M3L,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: TJ200F04M3L,LXHQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TJ200F04M3L,LXHQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: TJ200F04M3L,LXHQ.pdf

Description:: MOSFET P-CH 40V 200A TO220SM

Quantity:: RFQ Add To RFQ list

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Inventory:7,070

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Product details

Overview

TJ200F04M3L,LXHQ from Toshiba Electronic Devices & Storage Corporation is a silicon P-channel U-MOS power MOSFET designed for high-current switching in automotive and industrial power systems. It delivers R_DS(ON) = 1.45 mΩ (typ.) at V_GS = −10 V, supports −200 A DC drain current, and operates with V_DSS = −40 V - enabling efficient low-voltage DC-DC conversion and motor drive stages.

For engineers reviewing the TJ200F04M3L,LXHQ datasheet, TJ200F04M3L,LXHQ pinout, TJ200F04M3L,LXHQ application, or TJ200F04M3L,LXHQ equivalent, key selection criteria include its AEC-Q101 qualification, TO-220SM(W) package thermal performance (R_th(ch-c) = 0.4 °C/W), and verified avalanche ruggedness (E_AS = 924 mJ).

Technical Context

This P-channel MOSFET uses Toshiba's U-MOS trench-gate structure to achieve ultra-low on-resistance while maintaining robust safe operating area (SOA) and single-pulse avalanche capability. Its enhancement-mode threshold (V_th = −2.0 to −3.0 V) ensures reliable gate control under automotive supply variations, and integrated body diode supports synchronous rectification in buck converters.

The device features low Q_g = 460 nC (typ.) and fast switching (t_on = 29 ns, t_off = 1750 ns), optimized for high-frequency power stages up to 200 kHz. Its TO-220SM(W) package integrates a heatsink-connected drain terminal for direct thermal mounting, supporting continuous operation at T_ch ≤ 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−40 V - Maximum blocking voltage compatible with 24 V and 48 V automotive battery systems.
R_DS(ON)	1.45 mΩ (typ.) at V_GS = −10 V - Enables <1.5 W conduction loss at 100 A, reducing heatsink requirements.
I_D (DC)	−200 A - Supports high-power motor drivers and industrial DC-DC output stages without parallel devices.
E_AS	924 mJ - Confirmed single-pulse avalanche energy allows reliable operation during inductive load switching transients.
R_th(ch-c)	0.4 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for stable high-current operation.
V_th	−2.0 to −3.0 V - Ensures turn-on compatibility with standard −12 V gate drivers and avoids false triggering in noisy environments.
Q_g	460 nC (typ.) - Optimized for efficient gate driving in high-frequency PWM applications with moderate driver strength.

Pinout & Package

Package: TO-220SM(W) (Toshiba designation: 2-10W1S), surface-mount variant with insulated tab and heatsink-connected drain. Weight: 1.07 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring −10 V bias for full enhancement; sensitive to ESD (±1 µA leakage max).
2	Drain (heatsink)	Main current path and thermal interface - electrically connected to heatsink; must be isolated from PCB ground unless system design permits.
3	Source	Reference node for gate drive and current sensing; connects to high-side switch return or controller reference.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS testing per JESD22-A108.
Ultra-low R_DS(ON)	1.45 mΩ typ. enables >98% efficiency in 48 V/100 A buck converters at 100 kHz switching frequency.
Integrated body diode	V_DSF = 1.2 V (typ.) and Q_rr = 104 nC support synchronous rectification with controlled reverse recovery.
High avalanche ruggedness	924 mJ single-pulse energy rating protects against inductive kickback in motor drive and solenoid control.

Applications

Automotive Body Control Module	Industrial 48 V DC-DC Converter
Use Scenario: High-side power switch for headlight, HVAC blower, and seat heater control in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: P-channel high-side switch providing load isolation and short-circuit protection via current-sense feedback. Use Value: AEC-Q101 qualification and −200 A rating ensure long-term reliability under repeated cold-crank and load-dump conditions.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V bidirectional DC-DC converters for server power supplies. IC Role / Device Role / Timing Role: Low-R_DS(ON) P-channel MOSFET used in active clamp or synchronous rectification topology. Use Value: 1.45 mΩ R_DS(ON) reduces conduction loss by >40% vs. comparable 3.5 mΩ devices, improving full-load efficiency by 0.8–1.2%.
Electric Power Steering Motor Driver	High-Current Industrial Solenoid Controller
Use Scenario: Half-bridge high-side switch in EPS assist motor phase-legs, handling peak currents up to 180 A. IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET with t_off = 1750 ns, driven by isolated gate driver with negative turn-off bias. Use Value: Guaranteed SOA and 924 mJ avalanche energy prevent failure during motor stall or sudden direction reversal.	Use Scenario: High-side switch controlling 100–200 A solenoids in hydraulic valve manifolds and factory automation actuators. IC Role / Device Role / Timing Role: Robust power switch with low leakage (I_DSS ≤ −10 µA at −40 V) ensuring zero-power hold state stability. Use Value: TO-220SM(W) package enables direct bolt-down heatsinking, sustaining continuous 150 A operation at ambient ≤ 60 °C.

Automotive Body Control Module

Industrial 48 V DC-DC Converter

Use Scenario: High-side power switch for headlight, HVAC blower, and seat heater control in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: P-channel high-side switch providing load isolation and short-circuit protection via current-sense feedback.

Use Value: AEC-Q101 qualification and −200 A rating ensure long-term reliability under repeated cold-crank and load-dump conditions.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V bidirectional DC-DC converters for server power supplies.

IC Role / Device Role / Timing Role: Low-R_DS(ON) P-channel MOSFET used in active clamp or synchronous rectification topology.

Use Value: 1.45 mΩ R_DS(ON) reduces conduction loss by >40% vs. comparable 3.5 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Electric Power Steering Motor Driver

High-Current Industrial Solenoid Controller

Use Scenario: Half-bridge high-side switch in EPS assist motor phase-legs, handling peak currents up to 180 A.

IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET with t_off = 1750 ns, driven by isolated gate driver with negative turn-off bias.

Use Value: Guaranteed SOA and 924 mJ avalanche energy prevent failure during motor stall or sudden direction reversal.

Use Scenario: High-side switch controlling 100–200 A solenoids in hydraulic valve manifolds and factory automation actuators.

IC Role / Device Role / Timing Role: Robust power switch with low leakage (I_DSS ≤ −10 µA at −40 V) ensuring zero-power hold state stability.

Use Value: TO-220SM(W) package enables direct bolt-down heatsinking, sustaining continuous 150 A operation at ambient ≤ 60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP200P04T	R_DS(ON) = 2.0 mΩ (typ.), higher Q_g = 520 nC, TO-220 package (non-insulated tab)	Lacks AEC-Q101 qualification; suitable for industrial but not automotive use.	Select when cost sensitivity outweighs automotive compliance and thermal interface flexibility is less critical.
STP200PF4LL	R_DS(ON) = 1.8 mΩ (typ.), lower I_D = −120 A, same TO-220FP package footprint	Lower current rating limits use in >120 A motor phases; no published E_AS data.	Choose for space-constrained designs where 120 A peak suffices and gate drive energy budget is tighter.

Compared with IXTP200P04T and STP200PF4LL, the TJ200F04M3L,LXHQ offers superior automotive qualification, lower on-resistance, and verified avalanche robustness - making it the preferred choice for safety-critical, high-current, thermally demanding applications where reliability and SOA margin are non-negotiable.

Availability

TJ200F04M3L,LXHQ is available at Aetrix Electronics and suitable for automotive body control modules, industrial 48 V DC-DC converters, and high-current motor drivers requiring stable component supply across multi-year production cycles.

Supply support for TJ200F04M3L,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power electronics innovation.

The TJ200F04M3L,LXHQ belongs to Toshiba's U-MOS VIII P-channel power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive and industrial switching applications demanding low R_DS(ON), rugged avalanche performance, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current rating for TJ200F04M3L,LXHQ?

The TJ200F04M3L,LXHQ is rated for −200 A DC drain current at T_c = 25 °C. This rating assumes proper heatsinking via the drain-connected tab (R_th(ch-c) = 0.4 °C/W). Derating is required above 25 °C case temperature per the PD–Tc curve in the datasheet. At T_c = 100 °C, the usable DC current drops to approximately −120 A.

Is TJ200F04M3L,LXHQ qualified for automotive applications?

Yes, the TJ200F04M3L,LXHQ is AEC-Q101 qualified, having passed stress tests including high-temperature reverse bias (HTRB), temperature cycling, and unclamped inductive switching (UIS). This certification confirms its suitability for automotive powertrain, chassis, and body electronics where reliability under harsh environmental conditions is mandatory.

What is the gate threshold voltage range for TJ200F04M3L,LXHQ?

The TJ200F04M3L,LXHQ has a gate threshold voltage (V_th) range of −2.0 V to −3.0 V, measured at V_DS = −10 V and I_D = −1 mA. This negative V_th confirms its enhancement-mode P-channel operation, requiring a negative gate-source voltage relative to source to turn on fully.

Does TJ200F04M3L,LXHQ include an integrated body diode?

Yes, the TJ200F04M3L,LXHQ includes a monolithic body diode with forward voltage V_DSF = 1.2 V (typ.) at I_DR = −200 A and reverse recovery charge Q_rr = 104 nC (typ.). This diode supports freewheeling and synchronous rectification functions, and its characteristics are specified and tested per the datasheet's Section 6.4.

What package type does TJ200F04M3L,LXHQ use, and is the drain electrically connected to the heatsink?

The TJ200F04M3L,LXHQ uses the TO-220SM(W) package (Toshiba designation: 2-10W1S), where terminal 2 (Drain) is directly connected to the internal heatsink tab. This configuration requires electrical isolation between the heatsink and PCB ground unless the system design intentionally references the drain potential to chassis or heatsink ground.

TJ200F04M3L,LXHQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVI

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 200A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 460 nC @ 10 V

Vgs (Max):: +10V, -20V

Input Capacitance (Ciss) (Max) @ Vds:: 1280 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-220SM(W)

TJ200F04M3L,LXHQ FAQ

1.How can I place an order for TJ200F04M3L,LXHQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TJ200F04M3L,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TJ200F04M3L,LXHQ reliable?

The price and inventory of TJ200F04M3L,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TJ200F04M3L,LXHQ is usually 5 days.

3.What payment methods are accepted for TJ200F04M3L,LXHQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TJ200F04M3L,LXHQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TJ200F04M3L,LXHQ?

TJ200F04M3L,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TJ200F04M3L,LXHQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TJ200F04M3L,LXHQ?

For technical support, including TJ200F04M3L,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TJ200F04M3L,LXHQ requirements.

6.How does Aetrix verify that TJ200F04M3L,LXHQ is sourced from the original manufacturer or authorized distributors?

All TJ200F04M3L,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TJ200F04M3L,LXHQ meets industry standards.

7.What is the process for return or replacement of TJ200F04M3L,LXHQ?

All TJ200F04M3L,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TJ200F04M3L,LXHQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TJ200F04M3L,LXHQ part is unused and in its original packaging.

Return procedure for TJ200F04M3L,LXHQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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