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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK068N65Z5,S1F

Name: TK068N65Z5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK068N65Z5,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK068N65Z5,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK068N65Z5,S1F.pdf

Description:: 650V DTMOS6-HSD TO-247 68MOHM

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Product details

Overview

TK068N65Z5,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ power MOSFET designed for high-efficiency switching in 650 V DC-link applications. It delivers R_DS(ON) = 0.052 Ω (typ.), fast reverse recovery time (t_rr = 135 ns), and avalanche-rated ruggedness (E_AS = 730 mJ), enabling use in industrial AC-DC PFC stages and server SMPS primary-side switches.

For engineers reviewing the TK068N65Z5,S1F datasheet, TK068N65Z5,S1F pinout, TK068N65Z5,S1F application, or TK068N65Z5,S1F equivalent, key selection criteria include its TO-247 package thermal performance (R_th(ch-c) = 0.462 °C/W), gate charge profile (Q_g = 68 nC), and diode-integrated body diode characteristics critical for ZVS/ZCS topologies.

Technical Context

This device implements Toshiba's DTMOS™ V technology with optimized cell layout and trench-gate structure to simultaneously reduce conduction loss and switching loss. Its low C_iss (3765 pF) and C_oss (92 pF) support high-frequency operation up to 200 kHz while maintaining dv/dt ruggedness of 3.5 V/ns.

The integrated body diode features controlled reverse recovery (Q_rr = 0.74 µC, t_rr = 135 ns) and exhibits no tail current-enabling efficient hard-switched and quasi-resonant converter designs without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V AC input rectified to 560–600 V DC bus with margin for surge and ringing
R_DS(ON)	0.052 Ω (typ.) - enables <1.2 W conduction loss at 18.5 A DC, reducing heatsink requirements
t_rr	135 ns (typ.) - minimizes diode recovery loss and EMI in continuous conduction mode PFC
E_AS	730 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits
Q_g	68 nC - determines gate drive power and switching speed; compatible with standard 1-A peak drivers
R_th(ch-c)	0.462 °C/W - allows 270 W dissipation with ≤125 °C case rise above ambient, supporting compact thermal design
V_th	3.5–4.5 V - ensures reliable enhancement-mode turn-on with standard 5 V or 10 V gate drive logic

Pinout & Package

Package: TO-247 (TOSHIBA 2-16L1A), through-hole, isolated heatsink tab (Drain-connected). Weight: 6.15 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; requires 10 V for full enhancement; sensitive to ESD
2 (Drain)	Main current path output / Heatsink connection	High-voltage drain terminal; electrically connected to metal tab for direct thermal mounting
3 (Source)	Reference node / Current return	Low-side reference for gate drive; forms common source node in buck/LLC half-bridge configurations

Key Features

Feature	Design Value
DTMOS™ V trench-gate architecture	Reduces R_DS(ON) × Q_g figure-of-merit by 25% vs. prior-gen 650 V MOSFETs
Integrated fast-recovery body diode	Eliminates need for discrete anti-parallel SiC Schottky in cost-sensitive 1–3 kW PFC stages
Avalanche-rated (E_AS)	Guarantees robustness against inductive switching transients without derating in flyback or forward converters
RoHS-compliant packaging	Meets EU Directive 2011/65/EU; marked with underlined Lot No. indicating [[G]]/RoHS compatibility
Enhancement-mode threshold	V_th = 3.5–4.5 V ensures clean turn-on with standard microcontroller GPIO or PWM controller outputs

Applications

Industrial AC-DC Power Supplies	Server & Telecom SMPS
Use Scenario: Primary-side switch in 1–3 kW active PFC boost converters operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-voltage switching element handling 650 V DC bus and 37 A pulsed drain current. Use Value: Low R_DS(ON) and fast t_rr reduce total power loss by ≥8% vs. legacy 650 V MOSFETs in continuous conduction mode.	Use Scenario: Main switch in 80+ Titanium-certified 2–4 kW server power supplies using LLC resonant topology. IC Role / Device Role / Timing Role: Half-bridge primary switch with synchronous body diode recovery during zero-voltage switching transitions. Use Value: Controlled Q_rr (0.74 µC) and low C_oss enable stable ZVS across 20–50% load range without auxiliary circuits.
Uninterruptible Power Systems (UPS)	Industrial Motor Drives
Use Scenario: Inverter leg switch in 3–5 kVA online UPS inverters with bidirectional energy flow. IC Role / Device Role / Timing Role: Bidirectional switching device supporting regeneration and battery charging modes. Use Value: Avalanche rating (730 mJ) protects against inductive kickback during rapid current reversal in H-bridge commutation.	Use Scenario: Output stage switch in 7.5–15 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverters requiring lower conduction loss and higher efficiency. Use Value: R_DS(ON) = 0.052 Ω reduces conduction loss by ~35% vs. comparable 650 V IGBTs at 25 °C junction temperature.

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: Primary-side switch in 1–3 kW active PFC boost converters operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element handling 650 V DC bus and 37 A pulsed drain current.

Use Value: Low R_DS(ON) and fast t_rr reduce total power loss by ≥8% vs. legacy 650 V MOSFETs in continuous conduction mode.

Use Scenario: Main switch in 80+ Titanium-certified 2–4 kW server power supplies using LLC resonant topology.

IC Role / Device Role / Timing Role: Half-bridge primary switch with synchronous body diode recovery during zero-voltage switching transitions.

Use Value: Controlled Q_rr (0.74 µC) and low C_oss enable stable ZVS across 20–50% load range without auxiliary circuits.

Uninterruptible Power Systems (UPS)

Industrial Motor Drives

Use Scenario: Inverter leg switch in 3–5 kVA online UPS inverters with bidirectional energy flow.

IC Role / Device Role / Timing Role: Bidirectional switching device supporting regeneration and battery charging modes.

Use Value: Avalanche rating (730 mJ) protects against inductive kickback during rapid current reversal in H-bridge commutation.

Use Scenario: Output stage switch in 7.5–15 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: IGBT replacement in 16 kHz PWM inverters requiring lower conduction loss and higher efficiency.

Use Value: R_DS(ON) = 0.052 Ω reduces conduction loss by ~35% vs. comparable 650 V IGBTs at 25 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N65M5	R_DS(ON) = 0.055 Ω, t_rr = 170 ns, Q_g = 72 nC, TO-247 package	Higher Q_rr and slower t_rr increase recovery loss in high-frequency PFC	Preferred where gate drive strength exceeds 1.2 A and thermal margin allows slightly higher R_DS(ON)
IXFH60N65X2	R_DS(ON) = 0.050 Ω, t_rr = 120 ns, Q_g = 65 nC, TO-247 package	Lower Q_g enables faster switching but reduced E_AS (520 mJ)	Selected when system prioritizes switching speed over single-pulse avalanche immunity

Compared with STW65N65M5 and IXFH60N65X2, the TK068N65Z5,S1F offers the best balance of low R_DS(ON), controlled t_rr, and guaranteed E_AS-making it optimal for mission-critical industrial PFC and UPS inverters where reliability under transient stress is non-negotiable.

Availability

TK068N65Z5,S1F is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server SMPS, and uninterruptible power systems requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK068N65Z5,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power electronics innovation.

The TK068N65Z5,S1F belongs to Toshiba's DTMOS™ V family-engineered specifically for high-efficiency, high-reliability 650 V switching applications in industrial and datacenter power conversion.

FAQ

What is the maximum continuous drain current rating for TK068N65Z5,S1F at T_c = 25 °C?

The TK068N65Z5,S1F has a maximum continuous drain current (I_D) rating of 37 A at case temperature T_c = 25 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the channel temperature limit of 150 °C. At elevated case temperatures, the current must be derated per the PD–Tc curve in Figure 8.15 of the datasheet.

Does TK068N65Z5,S1F have an integrated body diode, and what are its key recovery parameters?

Yes, the TK068N65Z5,S1F includes an integrated N-channel body diode. Its key recovery parameters are reverse recovery time t_rr = 135 ns (typ.), reverse recovery charge Q_rr = 0.74 µC (typ.), and peak reverse recovery current I_rr = 11 A (typ.), measured at V_DD = 400 V, I_DR = 18.5 A, and –dI_DR/dt = 100 A/µs. These values confirm suitability for hard-switched and resonant topologies.

Is TK068N65Z5,S1F pin-compatible with other TO-247 packaged 650 V MOSFETs?

The TK068N65Z5,S1F uses the industry-standard TO-247 mechanical outline (TOSHIBA 2-16L1A), with Gate–Drain–Source pinout (1–2–3). While physically mountable in any TO-247 socket, electrical compatibility depends on gate threshold, R_DS(ON), and dynamic parameters-not just pin count or package. Always verify drive voltage, switching behavior, and thermal interface before substitution.

What is the gate threshold voltage range for TK068N65Z5,S1F, and how does it affect drive circuit design?

The TK068N65Z5,S1F has a gate threshold voltage V_th range of 3.5 V to 4.5 V (measured at V_DS = 10 V, I_D = 1.69 mA). This ensures reliable turn-on with standard 5 V logic or 10 V gate drivers, while avoiding accidental activation from noise. Drive circuits should provide ≥10 V to achieve rated R_DS(ON) and minimize conduction loss.

How does the TK068N65Z5,S1F's avalanche rating compare to typical 650 V MOSFETs, and why does it matter?

The TK068N65Z5,S1F guarantees single-pulse avalanche energy E_AS = 730 mJ-significantly higher than many competing 650 V MOSFETs (typically 300–500 mJ). This matters because it provides margin against inductive switching transients in flyback, forward, and LLC converters, reducing or eliminating the need for external clamping circuits and improving system-level reliability.

TK068N65Z5,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSVI

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 68mOhm @ 18.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.69mA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3765 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK068N65Z5,S1F FAQ

1.How can I place an order for TK068N65Z5,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK068N65Z5,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK068N65Z5,S1F reliable?

The price and inventory of TK068N65Z5,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK068N65Z5,S1F is usually 5 days.

3.What payment methods are accepted for TK068N65Z5,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK068N65Z5,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK068N65Z5,S1F?

TK068N65Z5,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK068N65Z5,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK068N65Z5,S1F?

For technical support, including TK068N65Z5,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK068N65Z5,S1F requirements.

6.How does Aetrix verify that TK068N65Z5,S1F is sourced from the original manufacturer or authorized distributors?

All TK068N65Z5,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK068N65Z5,S1F meets industry standards.

7.What is the process for return or replacement of TK068N65Z5,S1F?

All TK068N65Z5,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK068N65Z5,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK068N65Z5,S1F part is unused and in its original packaging.

Return procedure for TK068N65Z5,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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