Toshiba Semiconductor and Storage TK090A65Z,S4X

Overview

TK090A65Z from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the DTMOS™ IV family, designed for high-efficiency 650 V switching applications. It delivers R_DS(ON) = 0.075 Ω (typ.), 30 A DC drain current, and 265 mJ single-pulse avalanche energy - enabling robust operation in offline AC-DC adapters and industrial SMPS.

For engineers reviewing the TK090A65Z datasheet, TK090A65Z pinout, TK090A65Z application, or TK090A65Z equivalent, key selection criteria include its TO-220SIS package with isolated source terminal, 120 V/ns dv/dt ruggedness, low Q_gd = 12 nC for fast hard-switching, and guaranteed 150 °C channel temperature rating.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with optimized cell layout to reduce both conduction and switching losses. Its gate threshold voltage of 3–4 V (V_DS = 10 V, I_D = 1.27 mA) ensures reliable enhancement-mode turn-on with standard 10 V gate drive, while low C_iss = 2780 pF and C_oss = 63 pF support high-frequency operation up to 100 kHz.

The device integrates an intrinsic body diode with t_rr = 330 ns and Q_rr = 5.1 µC, enabling moderate-speed synchronous rectification or freewheeling in flyback and LLC topologies. Its R_th(ch-c) = 2.77 °C/W allows direct heatsink mounting without insulating pads when used in TO-220SIS configuration.

Key Specifications

Pinout & Package

TK090A65Z is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with electrically isolated source terminal - enabling direct heatsink mounting without thermal pad or insulator. The case is connected to the source, but the molded plastic isolates it from PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP30N65DM6 and IXFH30N65X2, TK090A65Z offers integrated source isolation and lower C_oss, reducing system-level BOM count and EMI filter size - critical for space-constrained 1U server PSUs and DIN-rail mounted industrial adapters.

Availability

TK090A65Z is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and PFC boost converters requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK090A65Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK090A65Z belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in datacenter, industrial, and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK090A65Z?

The TK090A65Z has a DC drain current rating of 30 A at case temperature T_c = 25 °C. At elevated case temperatures, derating applies per the Safe Operating Area curve (Fig. 8.18); at T_c = 100 °C, the usable I_D drops to approximately 18 A. This rating assumes proper heatsinking via the TO-220SIS isolated tab and adherence to R_th(ch-c) = 2.77 °C/W thermal path.

Does TK090A65Z require a gate resistor for stability in hard-switching applications?

Yes - the TK090A65Z benefits from a 10 Ω gate resistor (RG) as specified in the switching time test conditions. This value damps ringing caused by gate loop inductance and prevents oscillation during fast transitions. Lower values (<5 Ω) risk overshoot and shoot-through in half-bridge configurations; higher values (>22 Ω) increase switching losses and slow down t_on/t_off.

Is TK090A65Z suitable for use in avalanche mode during normal operation?

No - the TK090A65Z is rated for single-pulse avalanche energy (E_AS = 265 mJ), intended only for fault tolerance during transient overloads like inductive kickback. Continuous avalanche operation is not characterized or guaranteed and will accelerate wear-out. Designers must ensure operating conditions stay within the SOA boundary to avoid cumulative degradation of the TK090A65Z.

What is the isolation voltage rating of the TO-220SIS package used in TK090A65Z?

The TO-220SIS package of the TK090A65Z provides 2000 V_RMS isolation between the source terminal and the heatsink-mounting surface. This allows direct mechanical attachment to grounded metal chassis without thermal interface pads or insulating washers - simplifying thermal design and reducing thermal resistance in high-power density applications using the TK090A65Z.

How does the body diode performance of TK090A65Z compare to standard silicon MOSFETs?

The TK090A65Z features a tailored body diode with t_rr = 330 ns and Q_rr = 5.1 µC - significantly lower than typical 650 V MOSFETs (often >10 µC Q_rr). This reduces reverse recovery loss and associated EMI, making the TK090A65Z more suitable for quasi-resonant flyback and LLC converters where body diode conduction occurs regularly during dead-time intervals.