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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK090E65Z,S1X

Name: TK090E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK090E65Z,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK090E65Z,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK090E65Z,S1X.pdf

Description:: 650V DTMOS VI TO-220 90MOHM

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Product details

Overview

TK090E65Z,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS power MOSFET designed for high-efficiency switching in offline AC-DC power supplies. It delivers 650 V V_DSS, 30 A I_D (DC), R_DS(ON) = 0.075 Ω (typ.), and operates with V_th = 3–4 V, enabling robust gate drive compatibility in 24 V or 15 V control rails.

For engineers reviewing the TK090E65Z,S1X datasheet, TK090E65Z,S1X pinout, TK090E65Z,S1X application, or TK090E65Z,S1X equivalent, key selection criteria include avalanche energy rating (E_AS = 265 mJ), dv/dt ruggedness (100 V/ns), thermal resistance (R_th(ch-c) = 0.543 °C/W), and integrated body diode recovery performance (Q_rr = 5.1 µC).

Technical Context

This DTMOS device uses trench-gate super-junction architecture to achieve low conduction loss while maintaining fast switching speed and high avalanche capability. Its 650 V breakdown voltage and 7.5 A single-pulse avalanche current support operation in universal-input PFC and LLC resonant converters.

The MOSFET features enhancement-mode operation with tightly controlled threshold voltage (3–4 V) and low input/output capacitances (C_iss = 2780 pF, C_oss = 116 pF), enabling efficient gate driving and reduced switching losses in hard-switched topologies up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal AC input (85–265 VAC) with sufficient margin for surge and ringing in flyback/PFC stages
R_DS(ON)	0.075 Ω (typ.) - reduces conduction loss in 30 A DC primary-side switches, improving efficiency at full load
I_D (DC)	30 A - enables use in 300–500 W industrial and server SMPS without parallel devices
E_AS	265 mJ - provides robust single-pulse avalanche immunity during turn-off under inductive load stress
R_th(ch-c)	0.543 °C/W - allows direct mounting to heatsink for thermal management in TO-220 packages at ≤230 W dissipation
Q_g	47 nC - determines gate driver power requirement and influences switching transition time in 10–100 kHz applications
dv/dt	100 V/ns - ensures noise-immune operation in high-dV/dt environments like half-bridge snubbers and motor drives

Pinout & Package

TK090E65Z,S1X is housed in a standard through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	Control terminal requiring <3 V threshold activation; sensitive to ESD - must be protected with gate resistor and clamping
2 (Tab/Heatsink)	Drain	High-voltage power terminal; electrically connected to metal tab - requires isolation from chassis unless referenced to high-side potential
3 (Lead)	Source	Return path for load current; serves as reference for gate drive in low-side configurations

Key Features

Feature	Design Value
Low R_DS(ON)	0.075 Ω typ. minimizes I²R losses in continuous conduction mode (CCM) PFC and main switch applications
High dv/dt ruggedness	100 V/ns rating prevents spurious turn-on during high-slew-rate transients in bridge-leg configurations
Fast body diode	Q_rr = 5.1 µC and t_rr = 330 ns enable reliable synchronous rectification or freewheeling in quasi-resonant converters
Trench-gate DTMOS structure	Optimizes trade-off between switching speed (C_iss/C_oss) and conduction loss - validated for 100 kHz hard-switched operation

Applications

Server Power Supply	Industrial AC-DC Adapter
Use Scenario: Primary-side switching in 400 W LLC resonant converter with universal AC input. IC Role / Device Role / Timing Role: High-voltage N-channel power switch operating in zero-voltage switching (ZVS) mode. Use Value: Low R_DS(ON) and low Q_g reduce conduction and switching losses, achieving >94% efficiency at full load.	Use Scenario: Active clamp forward converter in 300 W factory automation power module. IC Role / Device Role / Timing Role: Main switching transistor handling 650 V bus with repetitive avalanche stress during clamp cycle. Use Value: Guaranteed E_AS = 265 mJ ensures reliability under repeated clamp energy absorption without derating.
Telecom Rectifier	LED Driver Power Stage
Use Scenario: High-density 1U telecom rectifier with dual-phase interleaved PFC. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) with 100 kHz switching frequency. Use Value: C_iss = 2780 pF and Q_gd = 12 nC enable stable gate drive with minimal Miller-induced oscillation.	Use Scenario: Isolated flyback LED driver for street lighting with 300 V DC bus. IC Role / Device Role / Timing Role: Primary-side switch managing 30 A peak current pulses and high dv/dt during demagnetization. Use Value: dv/dt = 100 V/ns and V_th = 3–4 V prevent false triggering and ensure clean turn-off in noisy EMI environments.

Server Power Supply

Industrial AC-DC Adapter

Use Scenario: Primary-side switching in 400 W LLC resonant converter with universal AC input.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch operating in zero-voltage switching (ZVS) mode.

Use Value: Low R_DS(ON) and low Q_g reduce conduction and switching losses, achieving >94% efficiency at full load.

Use Scenario: Active clamp forward converter in 300 W factory automation power module.

IC Role / Device Role / Timing Role: Main switching transistor handling 650 V bus with repetitive avalanche stress during clamp cycle.

Use Value: Guaranteed E_AS = 265 mJ ensures reliability under repeated clamp energy absorption without derating.

Telecom Rectifier

LED Driver Power Stage

Use Scenario: High-density 1U telecom rectifier with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) with 100 kHz switching frequency.

Use Value: C_iss = 2780 pF and Q_gd = 12 nC enable stable gate drive with minimal Miller-induced oscillation.

Use Scenario: Isolated flyback LED driver for street lighting with 300 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch managing 30 A peak current pulses and high dv/dt during demagnetization.

Use Value: dv/dt = 100 V/ns and V_th = 3–4 V prevent false triggering and ensure clean turn-off in noisy EMI environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 650 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NM60ND	R_DS(ON) = 0.12 Ω (higher), Q_g = 42 nC (lower), E_AS not specified	Lacks guaranteed avalanche rating; suitable only where layout controls voltage overshoot	Prefer TK090E65Z,S1X when operating near SOA limits or in unclamped inductive loads
IPP65R190CFD7	R_DS(ON) = 0.19 Ω (higher), Co(er) = 32 pF (lower), integrated fast diode (Q_rr = 3.8 µC)	Better diode recovery but higher conduction loss; optimized for ZVS, not hard switching	Choose TK090E65Z,S1X for cost-sensitive 100 kHz hard-switched designs needing lower R_DS(ON)

Compared with STP30NM60ND and IPP65R190CFD7, TK090E65Z,S1X offers the lowest R_DS(ON) among 650 V TO-220 MOSFETs with certified avalanche capability, making it optimal for high-current, high-reliability offline SMPS where thermal margin and transient robustness are critical.

Availability

TK090E65Z,S1X is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifiers requiring stable component supply and long-term manufacturability.

Supply support for TK090E65Z,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power semiconductors.

The TK090E65Z,S1X belongs to Toshiba's DTMOS IV family, engineered specifically for high-efficiency, high-reliability switching power supplies operating at 650 V with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current for TK090E65Z,S1X at 100°C case temperature?

The TK090E65Z,S1X supports 30 A DC drain current at T_c = 25°C. At T_c = 100°C, derating applies per Fig. 8.17: ID drops to approximately 18 A. This reflects thermal limitation of the TO-220 package, not device failure - proper heatsinking maintains safe channel temperature below 150°C. Always verify actual T_c in system-level thermal simulation before final design.

Does TK090E65Z,S1X have a fully rated avalanche capability?

Yes, TK090E65Z,S1X specifies guaranteed single-pulse avalanche energy E_AS = 265 mJ and single-pulse avalanche current I_AS = 7.5 A (V_DD = 90 V, L = 8.34 mH). This is production-tested and documented in Section 4 of the datasheet. It is not a typical or calculated value - it is a minimum guaranteed parameter for design margin in unclamped inductive switching.

Can TK090E65Z,S1X be used in a high-side configuration?

TK090E65Z,S1X can be used in high-side configurations, but requires level-shifted gate drive due to its N-channel topology. The drain-connected tab must be isolated from heatsink if floating above ground. Gate-source voltage must remain within ±30 V, and V_GS must exceed V_th (3–4 V) relative to source potential. Use dedicated high-side drivers (e.g., IRS21844) - do not rely on bootstrap alone for sustained DC high-side operation.

What is the typical reverse recovery charge (Q_rr) of the body diode in TK090E65Z,S1X?

The TK090E65Z,S1X body diode has a typical reverse recovery charge Q_rr of 5.1 µC under conditions of V_DD = 400 V, I_DR = 15 A, and dI_DR/dt = 100 A/µs. This value is measured and specified in Section 6.4. It enables predictable snubber design and helps estimate commutation losses in quasi-resonant or active-clamp topologies where the body diode conducts.

Is TK090E65Z,S1X RoHS compliant and halogen-free?

Yes, TK090E65Z,S1X meets EU RoHS Directive 2011/65/EU and is halogen-free per Toshiba's environmental compliance documentation. The device carries the "Green" marking per Toshiba's internal standards and is qualified for lead-free reflow soldering (JEDEC J-STD-020). Full material declarations and test reports are available upon request from Toshiba or Aetrix Electronics.

TK090E65Z,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.27mA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK090E65Z,S1X FAQ

1.How can I place an order for TK090E65Z,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK090E65Z,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK090E65Z,S1X reliable?

The price and inventory of TK090E65Z,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK090E65Z,S1X is usually 5 days.

3.What payment methods are accepted for TK090E65Z,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK090E65Z,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK090E65Z,S1X?

TK090E65Z,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK090E65Z,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK090E65Z,S1X?

For technical support, including TK090E65Z,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK090E65Z,S1X requirements.

6.How does Aetrix verify that TK090E65Z,S1X is sourced from the original manufacturer or authorized distributors?

All TK090E65Z,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK090E65Z,S1X meets industry standards.

7.What is the process for return or replacement of TK090E65Z,S1X?

All TK090E65Z,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK090E65Z,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK090E65Z,S1X part is unused and in its original packaging.

Return procedure for TK090E65Z,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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