Toshiba Semiconductor and Storage TK090N65Z,S1F

Overview

TK090N65Z,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ IV superjunction MOSFET designed for high-efficiency, high-voltage switching in power conversion stages. It delivers R_DS(ON) = 0.075 Ω (typ.), 650 V V_DSS, and 30 A I_D (DC) in a TO-247 package, targeting primary-side switches in industrial AC-DC SMPS and PFC circuits.

For engineers reviewing the TK090N65Z,S1F datasheet, TK090N65Z,S1F pinout, TK090N65Z,S1F application, or TK090N65Z,S1F equivalent, key selection criteria include avalanche ruggedness (E_AS = 265 mJ), low gate charge (Q_g = 47 nC), diode reverse recovery performance (t_rr = 330 ns), and thermal resistance (R_th(ch-c) = 0.543 °C/W).

Technical Context

The TK090N65Z,S1F implements Toshiba's DTMOS™ IV process with optimized cell pitch and deep-trench structure to reduce specific on-resistance while maintaining fast switching. Its enhancement-mode operation (V_th = 3–4 V) enables direct drive from standard 10 V gate drivers, and its low C_iss (2780 pF) and C_rss (2 pF) support high-frequency operation up to 100 kHz in hard-switched topologies.

Integrated body diode characteristics-V_DSF = −1.7 V (max), Q_rr = 5.1 µC, and dv/dt ruggedness ≥50 V/ns-are specified under realistic conditions (I_DR = 30 A, −dI_DR/dt = 100 A/µs), enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant LLC secondary-side synchronous rectification.

Key Specifications

Pinout & Package

TK090N65Z,S1F is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated tab (Drain-connected heatsink). The case is electrically tied to Drain, requiring insulated mounting hardware in floating-source applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW65N60DM6 and IXTH72N65X2, the TK090N65Z,S1F offers optimal balance of voltage margin, gate drive simplicity, and thermal performance for 1–3 kW industrial SMPS-delivering 0.075 Ω on-resistance with 47 nC gate charge and guaranteed 265 mJ avalanche energy.

Availability

TK090N65Z,S1F is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and PFC boost stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK090N65Z,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK090N65Z,S1F belongs to Toshiba's DTMOS™ IV superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in industrial, telecom, and renewable energy applications.

FAQ

What is the maximum continuous drain current for TK090N65Z,S1F at T_c = 25 °C?

The TK090N65Z,S1F supports 30 A DC drain current at case temperature T_c = 25 °C, derating linearly to zero at T_c = 105 °C per the absolute maximum ratings table. This rating assumes proper heatsinking and adherence to R_th(ch-c) = 0.543 °C/W thermal path. Exceeding this current without thermal mitigation risks channel temperature exceeding 150 °C.

Does TK090N65Z,S1F have an integrated body diode, and what are its key parameters?

Yes, the TK090N65Z,S1F includes a monolithic body diode with V_DSF = −1.7 V (max) at I_DR = 30 A, t_rr = 330 ns (typ.), Q_rr = 5.1 µC (typ.), and dv/dt ruggedness ≥50 V/ns. These values are measured under standardized conditions (−dI_DR/dt = 100 A/µs, V_DD = 400 V), making TK090N65Z,S1F suitable for synchronous rectification and DCM PFC where diode behavior directly impacts efficiency and EMI.

Is TK090N65Z,S1F pin-compatible with other TO-247 MOSFETs, and what mechanical considerations apply?

The TK090N65Z,S1F uses the industry-standard TO-247 package (JEITA SC-65), ensuring mechanical compatibility with TO-247 footprints. However, its Drain-connected tab requires electrical isolation from the heatsink unless the system design references Drain to chassis ground. Mounting torque must not exceed 0.8 N·m to avoid package cracking, and thermal interface material must accommodate the 6.15 g unit weight and tab flatness tolerance.

What gate drive voltage range is recommended for reliable operation of TK090N65Z,S1F?

The TK090N65Z,S1F is specified for V_GS = ±30 V absolute maximum, with enhancement-mode threshold V_th = 3–4 V (V_DS = 10 V, I_D = 1.27 mA). For robust switching, Toshiba recommends V_GS = 10–15 V to fully enhance the channel and minimize R_DS(ON). Gate drive must limit peak current to avoid overshoot and ensure turn-on/turn-off times align with tr = 60 ns and tf = 4 ns (RG = 10 Ω).

How does TK090N65Z,S1F perform under avalanche stress, and is it rated for repetitive operation?

The TK090N65Z,S1F is characterized for single-pulse avalanche energy E_AS = 265 mJ (T_ch = 25 °C), with I_AS = 7.5 A and V_DD = 90 V. Toshiba does not specify or guarantee repetitive avalanche capability; therefore, TK090N65Z,S1F should be operated within SOA limits and protected against repeated inductive switching events using clamping circuits or snubbers in designs where such stress is expected.