Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK090Z65Z,S1F

Name: TK090Z65Z,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK090Z65Z,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK090Z65Z,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: TK090Z65Z,S1F.pdf

Description:: MOSFET N-CH 650V 30A TO247-4L

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:25

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK090Z65Z,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ power MOSFET designed for high-efficiency switching in primary-side SMPS circuits. It delivers 650 V V_DSS, 30 A continuous drain current, and ultra-low R_DS(ON) of 0.075 Ω (typ.) at V_GS = 10 V, enabling reduced conduction loss in 1–3 kW AC/DC adapters and server PSUs.

For engineers reviewing the TK090Z65Z,S1F datasheet, TK090Z65Z,S1F pinout, TK090Z65Z,S1F application, or TK090Z65Z,S1F equivalent, key selection criteria include its TO-247-4L(T) package with isolated source pins, 265 mJ single-pulse avalanche energy rating, and 100 V/ns dv/dt ruggedness-critical for hard-switched PFC and LLC resonant converters.

Technical Context

This device implements Toshiba's Double-diffused Trench MOS (DTMOS) structure to achieve low gate charge (Q_g = 47 nC typ.) and optimized capacitance profile (C_iss = 2780 pF, C_oss = 63 pF), supporting high-frequency operation up to 300 kHz while maintaining robust EAS capability (265 mJ). Its enhancement-mode threshold (V_th = 3–4 V) ensures reliable turn-on with standard 10 V gate drivers.

The TO-247-4L(T) package integrates a dedicated gate-return source pin (Pin 2) separate from main current path source (Pin 3), minimizing gate loop inductance and improving switching stability under high di/dt conditions. Thermal resistance R_th(ch-c) = 0.543 °C/W enables high-power dissipation at T_c = 25 °C with 230 W rated power.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input offline SMPS without derating in 400 V DC bus applications
R_DS(ON)	0.075 Ω (typ.) - reduces conduction loss to ≤17 W at 30 A, enabling >95% efficiency in 2 kW PFC stages
I_D (DC)	30 A - rated for continuous operation with heatsink at T_c = 25 °C
E_AS	265 mJ - withstands single-pulse inductive energy during overcurrent events without failure
Q_g	47 nC (typ.) - enables fast switching with <50 ns turn-off time using 10 Ω gate resistor
dv/dt	100 V/ns - suppresses false triggering during high-speed voltage transients in bridge configurations
R_th(ch-c)	0.543 °C/W - allows 230 W power dissipation with ΔT = 125 °C between channel and case

Pinout & Package

Package: TO-247-4L(T), 4-pin through-hole with isolated source terminals and integral heatsink tab (Pin 1 = Drain/Heatsink).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-voltage current path terminal	Connected directly to heatsink; carries full load current and must be electrically insulated from chassis ground
2 (Source 2)	Gate driver return path	Dedicated low-inductance return for gate signal only; must not carry main current
3 (Source 1)	Main current return path	Primary source connection for load current; ties to power ground with minimal trace inductance
4 (Gate)	Control input	Receives gate drive signal; requires low-impedance path to Source 2 to minimize ringing

Key Features

Feature	Design Value
DTMOS™ trench architecture	Enables simultaneous optimization of R_DS(ON) and Q_g, reducing total switching + conduction loss by ≥15% vs planar MOSFETs
Isolated source pins	Separates gate-loop and power-loop paths to eliminate common-source inductance, improving noise immunity and dV/dt tolerance
High avalanche energy rating	265 mJ single-pulse EAS supports unclamped inductive switching without external snubbers in flyback or forward topologies
Low Crss/Ciss ratio	Crss = 2 pF / Ciss = 2780 pF → 0.07% - minimizes Miller effect, enabling stable operation at high V_DS slew rates
Enhancement-mode V_th	3–4 V threshold ensures clean turn-on with industry-standard 10 V gate drivers and avoids unintended conduction during startup

Applications

Server Power Supply Units	Industrial AC/DC Adapters
Use Scenario: Primary-side switch in 2–3 kW multi-output server PSUs operating at 100–240 VAC input. IC Role / Device Role / Timing Role: High-voltage switching element in active clamp forward or LLC resonant converter topology. Use Value: 0.075 Ω R_DS(ON) and 47 nC Q_g reduce combined losses to <22 W, enabling 80 PLUS Titanium compliance without liquid cooling.	Use Scenario: Main switch in 1.5 kW industrial AC/DC adapter for PLC controllers and motor drives. IC Role / Device Role / Timing Role: Hard-switched PFC boost switch handling 12 A RMS input current at 50 kHz. Use Value: 265 mJ EAS rating eliminates need for external avalanche-rated snubber, simplifying BOM and layout.
Telecom Rectifiers	Renewable Energy Inverters
Use Scenario: Output rectification stage in -48 V telecom rectifier modules with 30 A output current. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for secondary-side Schottky diodes in phase-shifted full-bridge topology. Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during rapid bus voltage transitions across transformer leakage inductance.	Use Scenario: DC-link switching in 5 kW solar string inverters with 1000 V PV input. IC Role / Device Role / Timing Role: High-side switch in three-level NPC (Neutral Point Clamped) inverter leg. Use Value: TO-247-4L(T) package with isolated source pins enables precise gate control timing and minimizes shoot-through risk in multilevel topologies.

Server Power Supply Units

Industrial AC/DC Adapters

Use Scenario: Primary-side switch in 2–3 kW multi-output server PSUs operating at 100–240 VAC input.

IC Role / Device Role / Timing Role: High-voltage switching element in active clamp forward or LLC resonant converter topology.

Use Value: 0.075 Ω R_DS(ON) and 47 nC Q_g reduce combined losses to <22 W, enabling 80 PLUS Titanium compliance without liquid cooling.

Use Scenario: Main switch in 1.5 kW industrial AC/DC adapter for PLC controllers and motor drives.

IC Role / Device Role / Timing Role: Hard-switched PFC boost switch handling 12 A RMS input current at 50 kHz.

Use Value: 265 mJ EAS rating eliminates need for external avalanche-rated snubber, simplifying BOM and layout.

Telecom Rectifiers

Renewable Energy Inverters

Use Scenario: Output rectification stage in -48 V telecom rectifier modules with 30 A output current.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for secondary-side Schottky diodes in phase-shifted full-bridge topology.

Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during rapid bus voltage transitions across transformer leakage inductance.

Use Scenario: DC-link switching in 5 kW solar string inverters with 1000 V PV input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (Neutral Point Clamped) inverter leg.

Use Value: TO-247-4L(T) package with isolated source pins enables precise gate control timing and minimizes shoot-through risk in multilevel topologies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N65M5	650 V, 62 A, R_DS(ON) = 0.055 Ω, Q_g = 65 nC, TO-247-3L	Higher current rating but no isolated source pin; lacks dedicated gate-return path	Preferred where higher I_D is needed and gate loop inductance is managed via PCB layout
IXFH50N65X2	650 V, 50 A, R_DS(ON) = 0.065 Ω, Q_g = 52 nC, TO-247-3L	Superjunction structure; no source pin separation; lower EAS (190 mJ)	Suitable for soft-switched applications where avalanche stress is minimal

Compared with STW62N65M5 and IXFH50N65X2, TK090Z65Z,S1F offers superior gate-loop integrity via its 4-pin configuration and higher EAS margin-making it optimal for hard-switched, high-reliability industrial power supplies where layout-induced noise and transient energy absorption are critical.

Availability

TK090Z65Z,S1F is available at Aetrix Electronics and suitable for server power supply units, industrial AC/DC adapters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK090Z65Z,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK090Z65Z,S1F belongs to Toshiba's DTMOS™ VI high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching power supplies operating above 1 kW.

FAQ

What is the gate threshold voltage range for TK090Z65Z,S1F?

The TK090Z65Z,S1F has a gate threshold voltage (V_th) range of 3.0 V to 4.0 V when measured at V_DS = 10 V and I_D = 1.27 mA. This enhancement-mode specification ensures predictable turn-on behavior with standard 10 V gate drivers and avoids spurious conduction during low-voltage startup sequences. The TK090Z65Z,S1F maintains this V_th stability across temperature, with typical drift of ±0.5 V from −40 °C to 125 °C.

Does TK090Z65Z,S1F require a negative gate voltage for reliable turn-off?

No, TK090Z65Z,S1F does not require negative gate voltage for reliable turn-off. Its gate-source voltage rating (±30 V) and V_th window (3–4 V) allow safe and complete turn-off with 0 V gate bias. However, applying −5 V to −10 V improves noise immunity in high-di/dt environments. The TK090Z65Z,S1F's low Crss (2 pF) further reduces Miller-induced turn-on risk, making zero-volt turn-off viable in well-designed gate-drive layouts.

How is the TO-247-4L(T) package of TK090Z65Z,S1F different from standard TO-247-3L?

The TK090Z65Z,S1F uses a TO-247-4L(T) package with four leads: Drain (Pin 1), Source 2/Gate Return (Pin 2), Source 1/Power Return (Pin 3), and Gate (Pin 4). Unlike TO-247-3L, this configuration separates gate-loop and power-loop return paths to eliminate common-source inductance-reducing gate oscillation and improving dv/dt immunity. The TK090Z65Z,S1F datasheet explicitly mandates routing gate signals only through Pin 2 and main current only through Pin 3.

What is the maximum allowable channel temperature for TK090Z65Z,S1F?

The maximum allowable channel temperature (T_ch) for TK090Z65Z,S1F is 150 °C, as specified in its Absolute Maximum Ratings table. Operation beyond this limit accelerates parametric degradation and reduces long-term reliability. The TK090Z65Z,S1F's R_th(ch-c) of 0.543 °C/W means that at 230 W power dissipation, the case temperature must remain ≤25 °C-requiring aggressive heatsinking or forced-air cooling in high-power applications.

Can TK090Z65Z,S1F replace older DTMOS IV devices like TK090E65Z in existing designs?

TK090Z65Z,S1F is not a direct drop-in replacement for TK090E65Z due to differences in pinout (4L vs 3L), gate charge (47 nC vs 58 nC), and thermal resistance (0.543 vs 0.65 °C/W). While both share 650 V/30 A ratings, the TK090Z65Z,S1F requires PCB layout changes to accommodate the fourth pin and revised gate-drive impedance tuning. Migration to TK090Z65Z,S1F should include validation of switching waveforms and thermal performance under full-load conditions.

TK090Z65Z,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSVI

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.27mA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4L(T)

TK090Z65Z,S1F FAQ

1.How can I place an order for TK090Z65Z,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK090Z65Z,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK090Z65Z,S1F reliable?

The price and inventory of TK090Z65Z,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK090Z65Z,S1F is usually 5 days.

3.What payment methods are accepted for TK090Z65Z,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK090Z65Z,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK090Z65Z,S1F?

TK090Z65Z,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK090Z65Z,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK090Z65Z,S1F?

For technical support, including TK090Z65Z,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK090Z65Z,S1F requirements.

6.How does Aetrix verify that TK090Z65Z,S1F is sourced from the original manufacturer or authorized distributors?

All TK090Z65Z,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK090Z65Z,S1F meets industry standards.

7.What is the process for return or replacement of TK090Z65Z,S1F?

All TK090Z65Z,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK090Z65Z,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK090Z65Z,S1F part is unused and in its original packaging.

Return procedure for TK090Z65Z,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…