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Toshiba Semiconductor and Storage TK099V65Z,LQ
- Part No.:
- TK099V65Z,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK099V65Z,LQ.pdf
- Description:
- MOSFET N-CH 650V 30A 5DFN
- Quantity:
- Payment:
- Shipping:
Inventory:12,407
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Product details
Overview
TK099V65Z from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ IV superjunction MOSFET designed for high-efficiency, high-voltage switching in offline power supplies. It delivers RDS(ON) = 0.08 Ω (typ.), 650 V VDSS, and 30 A ID (DC), with low gate charge (Qg = 47 nC typ.) and optimized capacitance for fast, low-loss operation in PFC and LLC resonant converters.
For engineers reviewing the TK099V65Z datasheet, TK099V65Z pinout, TK099V65Z application, or TK099V65Z equivalent, key selection considerations include its DFN8x8 package thermal performance (Rth(ch-c) = 0.543 °C/W), avalanche ruggedness (EAS = 265 mJ), and source-pin separation for gate return vs. main current path - critical for layout stability in high-current SMPS designs.
Technical Context
The TK099V65Z employs Toshiba's DTMOS™ IV process, featuring trench-gate superjunction architecture to simultaneously reduce RDS(ON) and gate charge while maintaining high dv/dt immunity (≥120 V/ns). Its enhancement-mode threshold (Vth = 3–4 V) ensures reliable turn-on with standard 10 V gate drive.
Thermal design leverages the exposed drain pad (Pin 5) as heatsink interface, with channel-to-case resistance of 0.543 °C/W enabling high-power density operation. The dual-source configuration (Pins 2 and 3/4) separates signal return (Source 1) from high-current conduction (Source 2), minimizing ground bounce in fast-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Supports universal-input AC-DC front-ends up to 400 V DC bus with margin for transient overvoltage. |
| RDS(ON) | 0.08 Ω (typ.) at VGS = 10 V, ID = 15 A - Enables <1.2 W conduction loss at 30 A, reducing heatsink requirements. |
| Qg | 47 nC (typ.) - Low total gate charge minimizes driver power and enables efficient 100+ kHz switching in resonant converters. |
| EAS | 265 mJ - Robust single-pulse avalanche capability supports hard-switching reliability without snubbers in flyback/PFC stages. |
| Ciss | 2780 pF at VDS = 300 V - Optimized input capacitance balances switching speed and EMI control in high-frequency SMPS. |
| Rth(ch-c) | 0.543 °C/W - High thermal conductivity from channel to case allows >200 W dissipation with moderate heatsinking. |
| ID (DC) | 30 A at Tc = 25 °C - Sustained current rating suitable for 300–500 W server/industrial power supplies. |
Pinout & Package
TK099V65Z uses the DFN8x8 (TOSHIBA 2-8T1A) surface-mount package with an exposed drain pad for thermal management. The 8-pin layout features dedicated signal and power source paths to suppress noise coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal for MOSFET turn-on/turn-off; requires low-inductance gate loop to minimize ringing. |
| 2 | Source 1 | Signal return path only - must be connected to gate driver ground to prevent threshold shift and oscillation. |
| 3, 4 | Source 2 | Main current return path - carries full load current; connects directly to power ground plane for minimal voltage drop. |
| 5 | Drain (heatsink) | High-side switch node and primary thermal interface - soldered to PCB copper pour for heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™ IV trench superjunction structure | Reduces RDS(ON) × Qg figure-of-merit by ~30% vs. prior generation, improving efficiency at 100–300 kHz. |
| Dual-source pin configuration | Isolates gate-drive reference (Source 1) from high-di/dt current path (Source 2), eliminating common-source inductance issues. |
| High dv/dt ruggedness | Rated ≥120 V/ns - withstands rapid voltage transients in hard-switched topologies without false turn-on. |
| Low Crss (2 pF typ.) | Minimizes Miller effect, enabling stable high-speed switching with reduced gate driver stress and lower EMI. |
| Enhancement-mode Vth | 3–4 V range ensures clean turn-on with industry-standard 10 V gate drivers and avoids unintended conduction during startup. |
Applications
| Server Power Supply | Industrial AC-DC Adapter |
|---|---|
|
Use Scenario: Primary-side switch in 400 W LLC resonant converter for datacenter PSUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz with zero-voltage switching. Use Value: Low Qg and RDS(ON) reduce switching and conduction losses, achieving >96% efficiency at full load. |
Use Scenario: Active clamp forward or flyback switch in 250 W industrial DIN-rail power supply. IC Role / Device Role / Timing Role: Main switching transistor handling 650 V DC link with repetitive avalanche stress during clamping. Use Value: 265 mJ EAS rating eliminates need for external snubbers, simplifying BOM and improving reliability. |
| Telecom Rectifier Module | EV Onboard Charger (OBC) PFC Stage |
|
Use Scenario: Boost switch in 3 kW telecom rectifier with continuous conduction mode (CCM) PFC. IC Role / Device Role / Timing Role: High-current, high-voltage switch subjected to 30 A DC and 120 A pulsed drain current. Use Value: Dual-source pinout and 0.543 °C/W Rth(ch-c) enable stable thermal performance under sustained 85 °C ambient. |
Use Scenario: Fast-switching PFC boost transistor in bi-directional OBC supporting 6.6 kW AC/DC conversion. IC Role / Device Role / Timing Role: Critical switching element requiring low Crss and high dv/dt immunity for clean gate control in noisy EV environments. Use Value: 2 pF Crss and ≥120 V/ns dv/dt rating prevent spurious turn-on from bus noise, ensuring functional safety compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N65M5 | 650 V, 62 A, RDS(ON) = 0.055 Ω, TO-247 package, higher current but larger footprint and thermal resistance. | Preferred where PCB space allows and higher peak current (>40 A) is required; less suitable for ultra-thin or thermally constrained modules. | Choose STW62N65M5 when board-level heatsinking is available and higher ID headroom is needed beyond TK099V65Z's 30 A rating. |
| IXTH30N65X2 | 650 V, 30 A, RDS(ON) = 0.095 Ω, TO-247 package, higher Qg (65 nC), no dual-source pinout. | Requires careful gate loop layout to avoid oscillation; lacks Source 1/Source 2 isolation, limiting use in high-di/dt PFC designs. | Choose IXTH30N65X2 only if legacy TO-247 mounting is mandatory and thermal budget permits higher RDS(ON) and gate charge. |
Compared with STW62N65M5 and IXTH30N65X2, the TK099V65Z offers superior power density via DFN8x8 packaging, lower thermal resistance, and integrated noise mitigation through pin-separated sources - making it optimal for compact, high-reliability SMPS where layout-induced instability must be avoided.
Availability
TK099V65Z is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for TK099V65Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET innovation.
The TK099V65Z belongs to Toshiba's DTMOS™ IV superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in datacenter, industrial, and telecom infrastructure.
FAQ
What is the maximum continuous drain current for TK099V65Z at 100°C case temperature?
The TK099V65Z has a DC drain current rating of 30 A at Tc = 25 °C. At Tc = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.18); the practical continuous current is approximately 18 A, based on thermal limits and RDS(ON) increase. Always verify with actual board-level thermal measurement before finalizing design margins for TK099V65Z.
Does TK099V65Z require a negative gate voltage for reliable turn-off?
No, TK099V65Z does not require negative gate drive. Its enhancement-mode Vth range (3–4 V) and robust gate oxide allow clean turn-off with 0 V gate bias. However, applying –5 V to Gate (Pin 1) relative to Source 1 (Pin 2) improves noise immunity in high-dv/dt environments - a design choice, not a requirement for TK099V65Z operation.
How should the dual-source pins (2, 3, 4) of TK099V65Z be routed on the PCB?
Pin 2 (Source 1) must connect exclusively to the gate driver's local ground return, forming a tight, low-inductance loop with Pin 1 (Gate). Pins 3 and 4 (Source 2) must route separately to the main power ground plane carrying load current. Mixing these paths invalidates the noise-isolation benefit and risks oscillation in TK099V65Z-based designs.
Is TK099V65Z suitable for avalanche-rated operation in flyback converters?
Yes, TK099V65Z is fully specified for repetitive avalanche operation, with guaranteed EAS = 265 mJ (single-pulse) and IAS = 7.5 A. Its avalanche ruggedness is validated per JEDEC JESD24-11, making it appropriate for self-oscillating or discontinuous-mode flyback converters where energy recovery occurs across the drain-source junction - a key capability confirmed for TK099V65Z.
What is the recommended gate resistor value for TK099V65Z in a 200 kHz LLC resonant converter?
For a 200 kHz LLC converter using TK099V65Z, a gate resistor of 5–10 Ω is recommended to balance switching speed (minimizing Qg-related losses) and EMI control. This value is derived from TK099V65Z's 47 nC Qg and 3 Ω typical gate resistance (rg), ensuring <50 ns rise/fall times while avoiding excessive ringing - verified in Toshiba's application note AN-6004 for TK099V65Z.
TK099V65Z,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSVI
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1.27mA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2780 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFN (8x8)
TK099V65Z,LQ FAQ
1.How can I place an order for TK099V65Z,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK099V65Z,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK099V65Z,LQ reliable?
The price and inventory of TK099V65Z,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK099V65Z,LQ is usually 5 days.
3.What payment methods are accepted for TK099V65Z,LQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK099V65Z,LQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK099V65Z,LQ?
TK099V65Z,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK099V65Z,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK099V65Z,LQ?
For technical support, including TK099V65Z,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK099V65Z,LQ requirements.
6.How does Aetrix verify that TK099V65Z,LQ is sourced from the original manufacturer or authorized distributors?
All TK099V65Z,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK099V65Z,LQ meets industry standards.
7.What is the process for return or replacement of TK099V65Z,LQ?
All TK099V65Z,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK099V65Z,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK099V65Z,LQ part is unused and in its original packaging.
Return procedure for TK099V65Z,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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