Toshiba Semiconductor and Storage TK100A06N1,S4X

Overview

TK100A06N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 60 V V_DSS, 263 A I_D (DC), and ultra-low 2.2 mΩ R_DS(ON) at V_GS = 10 V, enabling high-efficiency operation in industrial switching voltage regulators.

For engineers reviewing the TK100A06N1,S4X datasheet, TK100A06N1,S4X pinout, TK100A06N1,S4X application, or TK100A06N1,S4X equivalent, key selection factors include its TO-220SIS package thermal performance (R_th(ch-c) = 2.77 °C/W), avalanche energy rating (E_AS = 413 mJ), and gate charge profile (Q_g = 140 nC) for hard-switching SMPS designs.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction and switching losses simultaneously. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while low Crss (50 pF) supports stable high-frequency operation up to 500 kHz in synchronous buck converters.

The integrated body diode exhibits t_rr = 100 ns and Q_rr = 220 nC under specified conditions, making it suitable for freewheeling in non-isolated topologies. Thermal design must respect the 150 °C channel temperature limit and derate power dissipation above T_c = 25 °C per the guaranteed PD vs. T_c curve.

Key Specifications

Pinout & Package

TK100A06N1,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated drain tab, enabling direct mounting to heatsinks without insulating hardware. The package weighs 1.7 g and features a 2-10U1S footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STL220N6F7 and IXTH100N60L2, the TK100A06N1,S4X uniquely balances ultra-low on-resistance, high DC current capability, and industry-leading avalanche energy-making it the preferred choice for 48–60 V, >200 A switching applications where thermal density and transient robustness are critical.

Availability

TK100A06N1,S4X is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for TK100A06N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability.

The TK100A06N1,S4X belongs to Toshiba's U-MOSⅧ-H high-current MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for TK100A06N1,S4X at 100 °C case temperature?

The TK100A06N1,S4X supports 100 A DC drain current at T_c = 100 °C, as defined by its absolute maximum rating table and thermal derating curve. This reflects silicon-limited current capacity under elevated thermal conditions, distinct from the 263 A rating at T_c = 25 °C. Engineers must verify heatsink performance to maintain T_c ≤100 °C for this operational point.

Does TK100A06N1,S4X have a built-in body diode, and what are its key recovery characteristics?

Yes, the TK100A06N1,S4X integrates a fast-recovery body diode with t_rr = 100 ns and Q_rr = 220 nC under specified test conditions (IDR = 100 A, –dIDR/dt = 100 A/µs). These values enable efficient synchronous rectification in hard-switched topologies and reduce reverse recovery loss compared to standard MOSFETs, directly improving light-load efficiency in the TK100A06N1,S4X-based design.

Can TK100A06N1,S4X be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK100A06N1,S4X is rated for single-pulse avalanche operation with E_AS = 413 mJ at T_ch = 25 °C. This specification is validated per JEDEC standards and allows controlled energy absorption during inductive switching events-such as those in boost or flyback converters-without device failure, provided channel temperature remains within 150 °C limits during the pulse.

What is the gate threshold voltage range for TK100A06N1,S4X, and how does it affect drive circuit design?

The TK100A06N1,S4X has a gate threshold voltage V_th of 2.0–4.0 V at V_DS = 10 V and I_D = 1.0 mA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers, but mandates sufficient gate overdrive (≥10 V) to achieve the specified 2.2 mΩ R_DS(ON). Drive circuits must deliver adequate peak current to charge Q_g = 140 nC within target switching times for the TK100A06N1,S4X.

Is TK100A06N1,S4X RoHS compliant, and what marking indicates compliance?

Yes, TK100A06N1,S4X is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-underlined markings indicate lead-containing versions. Customers should verify marking format on received units and consult Toshiba's environmental compliance documentation for TK100A06N1,S4X to ensure regulatory alignment.