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Toshiba Semiconductor and Storage TK100A10N1,S4X
- Part No.:
- TK100A10N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK100A10N1,S4X.pdf
- Description:
- MOSFET N-CH 100V 100A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:17
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Product details
Overview
TK100A10N1,S4X from Toshiba is a silicon N-channel U-MOSⅧ-H power MOSFET designed for high-current DC-DC switching applications. It delivers 100 V drain-source breakdown voltage, 3.1 mΩ typical RDS(ON) at VGS = 10 V, and 207 A DC drain current capability in a TO-220SIS package - enabling efficient operation in industrial switching voltage regulators.
For engineers reviewing the TK100A10N1,S4X datasheet, TK100A10N1,S4X pinout, TK100A10N1,S4X application, or TK100A10N1,S4X equivalent, key selection criteria include its low conduction loss, avalanche energy rating (222 mJ), gate charge profile (140 nC total), and thermal resistance (2.77 °C/W channel-to-case) under high-power continuous operation.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve enhanced cell density and reduced on-resistance while maintaining robust avalanche ruggedness. Its enhancement-mode threshold (2.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.
The device integrates an intrinsic body diode with 93 ns reverse recovery time and 220 nC reverse recovery charge, supporting synchronous rectification and hard-switched topologies. Thermal design must respect the 150 °C maximum channel temperature limit and derate power dissipation above Tc = 25 °C per the guaranteed Rth(ch-c) = 2.77 °C/W curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports input rails up to 80 V DC in buck converters without derating |
| RDS(ON) (typ.) | 3.1 mΩ at VGS = 10 V - enables <1.6 W conduction loss at 50 A continuous current |
| ID (DC) | 207 A at Tc = 25 °C - requires heatsinking for sustained >100 A operation |
| EAS | 222 mJ - withstands single-pulse inductive energy in motor drive or SMPS fault conditions |
| Qg | 140 nC - determines gate driver current requirement (~1.4 A peak for 100 ns turn-on) |
| Ciss | 8800 pF - impacts high-frequency switching losses and EMI filter sizing |
| Rth(ch-c) | 2.77 °C/W - defines minimum heatsink thermal resistance needed to hold Tch ≤ 150 °C |
Pinout & Package
TK100A10N1,S4X uses the TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package - a surface-mount compatible variant of TO-220 with isolated drain tab and 1.7 g mass. The package provides mechanical stability for high-current PCB mounting and direct thermal coupling to heatsinks via the exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≥10 V drive for full enhancement; sensitive to ESD (±0.1 µA leakage max) |
| 2 | Drain | Main high-side current path; electrically connected to metal tab for thermal/structural anchoring |
| 3 | Source | Power return node; referenced to gate drive ground; carries full load current and diode recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 3.1 mΩ typ. at 10 V gate drive reduces conduction loss by >30% vs. legacy U-MOS VI devices |
| Avalanche-rated structure | 222 mJ single-pulse energy rating allows safe operation during inductive load switching transients |
| Fast body diode | 93 ns trr and 220 nC Qrr minimize dead-time losses in synchronous rectifier configurations |
| Thermally optimized package | TO-220SIS isolates drain from PCB ground plane while delivering 2.77 °C/W channel-to-case resistance |
Applications
| Industrial Switching Regulators | Server VRMs |
|---|---|
Use Scenario: High-efficiency 48 V to 12 V intermediate bus conversion in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 200–500 kHz. Use Value: 3.1 mΩ RDS(ON) limits conduction loss to <1.6 W at 50 A, enabling >95% efficiency without forced air cooling. | Use Scenario: Core voltage regulation for multi-core Xeon processors in rack-mounted servers. IC Role / Device Role / Timing Role: High-current phase-leg switch in multiphase buck converter with 100 A+ per phase. Use Value: 207 A DC rating and 2.77 °C/W thermal resistance support sustained 120 A operation with <15 °C temperature rise over heatsink. |
| Motor Drive Inverters | Renewable Energy Converters |
Use Scenario: Half-bridge leg in 3 kW brushless DC motor drive for HVAC compressors. IC Role / Device Role / Timing Role: Low-side switching element handling 100 A pulsed current with fast diode recovery. Use Value: 93 ns trr and 220 nC Qrr reduce cross-conduction losses during PWM dead-time, improving thermal margin by 8–10 °C. | Use Scenario: DC-DC stage in solar microinverter power stage converting PV array output to 400 V DC bus. IC Role / Device Role / Timing Role: High-voltage switch in non-isolated boost converter operating at 100 kHz. Use Value: 100 V VDSS and 222 mJ EAS ensure reliability against PV string voltage surges and lightning-induced transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW100N10F7 | 100 V, 100 A, RDS(ON) = 4.5 mΩ (typ.), TO-247 package, lower Qg (95 nC) | Higher RDS(ON) increases conduction loss by ~45% at 50 A; larger TO-247 footprint | Prefer when gate drive strength is limited and layout space permits larger package |
| IXFH100N10P | 100 V, 100 A, RDS(ON) = 4.2 mΩ (typ.), TO-247 package, higher EAS (300 mJ) | Lower current rating and higher on-resistance; superior avalanche ruggedness but less efficient at high DC load | Prefer for ultra-rugged industrial inverters where transient immunity outweighs efficiency needs |
Compared with STW100N10F7 and IXFH100N10P, TK100A10N1,S4X offers the lowest RDS(ON) and highest DC current rating in a compact TO-220SIS form factor - making it optimal for space-constrained, high-efficiency power stages where thermal management leverages the isolated drain tab.
Availability
TK100A10N1,S4X is available at Aetrix Electronics and suitable for industrial switching regulators, server VRMs, motor drive inverters, and renewable energy converters requiring stable component supply across extended production lifecycles.
Supply support for TK100A10N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions with emphasis on energy efficiency and industrial reliability.
TK100A10N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in industrial and computing infrastructure applications.
FAQ
What is the maximum continuous drain current rating for TK100A10N1,S4X?
The TK100A10N1,S4X has a DC drain current rating of 207 A at case temperature Tc = 25 °C. This rating assumes ideal heatsinking and derates linearly with increasing case temperature - dropping to approximately 100 A at Tc = 100 °C per the Safe Operating Area curve. The package limit is 100 A, but the silicon die supports higher current under controlled thermal conditions.
Does TK100A10N1,S4X have avalanche capability, and how is it specified?
Yes, TK100A10N1,S4X is fully rated for single-pulse avalanche energy: EAS = 222 mJ at VDD = 80 V, Tch = 25 °C, L = 17.1 µH, and IAR = 100 A. This specification confirms ruggedness against inductive switching transients in motor drives and SMPS applications - verified per JEDEC JESD24-1 test methodology.
What is the gate threshold voltage range for TK100A10N1,S4X, and why does it matter?
The TK100A10N1,S4X has a gate threshold voltage Vth of 2.0–4.0 V (measured at VDS = 10 V, ID = 1.0 mA). This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental conduction from noise - critical for stable operation in high-noise industrial environments where the TK100A10N1,S4X is commonly deployed.
How does the TO-220SIS package of TK100A10N1,S4X differ from standard TO-220?
The TO-220SIS package used by TK100A10N1,S4X features electrical isolation between the drain tab and mounting surface - unlike standard TO-220 where the tab is internally connected to drain and requires insulating hardware. This eliminates need for mica washers or silicone pads, simplifies thermal interface design, and improves long-term reliability in high-vibration industrial systems using TK100A10N1,S4X.
Is TK100A10N1,S4X RoHS compliant, and what marking indicates compliance?
Yes, TK100A10N1,S4X is RoHS compliant. Compliance is indicated by underlined lot numbers on the device marking, which denote [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-underlined markings indicate lead-containing versions. Full environmental data, including REACH and halogen-free status, is available through Toshiba's official product documentation for TK100A10N1,S4X.
TK100A10N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8800 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK100A10N1,S4X FAQ
1.How can I place an order for TK100A10N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK100A10N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK100A10N1,S4X reliable?
The price and inventory of TK100A10N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK100A10N1,S4X is usually 5 days.
3.What payment methods are accepted for TK100A10N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK100A10N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK100A10N1,S4X?
TK100A10N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK100A10N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK100A10N1,S4X?
For technical support, including TK100A10N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK100A10N1,S4X requirements.
6.How does Aetrix verify that TK100A10N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK100A10N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK100A10N1,S4X meets industry standards.
7.What is the process for return or replacement of TK100A10N1,S4X?
All TK100A10N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK100A10N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK100A10N1,S4X part is unused and in its original packaging.
Return procedure for TK100A10N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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