Toshiba Semiconductor and Storage TK100E06N1,S1X

Overview

TK100E06N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H technology, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 60 V V_DSS, 263 A I_D (DC), R_DS(ON) = 1.9 mΩ (typ. at V_GS = 10 V), and operates with T_ch up to 150 °C in TO-220 package.

For engineers reviewing the TK100E06N1,S1X datasheet, TK100E06N1,S1X pinout, TK100E06N1,S1X application, or TK100E06N1,S1X equivalent, key selection criteria include low conduction loss under high-current DC operation, avalanche ruggedness (E_AS = 413 mJ), thermal resistance (R_th(ch-c) = 0.49 °C/W), and gate charge profile for hard-switched SMPS designs.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve ultra-low R_DS(ON) while maintaining robust avalanche capability and fast switching. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drive, and its integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device features low C_iss (10,500 pF) and C_oss (3,500 pF) at V_DS = 30 V, enabling efficient high-frequency operation up to ~100 kHz in industrial power supplies. Gate resistance (r_g = 3.0 Ω) and Q_g = 140 nC support controlled dV/dt and reduced EMI in hard-switched applications.

Key Specifications

Pinout & Package

TK100E06N1,S1X is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with drain connected internally to the metal tab for direct heatsink mounting. The package weighs 1.93 g and features creepage/clearance compliant with industrial safety standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXTH100N60L2 and STW100N60DM6, TK100E06N1,S1X offers the lowest R_DS(ON) in a through-hole TO-220, delivering superior conduction efficiency in thermally managed high-current DC-DC stages-but requires manual assembly and careful heatsink mounting versus surface-mount alternatives.

Availability

TK100E06N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-lifecycle support.

Supply support for TK100E06N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, analog ICs, and storage solutions, with decades of expertise in discrete power MOSFET design and reliability engineering.

TK100E06N1,S1X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in industrial, telecom, and computing infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK100E06N1,S1X?

The TK100E06N1,S1X is rated for 263 A DC drain current at case temperature T_c = 25 °C with proper heatsinking. This rating reflects silicon-limited current capacity; the TO-220 package itself is rated for 100 A continuous, so thermal design must ensure channel temperature remains ≤150 °C under actual operating conditions. Derating is required above 25 °C case temperature per the R_th(ch-c) = 0.49 °C/W specification.

Does TK100E06N1,S1X have avalanche capability, and how is it specified?

Yes, TK100E06N1,S1X is fully rated for single-pulse avalanche operation with E_AS = 413 mJ at T_ch = 25 °C. This value is measured under standardized conditions (V_DD = 48 V, L = 31.8 µH, I_AR = 100 A) and guarantees ruggedness against inductive switching stress. The device does not require external avalanche protection in properly designed motor drive or PFC circuits where unclamped inductive energy falls within this limit.

What is the gate threshold voltage range for TK100E06N1,S1X, and how does it affect drive requirements?

The TK100E06N1,S1X has a gate threshold voltage V_th of 2.0–4.0 V (measured at V_DS = 10 V, I_D = 1.0 mA). This wide range ensures turn-on compatibility with both 3.3 V and 5 V logic controllers when combined with appropriate gate driving-though full enhancement to R_DS(ON) = 1.9 mΩ requires V_GS ≥ 10 V. Designers must verify gate drive overshoot stays within ±20 V absolute maximum rating.

Can TK100E06N1,S1X be used in synchronous rectification applications?

Yes, TK100E06N1,S1X supports synchronous rectification due to its low R_DS(ON) and fast intrinsic body diode (t_rr = 100 ns, Q_rr = 220 nC). Its V_DSF = −1.2 V (at I_DR = 100 A) provides lower forward drop than Schottky diodes in high-current secondary-side DC-DC converters. However, precise gate timing control is essential to avoid shoot-through, especially in LLC or phase-shifted full-bridge topologies.

What thermal resistance values apply to TK100E06N1,S1X, and how should they guide heatsink selection?

TK100E06N1,S1X specifies R_th(ch-c) = 0.49 °C/W (channel-to-case) and R_th(ch-a) = 83.3 °C/W (channel-to-ambient, no heatsink). For practical use, the critical parameter is R_th(ch-c): it defines the thermal path from junction to heatsink mounting surface. To maintain T_ch ≤ 150 °C at 263 A, total system thermal resistance (heatsink + interface + mounting) must be ≤ (150 − T_amb) / P_loss; typical designs target ≤ 0.5 °C/W total from channel to ambient via high-performance heatsinks and thermal interface materials.