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Toshiba Semiconductor and Storage TK100S04N1L,LQ
- Part No.:
- TK100S04N1L,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK100S04N1L,LQ.pdf
- Description:
- MOSFET N-CH 40V 100A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,842
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Product details
Overview
TK100S04N1L from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current automotive switching. It delivers 100 A DC drain current, 40 V drain-source voltage rating, and ultra-low 1.9 mΩ RDS(ON) at VGS = 10 V, enabling efficient operation in motor drivers and DC-DC converters.
For engineers reviewing the TK100S04N1L datasheet, TK100S04N1L pinout, TK100S04N1L application, or TK100S04N1L equivalent, key selection criteria include its DPAK+ package thermal performance (Rth(ch-c) = 0.83 °C/W), avalanche energy rating (EAS = 114 mJ), and gate threshold range (1.5–2.5 V) for robust drive compatibility in harsh environments.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction loss while maintaining fast switching with low Qg (76 nC) and optimized Ciss/Crss ratio (5490 pF / 220 pF). Its enhancement-mode operation and 200 A pulsed drain capability support high-efficiency synchronous rectification and PWM-controlled loads.
The device integrates a built-in body diode with 90 ns reverse recovery time and 90 nC Qrr, enabling reliable freewheeling in inductive switching applications. Thermal design is anchored by its 180 W power dissipation at Tc = 25 °C and guaranteed channel temperature limit of 175 °C per AEC-Q101 qualification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V automotive systems and industrial SMPS inputs. |
| RDS(ON) (typ.) | 1.9 mΩ at VGS = 10 V - Enables <1.9 W conduction loss at 100 A, reducing heatsink requirements. |
| ID (DC) | 100 A - Supports high-power motor phases and primary-side switches in >5 kW converters. |
| EAS | 114 mJ - Withstands single-pulse inductive energy without failure, critical for relay replacement and H-bridge protection. |
| Rth(ch-c) | 0.83 °C/W - Allows direct mounting to heatsinks for sustained 100 A operation without derating below 100 °C case temperature. |
| Qg | 76 nC - Optimized for standard 12 V gate drivers; enables <80 ns turn-off with 1 Ω gate resistor. |
| Vth | 1.5–2.5 V - Ensures clean turn-on with 3.3 V or 5 V logic-level controllers, avoiding partial conduction in noisy environments. |
Pinout & Package
TK100S04N1L uses the DPAK+ (TOSHIBA 2-7M1A) surface-mount package with exposed drain pad for thermal and electrical connection. The package weighs 0.36 g and supports reflow soldering per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal requiring ≤±20 V gate-source voltage; low input capacitance (Ciss = 5490 pF) eases driver selection. |
| 2 | Drain (D) / Heatsink | High-current output node electrically connected to the exposed copper pad; must be thermally coupled to PCB copper or external heatsink. |
| 3 | Source (S) | Reference node for gate drive and current sensing; connects to low-side return path in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including temperature cycling, humidity bias, and mechanical shock per Rev. G test plan. |
| Ultra-low RDS(ON) | 1.9 mΩ typ. at 10 V drive reduces I²R losses by >30% vs. legacy DPAK MOSFETs in 48 V battery systems. |
| Robust avalanche capability | 114 mJ single-pulse EAS allows safe operation during load dump or inductive kick without external snubbers. |
| Low Qgd/Qg ratio | 11 nC / 76 nC = 0.14 - Minimizes Miller-induced shoot-through risk in high-frequency bridge topologies. |
| Fast body diode recovery | 90 ns trr and 90 nC Qrr reduce switching loss and voltage overshoot in synchronous rectifier mode. |
Applications
| Automotive Motor Control | High-Current DC-DC Converters |
|---|---|
|
Use Scenario: Driving 12 V/24 V brushed DC motors in power seats, HVAC blowers, and window lift modules. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, handling bidirectional 100 A peak currents with PWM up to 20 kHz. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle life; 1.9 mΩ RDS(ON) cuts heat generation by 40% vs. prior-generation parts. |
Use Scenario: Primary-side synchronous rectifier in 48 V–12 V buck converters for ADAS domain controllers. IC Role / Device Role / Timing Role: High-current power switch operating at 300 kHz with 50 A continuous conduction mode. Use Value: 0.83 °C/W thermal resistance enables direct PCB copper cooling-eliminating discrete heatsinks in space-constrained ECUs. |
| Industrial Motor Drives | Switching Voltage Regulators |
|
Use Scenario: Inverter leg switch in 3-phase BLDC drives for pumps and compressors rated up to 5 kW. IC Role / Device Role / Timing Role: High-side or low-side switch with 200 A pulsed capability supporting short-circuit withstand time >2 µs. Use Value: 114 mJ avalanche energy prevents failure during bus overvoltage events caused by regenerative braking. |
Use Scenario: Main switching element in high-efficiency 40 V input VRMs for server CPU/GPU power delivery. IC Role / Device Role / Timing Role: Power stage MOSFET in multiphase buck topology with gate drive synchronized to 1 MHz PWM controller. Use Value: 76 nC total gate charge enables efficient drive with integrated SiP gate drivers, reducing layout complexity and EMI. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF8AG | 40 V, 220 A, RDS(ON) = 1.4 mΩ (VGS = 10 V); DFN8 5×6 mm package; no AEC-Q101 certification. | Higher current rating but larger footprint; lacks automotive qualification and lower thermal resistance (Rth(ch-c) = 1.2 °C/W). | Preferred for non-automotive high-power industrial converters where board area permits larger package and qualification is not required. |
| IRF100N04LPBF | 40 V, 100 A, RDS(ON) = 3.2 mΩ (VGS = 10 V); TO-220AB package; AEC-Q101 not claimed. | Same current rating but higher on-resistance increases conduction loss by 68%; through-hole mounting limits density and thermal performance. | Suitable for cost-sensitive prototyping or legacy designs using through-hole assembly; avoid in thermally constrained or automotive production. |
Compared with STL220N4LF8AG and IRF100N04LPBF, the TK100S04N1L uniquely balances AEC-Q101 compliance, DPAK+ thermal efficiency (0.83 °C/W), and 1.9 mΩ conduction loss-making it the only qualified option for space- and thermal-constrained automotive motor control where reliability and efficiency are co-prioritized.
Availability
TK100S04N1L is available at Aetrix Electronics and suitable for automotive motor control, high-current DC-DC converters, and industrial motor drives requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for TK100S04N1L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, with core expertise in power devices, logic ICs, and storage solutions for automotive, industrial, and consumer markets.
The TK100S04N1L belongs to Toshiba's U-MOSⅧ-H automotive-qualified power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in engine control units, electric power steering, and battery management systems.
FAQ
What is the maximum continuous drain current rating for TK100S04N1L?
The TK100S04N1L is rated for 100 A DC drain current at Tc = 25 °C. This rating assumes proper heatsinking via the exposed drain pad; actual usable current decreases with rising case temperature per the SOA curve in Figure 8.13. At Tc = 100 °C, the device supports ~65 A continuously without exceeding its 175 °C channel temperature limit.
Is TK100S04N1L suitable for 12 V automotive battery applications?
Yes, the TK100S04N1L is explicitly qualified to AEC-Q101 and rated for 40 V VDSS, making it appropriate for 12 V nominal systems-including those subject to load dump transients up to 35 V. Its 1.9 mΩ RDS(ON) minimizes voltage drop and heating during cranking conditions, and its 114 mJ avalanche rating handles inductive energy safely.
What gate drive voltage is required to fully enhance TK100S04N1L?
The TK100S04N1L has a gate threshold voltage (Vth) range of 1.5–2.5 V, but full enhancement requires VGS ≥ 10 V to achieve its specified 1.9 mΩ RDS(ON). At VGS = 4.5 V, RDS(ON) rises to 4.5 mΩ (max), so 10 V drive is recommended for minimal conduction loss in high-current applications.
Does TK100S04N1L include an integrated body diode, and what are its recovery characteristics?
Yes, the TK100S04N1L features a monolithic body diode with reverse recovery time (trr) of 90 ns and reverse recovery charge (Qrr) of 90 nC at Ta = 25 °C. These values are measured under standardized conditions (IDR = 100 A, dI/dt = 50 A/µs) and enable efficient freewheeling in hard-switched topologies without external diodes.
What is the thermal resistance from channel to case (Rth(ch-c)) for TK100S04N1L, and how should it be used in thermal design?
The TK100S04N1L has a maximum channel-to-case thermal resistance of 0.83 °C/W. This value applies when the drain pad is soldered to ≥10 cm² of 2 oz copper with thermal vias. Designers must ensure the heatsink or PCB interface maintains this thermal path; exceeding 175 °C channel temperature invalidates AEC-Q101 qualification and risks premature failure.
TK100S04N1L,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 76 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5490 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK100S04N1L,LQ FAQ
1.How can I place an order for TK100S04N1L,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK100S04N1L,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK100S04N1L,LQ reliable?
The price and inventory of TK100S04N1L,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK100S04N1L,LQ is usually 5 days.
3.What payment methods are accepted for TK100S04N1L,LQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK100S04N1L,LQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK100S04N1L,LQ?
TK100S04N1L,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK100S04N1L,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK100S04N1L,LQ?
For technical support, including TK100S04N1L,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK100S04N1L,LQ requirements.
6.How does Aetrix verify that TK100S04N1L,LQ is sourced from the original manufacturer or authorized distributors?
All TK100S04N1L,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK100S04N1L,LQ meets industry standards.
7.What is the process for return or replacement of TK100S04N1L,LQ?
All TK100S04N1L,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK100S04N1L,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK100S04N1L,LQ part is unused and in its original packaging.
Return procedure for TK100S04N1L,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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