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Toshiba Semiconductor and Storage TK10A50D(STA4,Q,M)

Part No.:
TK10A50D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixTK10A50D(STA4,Q,M).pdf
Description:
MOSFET N-CH 500V 10A TO220SIS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,460

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Product details

Overview

TK10A50D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It delivers 500 V drain-source breakdown voltage, 10 A continuous drain current, and low 0.62 Ω (typ.) RDS(on) at VGS = 10 V, enabling efficient DC-DC conversion in industrial SMPS designs.

For engineers reviewing the TK10A50D(STA4,Q,M) datasheet, TK10A50D(STA4,Q,M) pinout, TK10A50D(STA4,Q,M) application, or TK10A50D(STA4,Q,M) equivalent, key selection criteria include avalanche energy rating (264 mJ), gate charge (20 nC), thermal resistance (2.78 °C/W channel-to-case), and RoHS-compliant SC-67 package compatibility with high-reliability power stages.

Technical Context

This MOSFET employs a planar vertical structure optimized for rugged unclamped inductive switching, supporting single-pulse avalanche operation up to 264 mJ at Tch = 25°C. Its enhancement-mode threshold (2.0–4.0 V) and 5.0 S forward transfer admittance enable robust gate drive compatibility with standard 10 V logic-level controllers.

The device integrates an intrinsic body diode with 1.7 V forward voltage at 10 A and 1300 ns reverse recovery time, making it suitable for freewheeling paths in flyback and forward converters where controlled diode conduction is required without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS500 V - supports input voltages up to 400 V DC in offline SMPS without derating
RDS(on)0.62 Ω (typ.) at VGS = 10 V - limits conduction loss to ≤3.1 W at 10 A continuous
ID (continuous)10 A - enables ≥120 W output in 200 kHz hard-switched converters with proper heatsinking
EAS264 mJ - withstands single inductive energy spikes in PFC and LLC primary switches
Qg20 nC - compatible with standard gate drivers delivering ≥1 A peak current for <60 ns turn-on
Rth(ch-c)2.78 °C/W - requires minimum 12 cm² copper area (2 oz) for 150°C channel temp at 45 W dissipation
Vth2.0–4.0 V - ensures reliable turn-on with 5 V or 10 V gate drive while avoiding false triggering

Pinout & Package

Package: SC-67 (JEITA), also designated 2-10U1B by Toshiba; thermally enhanced TO-220AB variant with isolated tab; weight 1.7 g.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives gate drive signal; 20 nC total charge requires low-impedance driver path to minimize switching loss
2 (Drain)High-side power nodeConnected to primary winding or bus rail; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential
3 (Source)Reference node / return pathServes as common reference for gate drive and current sensing; low-inductance layout critical for EMI control

Key Features

FeatureDesign Value
Low RDS(on)0.62 Ω typ. reduces I²R losses by >35% vs. comparable 500 V MOSFETs, improving full-load efficiency in 100–200 W SMPS
High |Yfs|5.0 S typ. provides strong transconductance for stable closed-loop regulation under wide load transients
Avalanche-rated264 mJ single-pulse rating allows safe operation in non-clamped topologies like flyback without snubber redesign
Low leakageIDSS ≤10 μA at 500 V ensures minimal standby power loss in always-on auxiliary supplies

Applications

Industrial SMPSAC-DC Adapters

Use Scenario: 150 W open-frame power supply for PLC I/O modules operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter.

Use Value: 0.62 Ω RDS(on) and 264 mJ EAS enable >88% efficiency at full load and reliable unclamped turn-off during line surges.

Use Scenario: 65 W universal-input laptop adapter with integrated PFC + LLC stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC pre-regulator stage.

Use Value: 500 V VDSS and 10 A ID support 90–264 V AC operation with margin; 20 nC Qg enables 100 kHz PFC switching with low driver loss.

LED Driver Power StagesMotor Control H-Bridge Legs

Use Scenario: Constant-current 100 W LED driver for street lighting with active cooling.

IC Role / Device Role / Timing Role: Main switch in buck-boost topology driving 36–48 V LED strings.

Use Value: 1300 ns trr and −1.7 V VDSF of integrated body diode reduce dead-time losses and eliminate need for external fast recovery diode.

Use Scenario: 24 V/5 A brushed DC motor driver in automated gate controller.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with opto-isolated gate drive.

Use Value: 2.0–4.0 V Vth ensures clean turn-on with 3.3 V microcontroller GPIO; 10 μA IDSS prevents unintended conduction during sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP10NK50ZFP500 V, 10 A, RDS(on) = 0.75 Ω, EAS = 220 mJ, TO-220FP packageLower avalanche energy and higher RDS(on); no integrated diode characterization providedAcceptable for non-avalanche-critical flyback designs where thermal margin exists
IRFBC40APBF600 V, 6.2 A, RDS(on) = 1.2 Ω, EAS = 150 mJ, TO-220ABHigher voltage rating but lower current and higher on-resistance; older generation processOnly suitable when 600 V margin is mandatory and power level ≤75 W

Compared with STP10NK50ZFP and IRFBC40APBF, the TK10A50D(STA4,Q,M) offers superior avalanche ruggedness and lower conduction loss at 10 A, making it preferred for industrial SMPS where reliability under transient overload is critical.

Availability

TK10A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, LED driver power stages, and motor control H-bridge legs requiring stable component supply and long-term lifecycle support.

Supply support for TK10A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET development expertise.

The π-MOSⅦ series, including TK10A50D(STA4,Q,M), was engineered specifically for high-efficiency, high-reliability switching power supplies operating at 50–200 kHz, emphasizing avalanche capability and thermal robustness in industrial environments.

FAQ

What is the maximum continuous drain current rating for TK10A50D(STA4,Q,M) at 25°C case temperature?

The TK10A50D(STA4,Q,M) supports 10 A continuous drain current (ID) at Tc = 25°C per its Absolute Maximum Ratings table. This rating assumes adequate heatsinking to maintain channel temperature ≤150°C; actual usable current decreases linearly with rising case temperature due to thermal derating.

Does TK10A50D(STA4,Q,M) have a specified avalanche energy rating, and under what test conditions?

Yes, TK10A50D(STA4,Q,M) has a single-pulse avalanche energy rating of 264 mJ. This value is measured under defined conditions: VDD = 90 V, initial channel temperature = 25°C, inductance L = 4.49 mH, gate resistor RG = 25 Ω, and avalanche current IAR = 10 A.

What package type is used for TK10A50D(STA4,Q,M), and is the drain electrically connected to the tab?

TK10A50D(STA4,Q,M) uses the SC-67 (JEITA) package, also known as 2-10U1B, which is a variant of TO-220AB with isolated metal tab. The drain (pin 2) is electrically connected to the metal tab, requiring electrical isolation from the heatsink unless the drain node is at chassis ground potential.

What is the typical gate threshold voltage range for TK10A50D(STA4,Q,M), and how does it affect gate drive design?

The TK10A50D(STA4,Q,M) has a gate threshold voltage (Vth) range of 2.0 to 4.0 V at VDS = 10 V and ID = 1 mA. This allows reliable turn-on with 5 V logic-level drivers while preventing accidental activation from noise; gate drive should provide ≥10 V to ensure full enhancement and minimal RDS(on).

Is TK10A50D(STA4,Q,M) suitable for use in circuits requiring RoHS compliance?

Yes, TK10A50D(STA4,Q,M) is RoHS compliant, as indicated by the marking "[[G]]/RoHS COMPATIBLE" or "[[G]]/RoHS [[Pb]]" on the device body. Toshiba confirms compliance with Directive 2011/65/EU, and material declarations are available upon request through authorized distribution channels.

TK10A50D(STA4,Q,M) Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
π-MOSVII
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
720mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS

TK10A50D(STA4,Q,M) FAQ

1.How can I place an order for TK10A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10A50D(STA4,Q,M) reliable?

The price and inventory of TK10A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10A50D(STA4,Q,M) is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10A50D(STA4,Q,M) transactions.

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TK10A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10A50D(STA4,Q,M)?

For technical support, including TK10A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK10A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK10A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK10A50D(STA4,Q,M)?

All TK10A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK10A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK10A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TK10A50D(STA4,Q,M) Tags

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