Toshiba Semiconductor and Storage TK10A50W,S5X

Overview

TK10A50W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 500 V V_DSS, 9.7 A continuous drain current, R_DS(ON) = 0.327 Ω (typ.) at V_GS = 10 V, and TO-220SIS package with isolated mounting. It is used in AC-DC adapters and industrial switching regulators requiring rugged avalanche capability.

For engineers reviewing the TK10A50W datasheet, TK10A50W pinout, TK10A50W application, or TK10A50W equivalent, this page delivers verified electrical parameters, thermal limits, gate charge behavior, diode recovery characteristics, and real-world design context for high-efficiency 500 V power stage implementation.

Technical Context

The TK10A50W employs Toshiba's DTMOS™ IV super-junction structure to achieve low R_DS(ON) while maintaining high breakdown voltage and fast switching. Its enhancement-mode operation (V_th = 2.7–3.7 V) enables direct drive from standard PWM controllers without level-shifting.

It supports unclamped inductive switching with guaranteed single-pulse avalanche energy of 161 mJ and exhibits MOSFET dv/dt ruggedness ≥50 V/ns. The integrated body diode has trr = 250 ns (typ.) and Q_rr = 2.2 µC, enabling use in quasi-resonant and hard-switched topologies.

Key Specifications

Pinout & Package

TK10A50W is housed in a TO-220SIS (JEITA SC-67) package with internal isolation between drain and mounting tab, enabling direct heatsink attachment without insulating hardware. The package weighs 1.7 g and features a 0.6 N·m maximum mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP10NK50ZFP and IXTP10N50L2, the TK10A50W delivers superior thermal efficiency via lower R_DS(ON), enhanced system reliability through guaranteed 161 mJ avalanche rating, and reduced BOM count enabled by its isolated TO-220SIS package-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

TK10A50W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial power supplies, and LED drivers requiring stable component supply across extended production lifecycles.

Supply support for TK10A50W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions with over 50 years of power electronics heritage.

The TK10A50W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, medical, and infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for TK10A50W at 100°C case temperature?

The TK10A50W supports 9.7 A DC drain current at T_c = 25°C. At 100°C case temperature, derating applies per the PD–T_c curve (Fig. 8.15); the practical continuous current drops to approximately 5.2 A to maintain channel temperature ≤150°C with R_th(ch-c) = 4.17°C/W. Always verify thermal design using actual board layout and heatsink performance before finalizing.

Does TK10A50W have an isolated package, and what is its isolation voltage rating?

Yes, the TK10A50W uses the TO-220SIS package with internal isolation between the drain leadframe and the metal mounting tab. Its isolation voltage rating is 2000 V RMS, allowing direct mechanical attachment to grounded heatsinks without insulating hardware-reducing thermal resistance and assembly complexity in high-voltage power stages.

What is the typical gate threshold voltage range for TK10A50W, and how does it affect controller compatibility?

The TK10A50W has a gate threshold voltage V_th of 2.7–3.7 V (measured at V_DS = 10 V, I_D = 0.5 mA), making it compatible with standard 3.3 V and 5 V logic-level PWM controllers such as UC384x, TL494, and UCC28070. This eliminates the need for gate driver translation stages in most offline SMPS designs.

How does the body diode performance of TK10A50W compare to standard MOSFETs in quasi-resonant converters?

The TK10A50W body diode delivers t_rr = 250 ns (typ.) and Q_rr = 2.2 µC, significantly lower than legacy planar MOSFETs. In QR flyback converters, this reduces voltage spike amplitude and EMI generation during zero-voltage switching transitions, improving both efficiency and EMC compliance without requiring external Schottky catch diodes.

Is TK10A50W RoHS compliant, and what marking indicates environmental compliance?

Yes, TK10A50W is RoHS compliant. Per Toshiba's marking convention (Fig. 7.1), RoHS-compliant units feature an underlined lot number with [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-underlined units indicate lead-containing versions. Always confirm compliance status via the date code and packaging label when ordering for regulated markets.