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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK10A60W5,S5VX

Name: TK10A60W5,S5VX
Brand: Toshiba Semiconductor and Storage
SKU: TK10A60W5,S5VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK10A60W5,S5VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK10A60W5,S5VX.pdf

Description:: MOSFET N-CH 600V 9.7A TO220SIS

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Product details

Overview

TK10A60W5,S5VX from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies. It delivers 600 V V_DSS, 9.7 A continuous drain current, and low R_DS(ON) of 0.35 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in flyback and PFC stages.

For engineers reviewing the TK10A60W5,S5VX datasheet, TK10A60W5,S5VX pinout, TK10A60W5,S5VX application, or TK10A60W5,S5VX equivalent, key selection criteria include its fast reverse recovery time (t_rr = 85 ns), avalanche ruggedness (E_AS = 134 mJ), TO-220SIS package with isolated mounting, and gate threshold voltage range of 3–4.5 V for reliable drive compatibility.

Technical Context

This device implements Toshiba's DTMOS™ IV technology, utilizing a super-junction structure to achieve high breakdown voltage with low conduction loss. Its optimized charge characteristics-Q_g = 25 nC, Q_gd/Q_gs1 = 15/8 nC-support efficient hard-switching in 65–100 kHz SMPS topologies.

The integrated body diode exhibits controlled reverse recovery (t_rr = 85 ns typ., Q_rr = 0.38 µC) and dv/dt ruggedness ≥50 V/ns, reducing snubber stress and EMI in discontinuous conduction mode (DCM) flyback converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full rectified 400 VAC mains input with margin for surge and ringing.
R_DS(ON)	0.35 Ω (typ.) at V_GS = 10 V - Enables <1.7 W conduction loss at 4.9 A, critical for thermal management in compact adapters.
I_D (DC)	9.7 A at T_c = 25 °C - Supports >65 W output in single-switch flyback designs with adequate heatsinking.
t_rr	85 ns (typ.) - Minimizes diode switching loss and voltage overshoot during ZVS transitions in quasi-resonant converters.
E_AS	134 mJ - Sustains single-pulse avalanche energy without failure, improving robustness against output short-circuit transients.
R_th(ch-c)	4.17 °C/W - Allows direct thermal coupling to heatsink; enables 30 W dissipation at ΔT = 125 °C (T_ch − T_c).
V_ISO(RMS)	2000 V - Provides reinforced isolation between drain and mounting surface, meeting IEC 62368-1 creepage/clearance requirements.

Pinout & Package

TK10A60W5,S5VX is housed in a TO-220SIS (JEITA SC-67) package with electrically isolated tab (drain-connected), enabling direct heatsink mounting without insulating hardware. The package weighs 1.7 g and features gull-wing leads for through-hole PCB assembly.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control terminal; requires ≤4.5 V V_th for turn-on, compatible with standard 5 V/12 V gate drivers.
2	Drain	Main high-voltage power terminal; connected to isolated metal tab for thermal and electrical isolation from PCB ground.
3	Source	Power return path and reference for gate drive; forms common node with driver IC ground in non-isolated configurations.

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables simultaneous 600 V rating and 0.35 Ω R_DS(ON), reducing conduction loss by ~30% vs. planar MOSFETs at same voltage class.
Fast body diode recovery (t_rr = 85 ns)	Reduces switching loss and EMI in DCM flyback converters, eliminating need for external Schottky catch diodes in mid-power designs.
Isolated TO-220SIS package (V_ISO = 2000 V_RMS)	Permits direct bolt-down heatsinking without insulating pads or washers, simplifying mechanical design and improving thermal reliability.
Enhancement-mode gate (V_th = 3–4.5 V)	Ensures natural turn-off under zero-gate-voltage bias, supporting fail-safe operation in primary-side controller ICs with open-drain gate outputs.

Applications

AC-DC Adapter Power Supply	LED Driver (Offline Constant Current)
Use Scenario: 45–65 W universal-input (90–264 VAC) adapter with QR flyback topology and primary-side regulation. IC Role / Device Role / Timing Role: Primary switch handling high-voltage DC bus switching at 65–85 kHz; body diode conducts during MOSFET off-time. Use Value: Low R_DS(ON) and fast t_rr reduce total power loss to <0.8 W at full load, enabling DoE VI Tier 2 compliance without active cooling.	Use Scenario: 30–50 W constant-current LED driver for commercial downlights, operating in DCM with passive PFC. IC Role / Device Role / Timing Role: Main switching element in single-stage flyback-PFC architecture; withstands 600 V peak line transients. Use Value: Avalanche energy rating (134 mJ) absorbs inductive kickback from transformer leakage during output short events, preventing catastrophic failure.
Industrial SMPS (24 V Output)	USB PD Fast Charger (65 W)
Use Scenario: 24 V/3 A industrial power supply with overvoltage/overcurrent protection and wide ambient temperature range (−40 to +85 °C). IC Role / Device Role / Timing Role: High-side switch in primary-side regulation loop; gate driven by UC384x-series controller with bootstrap supply. Use Value: R_th(ch-c) = 4.17 °C/W allows stable operation at T_c = 85 °C with minimal heatsink, reducing BOM cost and footprint.	Use Scenario: Compact 65 W USB PD 3.0 charger using active-clamp flyback with synchronous rectification on secondary side. IC Role / Device Role / Timing Role: Primary-side power switch operating at 100 kHz with valley-switching control; handles 400 V DC bus. Use Value: Isolated TO-220SIS package eliminates need for thermal interface material, enabling thinner profile and improved manufacturability in space-constrained enclosures.

AC-DC Adapter Power Supply

LED Driver (Offline Constant Current)

Use Scenario: 45–65 W universal-input (90–264 VAC) adapter with QR flyback topology and primary-side regulation.

IC Role / Device Role / Timing Role: Primary switch handling high-voltage DC bus switching at 65–85 kHz; body diode conducts during MOSFET off-time.

Use Value: Low R_DS(ON) and fast t_rr reduce total power loss to <0.8 W at full load, enabling DoE VI Tier 2 compliance without active cooling.

Use Scenario: 30–50 W constant-current LED driver for commercial downlights, operating in DCM with passive PFC.

IC Role / Device Role / Timing Role: Main switching element in single-stage flyback-PFC architecture; withstands 600 V peak line transients.

Use Value: Avalanche energy rating (134 mJ) absorbs inductive kickback from transformer leakage during output short events, preventing catastrophic failure.

Industrial SMPS (24 V Output)

USB PD Fast Charger (65 W)

Use Scenario: 24 V/3 A industrial power supply with overvoltage/overcurrent protection and wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: High-side switch in primary-side regulation loop; gate driven by UC384x-series controller with bootstrap supply.

Use Value: R_th(ch-c) = 4.17 °C/W allows stable operation at T_c = 85 °C with minimal heatsink, reducing BOM cost and footprint.

Use Scenario: Compact 65 W USB PD 3.0 charger using active-clamp flyback with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Primary-side power switch operating at 100 kHz with valley-switching control; handles 400 V DC bus.

Use Value: Isolated TO-220SIS package eliminates need for thermal interface material, enabling thinner profile and improved manufacturability in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	600 V, 10 A, R_DS(ON) = 0.65 Ω (typ.), TO-220FP package (non-isolated tab)	Requires insulating pad for heatsink mounting; higher conduction loss increases thermal stress in high-density designs.	Choose when cost sensitivity outweighs thermal performance and isolation requirements.
IXTP10N60P	600 V, 10 A, R_DS(ON) = 0.75 Ω (typ.), TO-220 package (non-isolated tab), no specified t_rr	Lacks fast-recovery body diode data; unsuitable for DCM or QR topologies requiring controlled reverse recovery.	Prefer only in fixed-frequency hard-switched applications where diode recovery is not critical.

Compared with STP10NK60ZFP and IXTP10N60P, TK10A60W5,S5VX offers lower R_DS(ON), faster t_rr, and built-in isolation-enabling simpler thermal design, higher efficiency in resonant topologies, and reduced component count in safety-critical AC-DC systems.

Availability

TK10A60W5,S5VX is available at Aetrix Electronics and suitable for AC-DC power supplies, LED drivers, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for TK10A60W5,S5VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability power MOSFET design.

TK10A60W5,S5VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK10A60W5,S5VX?

The TK10A60W5,S5VX has a maximum continuous drain current (I_D) of 9.7 A at case temperature T_c = 25 °C. This rating decreases with rising case temperature per the derating curve in the datasheet, reaching zero at T_c = 105 °C. For sustained operation, thermal design must ensure T_c remains within limits to maintain safe conduction capability in the TK10A60W5,S5VX.

Does TK10A60W5,S5VX have an electrically isolated package?

Yes, TK10A60W5,S5VX uses the TO-220SIS package with a fully isolated metal tab rated for 2000 V_RMS isolation between drain and mounting surface. This eliminates the need for insulating pads or sil-pads when attaching to heatsinks, simplifying assembly and improving thermal reliability in safety-isolated AC-DC designs using the TK10A60W5,S5VX.

What is the typical reverse recovery time (t_rr) of TK10A60W5,S5VX, and why does it matter?

The TK10A60W5,S5VX has a typical reverse recovery time (t_rr) of 85 ns under test conditions of I_DR = 4.9 A and dI_DR/dt = 100 A/µs. This fast recovery minimizes switching loss and voltage overshoot in discontinuous conduction mode (DCM) flyback converters, directly improving efficiency and reducing EMI-key advantages of the TK10A60W5,S5VX in modern compact power supplies.

Can TK10A60W5,S5VX be used in avalanche mode, and what is its rated energy?

Yes, TK10A60W5,S5VX is rated for single-pulse avalanche operation with E_AS = 134 mJ at T_ch = 25 °C. This specification ensures robustness against transient overvoltage events such as output short circuits or transformer leakage spikes without device failure-making the TK10A60W5,S5VX suitable for unregulated or lightly protected power stages where clamping margin is limited.

What gate drive voltage range is required to fully enhance TK10A60W5,S5VX?

The TK10A60W5,S5VX has a gate threshold voltage (V_th) range of 3–4.5 V (at V_DS = 10 V, I_D = 0.5 mA), and achieves its specified R_DS(ON) of 0.35 Ω (typ.) at V_GS = 10 V. A minimum gate drive of 10 V is recommended for low-loss operation; operation below 8 V increases R_DS(ON) significantly and should be avoided in high-current applications using the TK10A60W5,S5VX.

TK10A60W5,S5VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 720 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK10A60W5,S5VX FAQ

1.How can I place an order for TK10A60W5,S5VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10A60W5,S5VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10A60W5,S5VX reliable?

The price and inventory of TK10A60W5,S5VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10A60W5,S5VX is usually 5 days.

3.What payment methods are accepted for TK10A60W5,S5VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10A60W5,S5VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK10A60W5,S5VX?

TK10A60W5,S5VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10A60W5,S5VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10A60W5,S5VX?

For technical support, including TK10A60W5,S5VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10A60W5,S5VX requirements.

6.How does Aetrix verify that TK10A60W5,S5VX is sourced from the original manufacturer or authorized distributors?

All TK10A60W5,S5VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10A60W5,S5VX meets industry standards.

7.What is the process for return or replacement of TK10A60W5,S5VX?

All TK10A60W5,S5VX units undergo pre-shipment inspection (PSI). If there is an issue with TK10A60W5,S5VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10A60W5,S5VX part is unused and in its original packaging.

Return procedure for TK10A60W5,S5VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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