Toshiba Semiconductor and Storage TK10A60W,S4X

Overview

TK10A60W,S4X from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 600 V V_DSS, 9.7 A continuous drain current, R_DS(ON) = 0.327 Ω (typ.) at V_GS = 10 V, and TO-220SIS package with isolated mounting. It is used in AC-DC adapters and industrial SMPS where efficiency and avalanche ruggedness are critical.

For engineers reviewing the TK10A60W,S4X datasheet, TK10A60W,S4X pinout, TK10A60W,S4X application, or TK10A60W,S4X equivalent, key selection criteria include its 134 mJ single-pulse avalanche energy, 50 V/ns dv/dt ruggedness, gate threshold voltage range (2.7–3.7 V), and thermal resistance (R_th(ch-c) = 4.17 °C/W) - all essential for reliable high-voltage hard-switching designs.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low R_DS(ON) while maintaining fast switching and robust avalanche capability. Its enhancement-mode operation with V_th = 2.7–3.7 V ensures compatibility with standard 10 V gate drivers and enables clean turn-on without external bias circuitry.

The TK10A60W,S4X integrates an intrinsic body diode with t_rr = 250 ns (typ.) and Q_rr = 2.2 µC (typ.), supporting quasi-resonant and discontinuous conduction mode topologies. Its 2000 V_RMS isolation rating allows direct heatsink mounting without insulating hardware in grounded-chassis applications.

Key Specifications

Pinout & Package

TK10A60W,S4X is housed in a TO-220SIS (JEITA SC-67) package with internal isolation between the drain-connected tab and leads. The case is electrically connected to the drain terminal and rated for 2000 V_RMS isolation, enabling direct heatsink mounting without insulating pads in grounded systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP10NK60ZFP and IPP60R041C6, the TK10A60W,S4X delivers superior thermal interface simplicity via its isolated TO-220SIS package, balanced R_DS(ON)/E_AS for mid-power SMPS, and tighter V_th tolerance - making it ideal for standardized adapter platforms requiring long-term supply stability and minimal layout rework.

Availability

TK10A60W,S4X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for TK10A60W,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK10A60W,S4X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact offline power supplies and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for TK10A60W,S4X at 100°C case temperature?

The TK10A60W,S4X has a DC drain current rating of 9.7 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current drops to approximately 5.2 A to maintain T_ch ≤ 150 °C. This value is confirmed in the "Absolute Maximum Ratings" table and validated by thermal resistance data (R_th(ch-c) = 4.17 °C/W).

Does TK10A60W,S4X require a gate resistor for stable switching in a 100 kHz flyback converter?

Yes - the TK10A60W,S4X benefits from an external gate resistor (typically 5–25 Ω) to dampen ringing caused by its 700 pF C_iss and parasitic layout inductance. Data sheet Figure 6.2.1 and dynamic test conditions specify R_G = 25 Ω for switching time measurements, confirming that controlled gate drive is necessary to meet specified t_r = 22 ns and t_f = 5.5 ns values without overshoot.

Is TK10A60W,S4X RoHS compliant and lead-free?

Yes - the TK10A60W,S4X is RoHS compliant and lead-free, as indicated by the underlined lot marking [[G]]/RoHS COMPATIBLE on the device body. Per Toshiba's marking note (Section 7), underlined lot numbers denote RoHS-compliant versions meeting Directive 2011/65/EU, and environmental compliance documentation is available through Toshiba sales representatives.

Can TK10A60W,S4X replace TK10A60D in an existing design?

No - TK10A60W,S4X and TK10A60D are not drop-in replacements. While both are 600 V, 10 A Toshiba MOSFETs, the TK10A60D uses a non-isolated TO-220 package and has different R_DS(ON) (0.42 Ω typ.), V_th (2–4 V), and E_AS (100 mJ). Substituting TK10A60W,S4X would require verifying heatsink isolation, gate drive timing, and avalanche margin - no pin-to-pin or functional equivalence is documented.

What is the typical reverse recovery charge (Q_rr) of the body diode in TK10A60W,S4X?

The typical reverse recovery charge (Q_rr) of the intrinsic body diode in TK10A60W,S4X is 2.2 µC, measured at I_DR = 4.9 A, V_GS = 0 V, V_DD = 400 V, and –dI_DR/dt = 100 A/µs. This value is specified in Section 6.4 "Source-Drain Characteristics" and directly impacts switching loss in quasi-resonant and synchronous rectification topologies.