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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK10A80E,S4X

Name: TK10A80E,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK10A80E,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK10A80E,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK10A80E,S4X.pdf

Description:: MOSFET N-CH 800V 10A TO220SIS

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Product details

Overview

TK10A80E,S4X from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It delivers 800 V drain-source breakdown voltage, 10 A continuous drain current, and a typical R_DS(ON) of 0.7 Ω at V_GS = 10 V, enabling efficient operation in offline SMPS and DC-DC converters.

For engineers reviewing the TK10A80E,S4X datasheet, TK10A80E,S4X pinout, TK10A80E,S4X application, or TK10A80E,S4X equivalent, key selection criteria include its 800 V V_DSS, avalanche energy rating (E_AS = 454 mJ), TO-220SIS package thermal performance (R_th(ch-c) = 2.5 °C/W), and gate threshold range (2.5–4.0 V) for reliable drive compatibility.

Technical Context

This device operates as an enhancement-mode, normally-off switch with a planar vertical structure optimized for ruggedness in hard-switched topologies. Its low Q_gd (18 nC typ.) and moderate C_iss (2000 pF typ.) support stable high-frequency switching up to several hundred kHz while maintaining dv/dt immunity (≥20 V/ns).

The integrated body diode exhibits t_rr = 1200 ns and Q_rr = 12 µC under specified conditions, making it suitable for freewheeling in flyback and forward converters where controlled reverse recovery is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - supports primary-side switching in universal-input AC-DC supplies without derating.
R_DS(ON) (typ.)	0.7 Ω at V_GS = 10 V - enables <1.75 W conduction loss at 5 A, reducing heatsink requirements.
I_D (DC)	10 A - rated for continuous operation at T_c = 25 °C, scalable with thermal management.
E_AS	454 mJ - provides single-pulse avalanche robustness during transient overvoltage events.
V_th	2.5–4.0 V - ensures clean turn-on with standard 5 V or 12 V gate drivers, minimizing shoot-through risk.
C_iss	2000 pF - balances switching speed and EMI control in 100–300 kHz SMPS designs.
dv/dt immunity	≥20 V/ns - prevents false triggering during high-slew-rate voltage transients in bridge configurations.

Pinout & Package

TK10A80E,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated tab, offering enhanced creepage/clearance for high-voltage isolation. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ≤±30 V rating and low-impedance drive due to Q_g = 46 nC.
2 (Drain)	High-side power node	Connected to high-voltage rail; tab is drain-connected and must be insulated from heatsink unless referenced to same potential.
3 (Source)	Power return / reference	Serves as local ground reference for gate driver; carries full load current and influences layout parasitics.

Key Features

Feature	Design Value
Low R_DS(ON)	0.7 Ω typ. reduces conduction losses and improves efficiency in 10–50 W offline adapters.
High V_DSS	800 V rating allows direct use across 400 V DC bus or 230 V AC mains with margin for surge.
Avalanche-rated	Guaranteed 454 mJ single-pulse energy enables robust operation without external snubbers in flyback designs.
Isolated package	TO-220SIS construction provides 2000 V_RMS isolation between drain and mounting surface for safety compliance.
Enhancement mode	V_th window (2.5–4.0 V) ensures predictable turn-on with logic-level or dedicated gate drivers.

Applications

Switching Power Supplies	AC-DC Adapters
Use Scenario: Primary-side switch in 20–60 W flyback converters for industrial and consumer equipment. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding. Use Value: 800 V V_DSS and 454 mJ E_AS eliminate need for clamping circuits during line surges or no-load transients.	Use Scenario: Main switching element in universal-input (90–264 V AC) wall adapters for laptops and monitors. IC Role / Device Role / Timing Role: Fast-turning power transistor synchronized to PWM controller for regulated DC output. Use Value: Low 0.7 Ω R_DS(ON) minimizes conduction loss at 5–10 A peak currents, improving thermal headroom and reliability.
LED Drivers	Industrial Motor Controls
Use Scenario: Constant-current switch in isolated LED drivers for street lighting and commercial fixtures. IC Role / Device Role / Timing Role: High-side switch regulating LED string current through transformer-coupled feedback. Use Value: 1200 ns reverse recovery time and 24 A peak I_rr ensure stable freewheeling without oscillation or excessive diode loss.	Use Scenario: Inverter leg switch in low-power (<1 kW) brushless DC motor drives for HVAC and pumps. IC Role / Device Role / Timing Role: Half-bridge high-side or low-side MOSFET handling 10 A DC bus current with fast commutation. Use Value: dv/dt immunity ≥20 V/ns prevents spurious turn-on during cross-conduction, enhancing system stability.

Switching Power Supplies

AC-DC Adapters

Use Scenario: Primary-side switch in 20–60 W flyback converters for industrial and consumer equipment.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding.

Use Value: 800 V V_DSS and 454 mJ E_AS eliminate need for clamping circuits during line surges or no-load transients.

Use Scenario: Main switching element in universal-input (90–264 V AC) wall adapters for laptops and monitors.

IC Role / Device Role / Timing Role: Fast-turning power transistor synchronized to PWM controller for regulated DC output.

Use Value: Low 0.7 Ω R_DS(ON) minimizes conduction loss at 5–10 A peak currents, improving thermal headroom and reliability.

LED Drivers

Industrial Motor Controls

Use Scenario: Constant-current switch in isolated LED drivers for street lighting and commercial fixtures.

IC Role / Device Role / Timing Role: High-side switch regulating LED string current through transformer-coupled feedback.

Use Value: 1200 ns reverse recovery time and 24 A peak I_rr ensure stable freewheeling without oscillation or excessive diode loss.

Use Scenario: Inverter leg switch in low-power (<1 kW) brushless DC motor drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Half-bridge high-side or low-side MOSFET handling 10 A DC bus current with fast commutation.

Use Value: dv/dt immunity ≥20 V/ns prevents spurious turn-on during cross-conduction, enhancing system stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK80ZFP	800 V V_DSS, R_DS(ON) = 0.85 Ω, Zener-protected gate, TO-220FP package (non-isolated tab)	Requires external gate protection and insulating washer; lower E_AS (320 mJ)	Prefer when cost sensitivity outweighs isolation needs and gate robustness is managed externally.
FQP10N80	800 V V_DSS, R_DS(ON) = 0.85 Ω, standard TO-220, no isolation, higher C_iss (2200 pF)	Lacks drain-to-case isolation; unsuitable for direct heatsink mounting without insulation	Select only if board-level isolation is implemented and thermal interface design accommodates non-isolated tab.

Compared with STP10NK80ZFP and FQP10N80, TK10A80E,S4X offers superior drain-to-case isolation (2000 V_RMS), lower R_DS(ON), and higher avalanche energy-making it preferred for safety-critical, space-constrained, or thermally demanding high-voltage SMPS designs where layout simplicity and reliability margins are prioritized.

Availability

TK10A80E,S4X is available at Aetrix Electronics and suitable for switching power supplies, AC-DC adapters, and industrial LED drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK10A80E,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions with global distribution and automotive-grade qualification capabilities.

The TK10A80E,S4X belongs to Toshiba's π-MOSⅢ high-voltage MOSFET product line, engineered for efficiency, ruggedness, and ease of integration in offline switching power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK10A80E,S4X?

The TK10A80E,S4X is rated for 10 A continuous drain current (I_D) at case temperature T_c = 25 °C. Derating is required above this temperature per the R_th(ch-c) = 2.5 °C/W specification; at T_c = 100 °C, the usable I_D drops to approximately 6.7 A. Always verify thermal design using actual PCB copper area and heatsink performance before finalizing.

Does TK10A80E,S4X have an isolated package, and what is its isolation rating?

Yes, TK10A80E,S4X uses the TO-220SIS package with electrical isolation between the drain-connected tab and mounting surface. Its isolation voltage is rated at 2000 V_RMS, enabling safe direct mounting to grounded heatsinks without additional insulation-critical for meeting IEC/UL safety standards in AC-DC power supplies.

What is the gate threshold voltage range for TK10A80E,S4X, and how does it affect drive requirements?

The TK10A80E,S4X has a gate threshold voltage (V_th) range of 2.5–4.0 V at V_DS = 10 V and I_D = 1 mA. This ensures reliable turn-on with standard 5 V logic or 12 V gate drivers while avoiding unintended conduction from noise. For full enhancement, V_GS ≥ 10 V is recommended to achieve the specified 0.7 Ω R_DS(ON).

Can TK10A80E,S4X withstand avalanche energy, and what is its rated value?

Yes, TK10A80E,S4X is fully rated for single-pulse avalanche operation with E_AS = 454 mJ at T_ch = 25 °C. This capability allows it to absorb inductive energy during switching transients without failure-enabling simplified designs in flyback and resonant converters where snubber networks would otherwise be needed.

What is the typical reverse recovery time of the body diode in TK10A80E,S4X?

The body diode of TK10A80E,S4X has a typical reverse recovery time (t_rr) of 1200 ns under test conditions of I_DR = 10 A, V_GS = 0 V, and -dI_DR/dt = 100 A/µs. This value informs layout decisions for freewheeling paths and impacts EMI generation; designers should account for associated Q_rr = 12 µC in loss calculations.

TK10A80E,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVIII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK10A80E,S4X FAQ

1.How can I place an order for TK10A80E,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10A80E,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10A80E,S4X reliable?

The price and inventory of TK10A80E,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10A80E,S4X is usually 5 days.

3.What payment methods are accepted for TK10A80E,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10A80E,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK10A80E,S4X?

TK10A80E,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10A80E,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10A80E,S4X?

For technical support, including TK10A80E,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10A80E,S4X requirements.

6.How does Aetrix verify that TK10A80E,S4X is sourced from the original manufacturer or authorized distributors?

All TK10A80E,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10A80E,S4X meets industry standards.

7.What is the process for return or replacement of TK10A80E,S4X?

All TK10A80E,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK10A80E,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10A80E,S4X part is unused and in its original packaging.

Return procedure for TK10A80E,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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