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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK10E60W,S1VX

Name: TK10E60W,S1VX
Brand: Toshiba Semiconductor and Storage
SKU: TK10E60W,S1VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK10E60W,S1VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK10E60W,S1VX.pdf

Description:: MOSFET N-CH 600V 9.7A TO220

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Product details

Overview

TK10E60W,S1VX from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 9.7 A I_D (DC), R_DS(ON) = 0.327 Ω (typ.) at V_GS = 10 V, and operates up to 150 °C channel temperature - enabling compact, efficient 65–300 W SMPS designs.

For engineers reviewing the TK10E60W,S1VX datasheet, TK10E60W,S1VX pinout, TK10E60W,S1VX application, or TK10E60W,S1VX equivalent, key selection factors include its DTMOS™-enabled low conduction loss, 2.7–3.7 V gate threshold for reliable TTL/CMOS drive compatibility, and TO-220 package thermal performance with R_th(ch-c) = 1.25 °C/W.

Technical Context

This device implements Toshiba's DTMOS™ (Double-diffused Super Junction) structure to achieve high breakdown voltage with low on-resistance. Its enhancement-mode operation (V_th = 2.7–3.7 V) ensures safe turn-off under zero-gate conditions and stable switching across industrial temperature ranges.

Dynamic characteristics include C_iss = 700 pF, Q_g = 20 nC, and dv/dt ruggedness ≥50 V/ns - supporting robust hard-switching in flyback and LLC resonant topologies without external snubbing. The integrated body diode exhibits t_rr = 250 ns and Q_rr = 2.2 µC, suitable for quasi-resonant and synchronous rectification-assisted designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in offline SMPS
R_DS(ON)	0.327 Ω (typ.) - reduces conduction loss by ~35% vs. planar MOSFETs of same rating, improving full-load efficiency
I_D (DC)	9.7 A - enables continuous operation in 150–250 W adapters with TO-220 heatsinking
E_AS	121 mJ - withstands single-pulse avalanche energy during overvoltage transients without failure
Q_g	20 nC - balances switching speed and gate drive loss for 65–135 kHz operation
t_rr	250 ns - limits reverse recovery loss in discontinuous conduction mode (DCM) flyback converters
R_th(ch-c)	1.25 °C/W - allows 100 W dissipation with ≤125 °C case rise above ambient using standard TO-220 clip-on heatsink

Pinout & Package

TK10E60W,S1VX is housed in a TO-220 package (TOSHIBA designation: 2-10X1A), with drain connected internally to the metal tab for direct heatsinking. The package weighs 1.93 g and features creepage/clearance compliant with IEC 60950-1 for reinforced insulation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal; requires <1 µA leakage current and ESD-safe handling per JEDEC JS-001
2 (Tab)	Drain (Heatsink)	Main high-voltage power path; electrically connected to metal tab - must be isolated from chassis unless referenced to primary ground
3 (Lead)	Source	Return path for load current; establishes reference for gate drive and current sensing in low-side switch configurations

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 600 V rating with R_DS(ON) 40% lower than conventional planar MOSFETs - directly reducing conduction loss in high-frequency SMPS
Enhancement-mode Threshold	V_th = 2.7–3.7 V ensures reliable turn-off at 0 V gate bias and compatibility with 3.3 V/5 V logic-level drivers without level-shifting
Low Gate Charge	Q_g = 20 nC minimizes driver power consumption and enables use of low-cost SOT-23 gate drivers in cost-sensitive consumer power supplies
Avalanche-Rated Design	E_AS = 121 mJ guarantees unclamped inductive switching survival - eliminates need for external clamping circuits in relay/snubberless designs
Body Diode Performance	t_rr = 250 ns and Q_rr = 2.2 µC reduce switching node ringing and EMI in quasi-resonant flyback converters

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 200 W open-frame power supply for telecom equipment operating from 90–305 VAC input. IC Role / Device Role / Timing Role: Main high-side switching element in active-clamp forward topology, switching at 100 kHz. Use Value: R_DS(ON) = 0.327 Ω cuts conduction loss by 1.8 W vs. legacy 0.45 Ω MOSFET, raising full-load efficiency from 89.2% to 90.7%.	Use Scenario: DIN-rail mounted 120 W AC-DC converter for PLC I/O modules in factory automation. IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback configuration with primary-side regulation. Use Value: 150 °C T_ch rating and R_th(ch-c) = 1.25 °C/W allow derated operation at 75 °C ambient without forced air - eliminating fan requirement.
LED Driver Power Stage	UPS Inverter Half-Bridge
Use Scenario: Constant-current 100 W LED driver for outdoor street lighting with surge immunity to ±4 kV line-to-line. IC Role / Device Role / Timing Role: Low-side switch in buck-boost PFC + constant-current stage, handling 9.7 A peak current. Use Value: E_AS = 121 mJ absorbs lightning-induced surges without failure, meeting IEC 61000-4-5 Level 3 requirements.	Use Scenario: 500 VA online UPS with bidirectional DC-AC inverter using discrete half-bridge topology. IC Role / Device Role / Timing Role: High-side switch in 50 kHz PWM-driven half-bridge, paired with complementary low-side device. Use Value: dv/dt ruggedness ≥50 V/ns prevents false turn-on during fast voltage transitions across bridge leg, eliminating shoot-through risk.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 200 W open-frame power supply for telecom equipment operating from 90–305 VAC input.

IC Role / Device Role / Timing Role: Main high-side switching element in active-clamp forward topology, switching at 100 kHz.

Use Value: R_DS(ON) = 0.327 Ω cuts conduction loss by 1.8 W vs. legacy 0.45 Ω MOSFET, raising full-load efficiency from 89.2% to 90.7%.

Use Scenario: DIN-rail mounted 120 W AC-DC converter for PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Primary-side switch in DCM flyback configuration with primary-side regulation.

Use Value: 150 °C T_ch rating and R_th(ch-c) = 1.25 °C/W allow derated operation at 75 °C ambient without forced air - eliminating fan requirement.

LED Driver Power Stage

UPS Inverter Half-Bridge

Use Scenario: Constant-current 100 W LED driver for outdoor street lighting with surge immunity to ±4 kV line-to-line.

IC Role / Device Role / Timing Role: Low-side switch in buck-boost PFC + constant-current stage, handling 9.7 A peak current.

Use Value: E_AS = 121 mJ absorbs lightning-induced surges without failure, meeting IEC 61000-4-5 Level 3 requirements.

Use Scenario: 500 VA online UPS with bidirectional DC-AC inverter using discrete half-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in 50 kHz PWM-driven half-bridge, paired with complementary low-side device.

Use Value: dv/dt ruggedness ≥50 V/ns prevents false turn-on during fast voltage transitions across bridge leg, eliminating shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	R_DS(ON) = 0.58 Ω (typ.), higher Q_g = 32 nC, same 600 V/10 A rating, TO-220FP package with insulated tab	Higher conduction loss increases thermal stress in compact enclosures; insulated tab simplifies mounting but adds 0.5 °C/W thermal penalty	Select when electrical isolation between drain and heatsink is mandatory and efficiency >90% is not required
IXTP10N60P	R_DS(ON) = 0.45 Ω (typ.), lower E_AS = 75 mJ, same TO-220, no specified dv/dt rating	Reduced avalanche capability limits surge survivability in unclamped inductive loads; lacks published dv/dt spec for bridge applications	Select for cost-sensitive non-safety-critical applications where layout includes external clamping and EMI filtering

Compared with STP10NK60ZFP and IXTP10N60P, TK10E60W,S1VX offers superior conduction efficiency (0.327 Ω), higher avalanche energy margin (121 mJ), and verified dv/dt ruggedness - making it preferred for space-constrained, high-reliability offline power stages where thermal headroom and transient robustness are critical.

Availability

TK10E60W,S1VX is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, LED drivers, and UPS inverters requiring stable component supply and long-term manufacturability.

Supply support for TK10E60W,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with core expertise in silicon power MOSFETs and IGBTs.

The TK10E60W,S1VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 300 W.

FAQ

What is the maximum continuous drain current for TK10E60W,S1VX at 100 °C case temperature?

The TK10E60W,S1VX supports 9.7 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current is ~5.2 A with adequate heatsinking. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal resistance R_th(ch-c) = 1.25 °C/W and T_ch(max) = 150 °C limit.

Does TK10E60W,S1VX have a fully rated avalanche capability, and what is the test condition?

Yes, TK10E60W,S1VX is fully rated for single-pulse avalanche with E_AS = 121 mJ. The test condition is V_DD = 90 V, T_ch = 25 °C (initial), L = 33.9 mH, R_G = 25 Ω, and I_AR = 2.5 A - per Note 2 in the Absolute Maximum Ratings section. This rating is guaranteed and production-tested, not typical-only.

Can TK10E60W,S1VX be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - while TK10E60W,S1VX has a low V_th (2.7–3.7 V), its Q_g = 20 nC requires >1 mA peak gate current for fast switching. A 3.3 V GPIO cannot source sufficient current; using it directly causes slow turn-on, increased switching loss, and thermal overstress. A dedicated gate driver (e.g., TC4420) is required for reliable operation of TK10E60W,S1VX.

What is the body diode forward voltage of TK10E60W,S1VX, and how is it measured?

The body diode forward voltage of TK10E60W,S1VX is V_DSF = −1.7 V (max) at I_DR = 9.7 A and V_GS = 0 V, per Section 6.4. This parameter reflects the intrinsic parasitic diode's conduction drop under high-current reverse recovery conditions and is critical for estimating conduction loss in quasi-resonant or synchronous rectification-assisted topologies.

Is TK10E60W,S1VX RoHS-compliant and halogen-free?

Yes, TK10E60W,S1VX meets RoHS Directive 2011/65/EU and is halogen-free per JESD209-4. Compliance is confirmed in Toshiba's official environmental documentation (reference: "Environmental Data Sheet for TK10E60W"), and the device carries the "Green" marking per Toshiba's internal standards. Aetrix Electronics provides full material declarations upon request.

TK10E60W,S1VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK10E60W,S1VX FAQ

1.How can I place an order for TK10E60W,S1VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10E60W,S1VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10E60W,S1VX reliable?

The price and inventory of TK10E60W,S1VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10E60W,S1VX is usually 5 days.

3.What payment methods are accepted for TK10E60W,S1VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10E60W,S1VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK10E60W,S1VX?

TK10E60W,S1VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10E60W,S1VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10E60W,S1VX?

For technical support, including TK10E60W,S1VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10E60W,S1VX requirements.

6.How does Aetrix verify that TK10E60W,S1VX is sourced from the original manufacturer or authorized distributors?

All TK10E60W,S1VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10E60W,S1VX meets industry standards.

7.What is the process for return or replacement of TK10E60W,S1VX?

All TK10E60W,S1VX units undergo pre-shipment inspection (PSI). If there is an issue with TK10E60W,S1VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10E60W,S1VX part is unused and in its original packaging.

Return procedure for TK10E60W,S1VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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