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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK10J80E,S1E

Name: TK10J80E,S1E
Brand: Toshiba Semiconductor and Storage
SKU: TK10J80E,S1E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK10J80E,S1E

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: TK10J80E,S1E.pdf

Description:: MOSFET N-CH 800V 10A TO3P

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Product details

Overview

TK10J80E from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 800 V drain-source breakdown voltage, 10 A DC drain current, and a typical R_DS(ON) of 0.7 Ω at V_GS = 10 V, enabling efficient operation in 400 V bus applications such as server PSUs and telecom rectifiers.

For engineers reviewing the TK10J80E datasheet, TK10J80E pinout, TK10J80E application, or TK10J80E equivalent, key selection criteria include its TO-3P(N) package thermal performance (R_th(ch-c) = 0.5 °C/W), avalanche ruggedness (E_AS = 454 mJ), and gate threshold range (2.5–4.0 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This device operates in enhancement mode with a gate threshold voltage of 2.5–4.0 V at V_DS = 10 V and I_D = 1 mA, ensuring predictable turn-on under standard logic-level gate drive. Its low leakage current (I_DSS ≤ 10 µA at V_DS = 640 V) supports stable high-voltage blocking in standby and light-load conditions.

The MOSFET features integrated body diode characteristics with reverse recovery time (t_rr) of 1200 ns and Q_rr of 12 µC at I_DR = 10 A, indicating suitability for hard-switched topologies where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - Supports 400 V AC-input rectified bus with ≥2× safety margin against transients
R_DS(ON) (typ.)	0.7 Ω at V_GS = 10 V - Enables <1.4 W conduction loss at 5 A DC output current
I_D (DC)	10 A - Rated for continuous operation in 150 W–200 W SMPS designs with heatsink
E_AS	454 mJ - Withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits
R_th(ch-c)	0.5 °C/W - Allows direct mounting to heatsink for thermal management in high-power density layouts
C_iss	2000 pF - Determines gate drive strength requirement; compatible with standard 1–2 A peak gate drivers
Q_g	46 nC - Defines total gate charge needed for full turn-on; impacts switching loss and driver sizing

Pinout & Package

TK10J80E is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated metal tab for direct heatsink mounting and 3-pin through-hole configuration. The case serves as the Drain terminal, enabling low-inductance high-current paths and simplified thermal design.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives PWM signal; requires 2.5–4.0 V threshold to initiate conduction; sensitive to ESD
2: Drain (Heatsink)	High-voltage power node	Connected to switched high-side rail; electrically tied to metal case for thermal conduction
3: Source	Reference/return path	Serves as common return for gate drive and load current; defines ground reference for control circuitry

Key Features

Feature	Design Value
Low R_DS(ON)	0.7 Ω typ. reduces conduction losses in high-current, high-duty-cycle operation
High V_DSS rating	800 V enables use in universal-input offline SMPS without derating concerns
Avalanche energy rating	454 mJ supports robustness against inductive switching stress in non-resonant topologies
Low gate charge	Q_g = 46 nC minimizes driver power consumption and simplifies gate drive design
Thermal resistance	R_th(ch-c) = 0.5 °C/W allows effective heat transfer to external heatsink without thermal interface layers

Applications

Server Power Supply	Industrial AC-DC Converter
Use Scenario: Primary-side switch in 80+ Platinum-rated 500 W server PSU operating from 90–264 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch in active-clamp forward or LLC half-bridge topology. Use Value: 800 V rating accommodates 400 V DC bus with margin; 0.7 Ω R_DS(ON) limits conduction loss to <1.8 W at 6 A RMS, improving efficiency above 94%.	Use Scenario: Main switching element in 300 W industrial DIN-rail power supply for PLCs and HMIs. IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback converter with 100 kHz switching frequency. Use Value: 454 mJ avalanche energy rating ensures reliability during output short-circuit events without snubber redesign.
Telecom Rectifier Module	High-Voltage LED Driver
Use Scenario: Switching transistor in -48 V telecom rectifier with PFC front-end and isolated DC-DC stage. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver interface MOSFET in high-side configuration. Use Value: Low I_DSS (≤10 µA at 640 V) maintains low standby power consumption during no-load operation.	Use Scenario: Constant-current switch in outdoor streetlight driver handling 350 V DC bus from bridge rectifier. IC Role / Device Role / Timing Role: High-side switch controlling LED string current in buck-derived topology. Use Value: TO-3P(N) package enables direct heatsink mounting on aluminum housing, sustaining 10 A pulsed current without thermal throttling.

Server Power Supply

Industrial AC-DC Converter

Use Scenario: Primary-side switch in 80+ Platinum-rated 500 W server PSU operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch in active-clamp forward or LLC half-bridge topology.

Use Value: 800 V rating accommodates 400 V DC bus with margin; 0.7 Ω R_DS(ON) limits conduction loss to <1.8 W at 6 A RMS, improving efficiency above 94%.

Use Scenario: Main switching element in 300 W industrial DIN-rail power supply for PLCs and HMIs.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback converter with 100 kHz switching frequency.

Use Value: 454 mJ avalanche energy rating ensures reliability during output short-circuit events without snubber redesign.

Telecom Rectifier Module

High-Voltage LED Driver

Use Scenario: Switching transistor in -48 V telecom rectifier with PFC front-end and isolated DC-DC stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver interface MOSFET in high-side configuration.

Use Value: Low I_DSS (≤10 µA at 640 V) maintains low standby power consumption during no-load operation.

Use Scenario: Constant-current switch in outdoor streetlight driver handling 350 V DC bus from bridge rectifier.

IC Role / Device Role / Timing Role: High-side switch controlling LED string current in buck-derived topology.

Use Value: TO-3P(N) package enables direct heatsink mounting on aluminum housing, sustaining 10 A pulsed current without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW10NK80Z	800 V, 10 A, R_DS(ON) = 0.85 Ω (typ.), Zener-protected gate, higher C_iss (2300 pF)	Higher gate charge (65 nC) increases driver loss; built-in gate protection eases layout	Prefer when gate robustness outweighs marginal conduction loss penalty
IPP60R190C7	650 V, 12.5 A, R_DS(ON) = 0.19 Ω (typ.), Superjunction, lower Q_g (34 nC)	Lower voltage rating requires derating for 400 V bus; superior efficiency below 300 V input	Select only for 230 V AC-only systems where 650 V rating suffices with margin

Compared with STW10NK80Z and IPP60R190C7, the TK10J80E offers optimal balance of 800 V capability, moderate R_DS(ON), and proven avalanche ruggedness-making it preferred for universal-input, high-reliability industrial SMPS where voltage margin and transient immunity are critical.

Availability

TK10J80E is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for TK10J80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK10J80E belongs to Toshiba's π-MOS™ III family of high-voltage N-channel MOSFETs, engineered specifically for efficiency and ruggedness in offline switching power supplies and industrial motor drives.

FAQ

What is the maximum allowable drain-source voltage for TK10J80E?

The TK10J80E has a rated drain-source breakdown voltage V_(BR)DSS of 800 V, tested at I_D = 10 mA with V_GS = 0 V. This absolute maximum rating defines the highest DC voltage the device can block reliably under static conditions. Operation above this value risks irreversible avalanche breakdown and permanent damage to the TK10J80E.

Does TK10J80E include integrated gate protection?

No, the TK10J80E does not incorporate integrated gate Zener protection. Its gate-source voltage rating is ±30 V, and gate leakage current is specified at ±1 µA max under V_GS = ±30 V. Users must implement external gate clamping (e.g., 15 V Zener) and ESD-safe handling practices to prevent damage to the TK10J80E during assembly or operation.

What is the thermal resistance from channel to case for TK10J80E?

The TK10J80E has a maximum channel-to-case thermal resistance R_th(ch-c) of 0.5 °C/W, measured under specified test conditions. This low value reflects the TO-3P(N) package's direct metal tab contact, enabling efficient heat transfer from the silicon die to an external heatsink-critical for maintaining T_ch ≤ 150 °C in high-power TK10J80E applications.

Can TK10J80E be used in avalanche-mode operation?

Yes, the TK10J80E is characterized for single-pulse avalanche energy E_AS of 454 mJ at T_ch = 25 °C, with test conditions V_DD = 90 V, L = 8.3 mH, R_G = 25 Ω, and I_AR = 10 A. This rating confirms controlled, non-destructive avalanche capability for transient suppression-but repetitive avalanche is not guaranteed and requires careful design validation for the TK10J80E.

What is the gate threshold voltage range for TK10J80E?

The TK10J80E exhibits a gate threshold voltage V_th range of 2.5 V to 4.0 V, measured at V_DS = 10 V and I_D = 1 mA. This specification ensures consistent turn-on behavior across process and temperature variations, allowing compatibility with standard 5 V or 12 V PWM controllers while avoiding false triggering near system noise margins in TK10J80E-based designs.

TK10J80E,S1E Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVIII

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

TK10J80E,S1E FAQ

1.How can I place an order for TK10J80E,S1E through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10J80E,S1E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10J80E,S1E reliable?

The price and inventory of TK10J80E,S1E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10J80E,S1E is usually 5 days.

3.What payment methods are accepted for TK10J80E,S1E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10J80E,S1E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK10J80E,S1E?

TK10J80E,S1E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10J80E,S1E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10J80E,S1E?

For technical support, including TK10J80E,S1E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10J80E,S1E requirements.

6.How does Aetrix verify that TK10J80E,S1E is sourced from the original manufacturer or authorized distributors?

All TK10J80E,S1E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10J80E,S1E meets industry standards.

7.What is the process for return or replacement of TK10J80E,S1E?

All TK10J80E,S1E units undergo pre-shipment inspection (PSI). If there is an issue with TK10J80E,S1E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10J80E,S1E part is unused and in its original packaging.

Return procedure for TK10J80E,S1E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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