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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK10P50W,RQ

Name: TK10P50W,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK10P50W,RQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK10P50W,RQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK10P50W,RQ.pdf

Description:: PB-F POWER MOSFET TRANSISTOR DPA

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Product details

Overview

TK10P50W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using Super Junction DTMOS™ structure, designed as a high-voltage switching element in offline AC-DC converters and DC-DC regulators. It delivers 500 V V_DSS, 9.7 A continuous drain current (T_C = 25 °C), and low R_DS(ON) of 0.327 Ω (typ.) at V_GS = 10 V, enabling efficient operation in 85–265 VAC input SMPS designs.

For engineers reviewing the TK10P50W datasheet, TK10P50W pinout, TK10P50W application, or TK10P50W equivalent, this device is evaluated for high-efficiency flyback and LLC resonant converter topologies requiring avalanche ruggedness (E_AS = 145 mJ), fast switching (t_on = 45 ns, t_off = 75 ns), and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with optimized cell pitch and trench depth to achieve low specific on-resistance while maintaining robust 500 V breakdown voltage. Its enhancement-mode threshold (V_th = 2.7–3.7 V) ensures reliable turn-on with standard PWM ICs and supports gate drive voltages from 10 V to 15 V without risk of spurious conduction.

The device integrates an intrinsic body diode with reverse recovery time (t_rr) of 250 ns (typ.) and Q_rr = 2.2 µC, suitable for hard-switched topologies where diode commutation losses must be minimized. Thermal resistance R_th(ch-c) = 1.57 °C/W enables high-power density mounting on PCB copper areas or heatsinks via its exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands full rectified 375 VDC bus in universal-input offline converters without derating.
R_DS(ON)	0.327 Ω (typ.) at V_GS = 10 V - Enables <1.6 W conduction loss at 4.9 A, reducing thermal load in compact adapters.
I_D (DC)	9.7 A at T_C = 25 °C - Supports ≥65 W output in flyback designs with adequate heatsinking.
E_AS	145 mJ - Sustains single-pulse avalanche events during overvoltage transients without failure.
t_on/t_off	45 ns / 75 ns - Allows >300 kHz switching in resonant topologies while limiting switching loss.
Q_g	20 nC - Matches common PWM IC gate drivers (e.g., UCC28780, ICE2QS03G) without external buffering.
V_th	2.7–3.7 V - Ensures clean turn-on margin above controller output noise and avoids partial-conduction region.

Pinout & Package

TK10P50W is housed in a surface-mount DPAK (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package complies with JEDEC MO-238 and features 0.36 g typical mass and standardized 2-7K1S footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control terminal; requires <20 nC total charge for full enhancement; sensitive to ESD.
2	Drain (Heatsink)	High-voltage power terminal connected to internal die backside; electrically and thermally coupled to PCB copper pour.
3	Source	Reference node for gate drive and current sensing; ties to primary-side ground in isolated flyback converters.

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Reduces R_DS(ON) × area by 40% vs. planar MOSFETs, enabling smaller PCB footprints in high-voltage SMPS.
Low Gate Threshold Spread	V_th = 2.7–3.7 V ensures consistent turn-on across temperature and production lot, minimizing startup delay variation.
Avalanche-Rated Operation	Guaranteed single-pulse E_AS = 145 mJ allows safe operation under inductive switching stress without snubber redesign.
Optimized Body Diode	t_rr = 250 ns and Q_rr = 2.2 µC reduce commutation loss and ringing in quasi-resonant converters.
Thermal Performance	R_th(ch-c) = 1.57 °C/W enables 80 W dissipation at ΔT = 125 °C with minimal heatsink area.

Applications

AC-DC Adapter	Flyback SMPS
Use Scenario: 65 W universal-input wall adapter for laptop and monitor power supplies. IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback topology. Use Value: Low R_DS(ON) reduces conduction loss by 18% vs. legacy 0.5 Ω MOSFETs, improving efficiency from 87% to 89.5% at full load.	Use Scenario: 45 W open-frame power supply for industrial IoT gateways with wide ambient temperature range. IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward converter operating up to 200 kHz. Use Value: Avalanche rating eliminates need for external clamping circuits, simplifying BOM and layout while meeting IEC 61000-4-5 surge immunity.
LED Driver	Server PSU
Use Scenario: Constant-current LED driver for outdoor signage with 300–400 VDC bus. IC Role / Device Role / Timing Role: High-side switch in buck-boost LED controller with analog dimming interface. Use Value: Fast t_off = 75 ns enables precise current regulation at 100 kHz PWM dimming frequency without tail current overshoot.	Use Scenario: Secondary-side synchronous rectifier driver in 1U server PSU with 54 V output rail. IC Role / Device Role / Timing Role: Low-side switch controlling gate of SR MOSFET in LLC resonant half-bridge stage. Use Value: Tight V_th tolerance ensures accurate zero-voltage switching detection timing, reducing body diode conduction loss by 35%.

AC-DC Adapter

Flyback SMPS

Use Scenario: 65 W universal-input wall adapter for laptop and monitor power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: Low R_DS(ON) reduces conduction loss by 18% vs. legacy 0.5 Ω MOSFETs, improving efficiency from 87% to 89.5% at full load.

Use Scenario: 45 W open-frame power supply for industrial IoT gateways with wide ambient temperature range.

IC Role / Device Role / Timing Role: Main switching transistor in active-clamp forward converter operating up to 200 kHz.

Use Value: Avalanche rating eliminates need for external clamping circuits, simplifying BOM and layout while meeting IEC 61000-4-5 surge immunity.

LED Driver

Server PSU

Use Scenario: Constant-current LED driver for outdoor signage with 300–400 VDC bus.

IC Role / Device Role / Timing Role: High-side switch in buck-boost LED controller with analog dimming interface.

Use Value: Fast t_off = 75 ns enables precise current regulation at 100 kHz PWM dimming frequency without tail current overshoot.

Use Scenario: Secondary-side synchronous rectifier driver in 1U server PSU with 54 V output rail.

IC Role / Device Role / Timing Role: Low-side switch controlling gate of SR MOSFET in LLC resonant half-bridge stage.

Use Value: Tight V_th tolerance ensures accurate zero-voltage switching detection timing, reducing body diode conduction loss by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK50ZFP	R_DS(ON) = 0.55 Ω (typ.), higher Q_g = 35 nC, lower E_AS = 75 mJ	Requires larger gate driver and additional avalanche protection in high-stress flyback designs	Preferred where cost sensitivity outweighs efficiency and ruggedness requirements
IPP60R190C7	R_DS(ON) = 0.19 Ω (typ.), 650 V rating, higher C_iss = 1200 pF	Better conduction loss but slower switching due to higher input capacitance; needs gate resistor tuning	Selected when upgrading to 650 V systems or targeting >90% efficiency at >100 kHz

Compared with STP10NK50ZFP and IPP60R190C7, the TK10P50W offers optimal balance of low R_DS(ON), moderate gate charge, and guaranteed avalanche energy-making it ideal for cost-constrained yet reliability-critical 500 V offline SMPS where layout space and thermal headroom are limited.

Availability

TK10P50W is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, LED drivers, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and consumer OEM programs.

Supply support for TK10P50W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of expertise in discrete power semiconductors.

The TK10P50W belongs to Toshiba's DTMOS™ IV family, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 500 V with minimal external components.

FAQ

What is the maximum continuous drain current rating for TK10P50W?

The TK10P50W has a maximum continuous drain current (I_D) of 9.7 A at case temperature T_C = 25 °C. At higher case temperatures, this rating decreases per the SOA curve; for example, it drops to approximately 6.2 A at T_C = 100 °C. Derating must follow the guaranteed maximum PD–T_C curve in Figure 8.15 of the official datasheet.

Does TK10P50W support avalanche operation, and what is its rated energy?

Yes, the TK10P50W is fully rated for single-pulse avalanche operation with guaranteed E_AS = 145 mJ at T_ch = 25 °C (test condition: V_DD = 90 V, L = 39.57 mH, R_G = 25 Ω, I_AR = 2.5 A). This capability allows safe handling of inductive switching transients without external clamping in properly designed flyback converters.

What is the gate threshold voltage range for TK10P50W, and how does it affect drive design?

The TK10P50W has a gate threshold voltage (V_th) range of 2.7 V to 3.7 V at V_DS = 10 V and I_D = 0.5 mA. This tight spread ensures predictable turn-on behavior across temperature and process variation, allowing direct drive from standard 5 V or 10 V PWM controllers without level-shifting or gate biasing networks.

Can TK10P50W be used in place of older DTMOS™ III devices like TK12E50D?

While both are DPAK-packaged 500 V N-channel MOSFETs, the TK10P50W is not a direct drop-in replacement for TK12E50D due to differences in R_DS(ON) (0.327 Ω vs. 0.39 Ω), Q_g (20 nC vs. 25 nC), and thermal resistance (1.57 °C/W vs. 1.75 °C/W). Layout compatibility exists, but gate drive timing and thermal margin should be revalidated.

What package type and pin configuration does TK10P50W use?

The TK10P50W uses the DPAK (TO-252AA) package, designated by Toshiba as 2-7K1S. It has three terminals: Pin 1 = Gate, Pin 2 = Drain (exposed heatsink pad), Pin 3 = Source. The drain pad is electrically connected to the die backside and must be soldered to a large copper area for thermal and electrical performance.

TK10P50W,RQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK10P50W,RQ FAQ

1.How can I place an order for TK10P50W,RQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10P50W,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10P50W,RQ reliable?

The price and inventory of TK10P50W,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10P50W,RQ is usually 5 days.

3.What payment methods are accepted for TK10P50W,RQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10P50W,RQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK10P50W,RQ?

TK10P50W,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10P50W,RQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10P50W,RQ?

For technical support, including TK10P50W,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10P50W,RQ requirements.

6.How does Aetrix verify that TK10P50W,RQ is sourced from the original manufacturer or authorized distributors?

All TK10P50W,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10P50W,RQ meets industry standards.

7.What is the process for return or replacement of TK10P50W,RQ?

All TK10P50W,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK10P50W,RQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10P50W,RQ part is unused and in its original packaging.

Return procedure for TK10P50W,RQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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