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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK10P60W,RVQ

Name: TK10P60W,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK10P60W,RVQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK10P60W,RVQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK10P60W,RVQ.pdf

Description:: MOSFET N CH 600V 9.7A DPAK

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Product details

Overview

TK10P60W from Toshiba is a silicon N-channel power MOSFET using Super Junction DTMOS™ structure, designed for high-voltage switching in offline AC-DC converters and DC-DC regulators. It delivers 600 V V_DSS, 9.7 A I_D (DC), R_DS(ON) = 0.327 Ω (typ.) at V_GS = 10 V, and operates up to 150 °C channel temperature.

For engineers reviewing the TK10P60W datasheet, TK10P60W pinout, TK10P60W application, or TK10P60W equivalent, key selection factors include its DPAK package thermal resistance (R_th(ch-c) = 1.57 °C/W), avalanche energy rating (E_AS = 121 mJ), and gate threshold voltage range (2.7–3.7 V) for reliable drive in flyback and PFC stages.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with optimized super junction charge balance, enabling low conduction loss while maintaining robust dv/dt ruggedness (≥50 V/ns). Its enhancement-mode operation and gate threshold centered at 3.2 V ensure compatibility with standard 5 V and 12 V PWM controllers.

The device integrates an intrinsic body diode with t_rr = 250 ns (typ.) and Q_rr = 2.2 µC, supporting quasi-resonant and hard-switched topologies where diode recovery behavior directly impacts EMI and switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS designs without derating in 230 VAC mains applications
R_DS(ON)	0.327 Ω (typ.) at V_GS = 10 V - enables <1.6 W conduction loss at 4.9 A continuous drain current
I_D (DC)	9.7 A - sufficient for 100–150 W power stages with adequate heatsinking
E_AS	121 mJ - provides margin against single-pulse inductive energy during startup or overload
R_th(ch-c)	1.57 °C/W - allows ~51 W power dissipation before reaching 150 °C channel limit at 25 °C case temperature
Q_g	20 nC - determines gate drive power requirement and influences switching speed in 65–130 kHz converters
dv/dt ruggedness	≥50 V/ns - ensures immunity to false turn-on during high dV/dt commutation in bridge configurations

Pinout & Package

TK10P60W is housed in a surface-mount DPAK (TOSHIBA 2-7K1S) package with exposed drain pad for thermal conduction. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V bias and low-impedance drive due to 20 nC total gate charge
2: Drain (Heatsink)	High-side power terminal	Electrically connected to internal die backside; serves as primary thermal path to PCB copper pour or heatsink
3: Source	Reference/return terminal	Provides return path for load current and reference point for gate drive; must be routed with low inductance to minimize ringing

Key Features

Feature	Design Value
Super Junction DTMOS™ structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size, reducing conduction loss in high-voltage SMPS
Enhancement-mode gate	V_th = 2.7–3.7 V ensures reliable turn-off at 0 V gate bias and stable turn-on with industry-standard 5 V or 12 V controllers
Robust avalanche capability	Guaranteed 121 mJ single-pulse E_AS eliminates need for external snubbers in clamp-based topologies like flyback
Body diode with controlled recovery	t_rr = 250 ns and Q_rr = 2.2 µC reduce switching loss and EMI in discontinuous conduction mode (DCM) operation

Applications

AC-DC Flyback Converter	Active PFC Boost Stage
Use Scenario: Primary-side switch in 65–100 W universal-input offline adapter with 600 V bulk capacitor. IC Role / Device Role / Timing Role: High-voltage power switch operating in discontinuous conduction mode (DCM) at 65–100 kHz. Use Value: Low R_DS(ON) minimizes conduction loss at peak currents; avalanche rating absorbs leakage inductance energy without clamping circuit.	Use Scenario: Switching element in continuous conduction mode (CCM) boost converter for 300–500 W server PSU front-end. IC Role / Device Role / Timing Role: Main power switch handling 9.7 A DC current with 400 V output bus. Use Value: 1.57 °C/W thermal resistance enables direct PCB heatsinking; 20 nC Q_g supports efficient gate drive at 100 kHz.
Industrial LED Driver	DC-DC Isolated Forward Converter
Use Scenario: Primary switch in constant-current LED driver for street lighting with 277 VAC input. IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 50–75 kHz with 600 V blocking requirement. Use Value: ≥50 V/ns dv/dt ruggedness prevents spurious turn-on during transformer reset; low gate charge reduces driver IC loading.	Use Scenario: Primary-side switch in 150 W telecom isolated forward converter with synchronous rectification. IC Role / Device Role / Timing Role: 600 V-rated switch managing 4.9 A average current and 38.8 A pulsed drain current. Use Value: 121 mJ E_AS withstands transformer saturation events; DPAK package simplifies thermal management on double-sided PCB.

AC-DC Flyback Converter

Active PFC Boost Stage

Use Scenario: Primary-side switch in 65–100 W universal-input offline adapter with 600 V bulk capacitor.

IC Role / Device Role / Timing Role: High-voltage power switch operating in discontinuous conduction mode (DCM) at 65–100 kHz.

Use Value: Low R_DS(ON) minimizes conduction loss at peak currents; avalanche rating absorbs leakage inductance energy without clamping circuit.

Use Scenario: Switching element in continuous conduction mode (CCM) boost converter for 300–500 W server PSU front-end.

IC Role / Device Role / Timing Role: Main power switch handling 9.7 A DC current with 400 V output bus.

Use Value: 1.57 °C/W thermal resistance enables direct PCB heatsinking; 20 nC Q_g supports efficient gate drive at 100 kHz.

Industrial LED Driver

DC-DC Isolated Forward Converter

Use Scenario: Primary switch in constant-current LED driver for street lighting with 277 VAC input.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 50–75 kHz with 600 V blocking requirement.

Use Value: ≥50 V/ns dv/dt ruggedness prevents spurious turn-on during transformer reset; low gate charge reduces driver IC loading.

Use Scenario: Primary-side switch in 150 W telecom isolated forward converter with synchronous rectification.

IC Role / Device Role / Timing Role: 600 V-rated switch managing 4.9 A average current and 38.8 A pulsed drain current.

Use Value: 121 mJ E_AS withstands transformer saturation events; DPAK package simplifies thermal management on double-sided PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	600 V, 10 A, R_DS(ON) = 0.65 Ω (typ.), TO-220FP package, higher R_DS(ON) and larger thermal resistance (R_th(j-a) ≈ 50 °C/W)	Suitable for lower-frequency (<50 kHz), lower-power (<60 W) designs where PCB space permits through-hole mounting	Select when cost sensitivity outweighs efficiency and thermal performance; not drop-in due to different package and pinout
IPP60R190C7	600 V, 14.5 A, R_DS(ON) = 0.19 Ω (typ.), TO-220 package, CoolMOS™ C7 technology, lower gate charge (14 nC)	Better suited for high-efficiency, high-density 150+ W designs requiring faster switching and lower conduction loss	Choose for improved efficiency at higher loads; requires gate drive redesign due to lower V_th (2–4 V) and different SOA profile

Compared with STP10NK60ZFP and IPP60R190C7, the TK10P60W offers balanced trade-offs: lower R_DS(ON) than ST's ZFP series but higher than Infineon's C7, and DPAK packaging that simplifies automated assembly and thermal integration versus TO-220 variants-ideal for mid-power SMT-focused industrial supplies.

Availability

TK10P60W is available at Aetrix Electronics and suitable for AC-DC adapters, active PFC modules, and industrial LED drivers requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for TK10P60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET development experience.

The TK10P60W belongs to Toshiba's DTMOS™ IV family, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current rating for TK10P60W at 25 °C case temperature?

The TK10P60W has a DC drain current rating of 9.7 A at T_c = 25 °C. This value assumes ideal heatsinking and is derated linearly above 25 °C per the specified thermal resistance of 1.57 °C/W. At 100 °C case temperature, the usable I_D drops to approximately 5.2 A to maintain T_ch ≤ 150 °C. Always verify actual channel temperature using thermal simulation or measurement in final layout.

Does TK10P60W have avalanche capability, and is it rated for repetitive operation?

Yes, the TK10P60W is rated for single-pulse avalanche energy of 121 mJ under defined test conditions (V_DD = 90 V, L = 33.9 mH, I_AR = 2.5 A). However, Toshiba does not specify or guarantee repetitive avalanche capability. Designers should avoid repeated avalanche events and instead use proper snubber networks or topology selection to prevent inductive energy from exceeding the single-pulse rating during normal operation or fault conditions.

What is the gate threshold voltage range for TK10P60W, and how does it affect controller compatibility?

The TK10P60W has a gate threshold voltage V_th of 2.7–3.7 V (measured at V_DS = 10 V, I_D = 0.5 mA). This range ensures reliable turn-on with standard 5 V logic-level gate drivers and most PWM controllers (e.g., UC384x, TL494), while providing sufficient margin against noise-induced turn-on at 0 V gate bias. For optimal R_DS(ON), a V_GS of 10 V is recommended per datasheet test condition.

Can TK10P60W be used in place of a TO-220 MOSFET in an existing design?

No-TK10P60W uses a DPAK (2-7K1S) surface-mount package with three gull-wing leads, whereas TO-220 devices are through-hole with different pinout, thermal path, and mechanical footprint. Direct substitution would require PCB redesign, new stencil, and requalification of thermal performance. While electrical specs overlap with some TO-220 parts (e.g., STP10NK60ZFP), the TK10P60W is intended for SMT production and compact layouts-not retrofitting legacy through-hole boards.

Is TK10P60W suitable for automotive applications?

No-the TK10P60W is not qualified to AEC-Q101 and lacks automotive-grade screening, extended temperature validation, or failure rate data required for automotive use. Its specification limits (e.g., T_stg = –55 to +150 °C) align with industrial standards, not automotive Grade 0/1 requirements. For automotive power conversion, select Toshiba's AEC-Q101-qualified DTMOS™ devices such as the TK16E60W or equivalent qualified alternatives.

TK10P60W,RVQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 430mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK10P60W,RVQ FAQ

1.How can I place an order for TK10P60W,RVQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK10P60W,RVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK10P60W,RVQ reliable?

The price and inventory of TK10P60W,RVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10P60W,RVQ is usually 5 days.

3.What payment methods are accepted for TK10P60W,RVQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK10P60W,RVQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK10P60W,RVQ?

TK10P60W,RVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK10P60W,RVQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK10P60W,RVQ?

For technical support, including TK10P60W,RVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10P60W,RVQ requirements.

6.How does Aetrix verify that TK10P60W,RVQ is sourced from the original manufacturer or authorized distributors?

All TK10P60W,RVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10P60W,RVQ meets industry standards.

7.What is the process for return or replacement of TK10P60W,RVQ?

All TK10P60W,RVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK10P60W,RVQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK10P60W,RVQ part is unused and in its original packaging.

Return procedure for TK10P60W,RVQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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