Toshiba Semiconductor and Storage TK10V60W,LVQ
- Part No.:
- TK10V60W,LVQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK10V60W,LVQ.pdf
- Description:
- MOSFET N-CH 600V 9.7A 4DFN
- Quantity:
- Payment:

- Shipping:

Inventory:2,346
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Product details
Overview
TK10V60W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 600 V VDSS, 9.7 A continuous drain current, 0.327 Ω typical RDS(ON) at VGS = 10 V, and DFN8x8 surface-mount packaging with integrated heatsink drain. It is used in AC-DC adapters and industrial switching regulators.
For engineers reviewing the TK10V60W datasheet, TK10V60W pinout, TK10V60W application, or TK10V60W equivalent, key selection criteria include avalanche energy rating (74.5 mJ), channel-to-case thermal resistance (1.5 °C/W), gate threshold voltage range (2.7–3.7 V), and diode reverse recovery characteristics (trr = 250 ns, Qrr = 2.2 µC).
Technical Context
This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching and robust dv/dt ruggedness (≥50 V/ns). Its dual-source configuration (Source1 for gate return, Source2 for main current) enables precise control of gate loop inductance and minimizes source inductance effects during hard-switching.
The TK10V60W integrates an intrinsic body diode with characterized reverse recovery behavior (Irr = 19 A, trr = 250 ns) and supports unclamped inductive switching with guaranteed single-pulse avalanche energy of 74.5 mJ at Tch = 25 °C - critical for flyback and resonant converter reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports universal-input offline SMPS designs up to 400 V DC bus with margin. |
| RDS(ON) (typ.) | 0.327 Ω at VGS = 10 V - reduces conduction loss in 10–15 W high-efficiency adapters. |
| ID (DC) | 9.7 A at Tc = 25 °C - enables compact thermal design when mounted on 2-layer PCB with copper pour. |
| EAS | 74.5 mJ - ensures reliable operation under inductive load switching without external snubbers. |
| Rth(ch-c) | 1.5 °C/W - allows direct thermal coupling to heatsink via exposed drain pad for >80 W dissipation capability. |
| trr | 250 ns - limits diode commutation loss in quasi-resonant and ZVS topologies. |
| Qgd | 9.5 nC - balances switching speed and EMI control in 65–100 kHz flyback converters. |
Pinout & Package
Package: DFN8x8 (TOSHIBA designation 2-8T1A), 8 mm × 8 mm × 0.85 mm, thermally enhanced with exposed drain pad (Pin 5) acting as primary heatsink interface. Weight: 0.175 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; requires low-inductance routing to minimize ringing and ensure stable turn-on/turn-off. |
| 2 | Source1 | Gate driver return path; must be connected directly to driver ground to avoid gate loop instability. |
| 3, 4 | Source2 | Main current return; carries full load current - routed with wide copper traces and multiple vias to ground plane. |
| 5 | Drain (Heatsink) | High-voltage output node and thermal interface; soldered to large copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables 600 V rating with RDS(ON) < 0.38 Ω - improves power density vs. planar MOSFETs in same package. |
| Dual-source terminal layout | Separates gate return (Source1) from power return (Source2) - suppresses common-source inductance and improves switching stability. |
| Guaranteed avalanche capability | 74.5 mJ single-pulse EAS - eliminates need for external clamping in cost-sensitive flyback designs. |
| Body diode with controlled Qrr | Qrr = 2.2 µC and trr = 250 ns - reduces diode-induced switching loss and EMI in QR/ZVS converters. |
| dv/dt ruggedness | ≥50 V/ns - prevents false turn-on during high dV/dt transients in bridge-leg or half-bridge configurations. |
Applications
| AC-DC Adapters | Flyback Converters |
|---|---|
|
Use Scenario: Universal-input (90–264 V AC) 12–24 W wall adapters for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology. Use Value: Low RDS(ON) and optimized Qgd enable >88% efficiency at full load while meeting CoC Tier 2 and DOE VI standards. |
Use Scenario: Isolated 36–60 W industrial power supplies with tight regulation and overvoltage protection. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback with valley-switching controller. Use Value: Controlled trr and Qrr reduce diode-related losses and improve light-load efficiency by >3% vs. standard SJ-MOSFETs. |
| LED Drivers | Industrial SMPS |
|
Use Scenario: Constant-current LED drivers for street lighting operating from 277 V AC mains. IC Role / Device Role / Timing Role: High-side switch in buck-boost or SEPIC-derived constant-current regulator. Use Value: 600 V rating and 150 °C Tch max support operation in high-ambient outdoor enclosures without derating. |
Use Scenario: 75–100 W open-frame industrial power supplies requiring long-term reliability and surge immunity. IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant converter. Use Value: Guaranteed EAS and dv/dt ruggedness eliminate failure risk during line surges and transformer saturation events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK60ZFP | 600 V, 10 A, RDS(ON) = 0.65 Ω (typ.), TO-220FP package, no guaranteed EAS spec. | Requires external heatsink and avalanche snubber; higher conduction loss increases thermal footprint. | Preferred where through-hole assembly and legacy board compatibility are required. |
| IXTH10N60L2 | 600 V, 10 A, RDS(ON) = 0.45 Ω (typ.), TO-247 package, EAS = 110 mJ (typ.), but larger footprint. | Higher thermal mass but lower power density; better suited for >150 W designs with forced air cooling. | Chosen when higher avalanche margin and proven field reliability in industrial motor drives are prioritized. |
Compared with STP10NK60ZFP and IXTH10N60L2, the TK10V60W delivers superior power density via its DFN8x8 package and lowest RDS(ON), while offering guaranteed avalanche performance without requiring external components - ideal for space-constrained, high-efficiency offline SMPS.
Availability
TK10V60W is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, and industrial SMPS requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.
Supply support for TK10V60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon power MOSFETs and IGBTs.
The TK10V60W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 600 V.
FAQ
What is the maximum continuous drain current rating for TK10V60W?
The TK10V60W has a maximum continuous drain current (ID) of 9.7 A at case temperature Tc = 25 °C. This rating assumes proper PCB thermal design with adequate copper area under the exposed drain pad. At higher case temperatures, the current must be derated per the Safe Operating Area curve in the TK10V60W datasheet - for example, to ~6.5 A at Tc = 100 °C.
Does TK10V60W have a specified avalanche energy rating?
Yes, the TK10V60W specifies a guaranteed single-pulse avalanche energy (EAS) of 74.5 mJ under test conditions of VDD = 90 V, Tch = 25 °C (initial), L = 20.9 mH, RG = 25 Ω, and IAR = 2.5 A. This rating is validated and guaranteed per Toshiba's production testing protocol, enabling robust unclamped inductive switching in flyback and forward converters.
How should the dual-source pins (2, 3, 4) of TK10V60W be connected in layout?
Pin 2 (Source1) must be used exclusively as the gate driver return path and tied directly to the driver IC ground with minimal trace length. Pins 3 and 4 (Source2) carry the full load current and must be connected to the main power ground plane using wide copper traces and multiple thermal vias. Separating these paths prevents gate loop instability and reduces switching overshoot in the TK10V60W.
What is the gate threshold voltage range for TK10V60W?
The TK10V60W has a gate threshold voltage (Vth) range of 2.7 V to 3.7 V, measured at VDS = 10 V and ID = 0.5 mA. This enhancement-mode characteristic ensures reliable turn-off at logic-level gate drive voltages and supports compatibility with standard 3.3 V or 5 V PWM controllers without level-shifting circuitry in the TK10V60W application.
Is TK10V60W suitable for use in quasi-resonant (QR) flyback converters?
Yes, the TK10V60W is well-suited for QR flyback converters due to its characterized reverse recovery time (trr = 250 ns) and charge (Qrr = 2.2 µC), low Qgd (9.5 nC), and ≥50 V/ns dv/dt ruggedness. These parameters enable clean valley switching, reduced diode stress, and stable operation across line and load variations in the TK10V60W-based QR design.
TK10V60W,LVQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88.3W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN-EP (8x8)
TK10V60W,LVQ FAQ
1.How can I place an order for TK10V60W,LVQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK10V60W,LVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK10V60W,LVQ reliable?
The price and inventory of TK10V60W,LVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK10V60W,LVQ is usually 5 days.
3.What payment methods are accepted for TK10V60W,LVQ?
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TK10V60W,LVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK10V60W,LVQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK10V60W,LVQ?
For technical support, including TK10V60W,LVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK10V60W,LVQ requirements.
6.How does Aetrix verify that TK10V60W,LVQ is sourced from the original manufacturer or authorized distributors?
All TK10V60W,LVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK10V60W,LVQ meets industry standards.
7.What is the process for return or replacement of TK10V60W,LVQ?
All TK10V60W,LVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK10V60W,LVQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK10V60W,LVQ part is unused and in its original packaging.
Return procedure for TK10V60W,LVQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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