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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK110A10PL,S4X

Name: TK110A10PL,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK110A10PL,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK110A10PL,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK110A10PL,S4X.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK110A10PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H process, designed for high-efficiency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 9.1 mΩ (typ., V_GS = 10 V), Q_SW = 9.3 nC (typ.), Q_oss = 32 nC (typ.), and supports V_DSS = 100 V with continuous drain current up to 36 A at T_c = 25 °C.

For engineers reviewing the TK110A10PL,S4X datasheet, TK110A10PL,S4X pinout, TK110A10PL,S4X application, or TK110A10PL,S4X equivalent, key selection criteria include low gate charge for fast switching, low R_DS(ON) for conduction loss reduction, TO-220SIS package thermal performance, and verified avalanche capability (E_AS = 35 mJ) in hard-switching topologies.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve high cell density and reduced specific on-resistance. Its enhancement-mode threshold voltage (V_th = 1.5–2.5 V) enables reliable gate drive with standard 4.5 V or 10 V logic-level sources, while low C_iss (2040 pF) and C_rss (22 pF) support high-frequency operation up to several hundred kHz.

The device integrates an intrinsic body diode with t_rr = 63 ns (typ.) and Q_rr = 45 nC (typ.), making it suitable for synchronous rectification and freewheeling in buck and half-bridge configurations. Its guaranteed single-pulse avalanche energy (E_AS = 35 mJ) and channel temperature limit of 175 °C support robust operation under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines use in 48 V and 60 V bus systems.
R_DS(ON)	9.1 mΩ (typ., V_GS = 10 V) - Low conduction loss enabling <1 W dissipation at 18 A DC, critical for thermal management.
Q_SW	9.3 nC (typ.) - Total gate switch charge; determines driver power requirement and switching transition time.
Q_oss	32 nC (typ.) - Output charge stored in C_oss; directly impacts turn-off loss and resonant behavior in ZVS circuits.
E_AS	35 mJ (typ.) - Single-pulse avalanche energy rating; validates ruggedness during inductive load switching without external snubbers.
R_th(ch-c)	4.16 °C/W - Channel-to-case thermal resistance; enables ~8.6 W power dissipation at ΔT = 36 °C above case temperature.
I_D (DC)	36 A (T_c = 25 °C) - Continuous drain current rating under heatsink-cooled conditions; defines PCB copper and heatsink sizing.

Pinout & Package

TK110A10PL,S4X is housed in a TO-220SIS (Toshiba 2-10U1S) package - a through-hole, isolated-source variant with internal source-to-tab isolation and 2000 V_RMS isolation voltage. The package features a metal tab for direct heatsinking and mechanical mounting torque specification of 0.6 N·m.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤±20 V bias; sensitive to ESD (IGSS ≤ ±0.1 µA).
2 (Drain)	High-side power output	Connected to switched high-voltage rail; carries full load current and withstands 100 V blocking.
3 (Source)	Reference node / return path	Internally isolated from metal tab; serves as local ground reference for gate drive and current sensing.

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 9.1 mΩ R_DS(ON) at 100 V rating - improves power density vs. planar MOSFETs.
Low Q_SW/Q_oss ratio	Q_SW = 9.3 nC, Q_oss = 32 nC - balances switching speed and voltage overshoot in hard-switched converters.
Guaranteed avalanche capability	E_AS = 35 mJ (t = 100 µs) - eliminates need for external clamping in flyback or boost inductor designs.
Enhancement-mode V_th	1.5–2.5 V (V_DS = 10 V, I_D = 0.3 mA) - ensures clean turn-on with 3.3 V or 5 V microcontroller outputs.
Isolated-source TO-220SIS	2000 V_RMS isolation + separate source pin - allows floating gate drive and simplifies high-side configuration.

Applications

Server VRM Power Stage	Industrial DC-DC Brick
Use Scenario: Primary-side high-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ >100 A). IC Role / Device Role / Timing Role: High-current, high-frequency synchronous rectifier switch operating at 300–600 kHz with tight duty-cycle control. Use Value: 9.1 mΩ R_DS(ON) minimizes conduction loss across phases; low Q_SW enables efficient gate drive with integrated DrMOS controllers.	Use Scenario: Isolated secondary-side synchronous rectifier in 48 V input, 12 V/20 A telecom DC-DC modules. IC Role / Device Role / Timing Role: Low-side switch in forward or LLC-synchronous rectifier stage, driven by transformer-coupled gate signals. Use Value: TO-220SIS isolation allows direct mounting to heatsink without insulating pads; 36 A DC rating supports derated 20 A continuous operation.
Brushless DC Motor Inverter	Automotive Auxiliary Power Supply
Use Scenario: Half-bridge leg in 24 V BLDC drives for HVAC blowers or power steering assist units. IC Role / Device Role / Timing Role: Low-side switching element commutating motor phase current with PWM frequencies up to 20 kHz. Use Value: Fast 9 ns rise time and 43 ns turn-off time reduce switching losses; body diode t_rr = 63 ns prevents shoot-through during dead-time.	Use Scenario: Step-down switch in 12 V automotive auxiliary supply converting battery voltage to 5 V/3.3 V for infotainment ECUs. IC Role / Device Role / Timing Role: Main power switch in high-reliability buck regulator exposed to load-dump transients (up to 40 V). Use Value: 100 V V_DSS and 35 mJ E_AS withstand ISO 7637-2 pulse 5a; R_DS(ON) stability over -40 to 150 °C ensures consistent efficiency.

Server VRM Power Stage

Industrial DC-DC Brick

Use Scenario: Primary-side high-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ >100 A).

IC Role / Device Role / Timing Role: High-current, high-frequency synchronous rectifier switch operating at 300–600 kHz with tight duty-cycle control.

Use Value: 9.1 mΩ R_DS(ON) minimizes conduction loss across phases; low Q_SW enables efficient gate drive with integrated DrMOS controllers.

Use Scenario: Isolated secondary-side synchronous rectifier in 48 V input, 12 V/20 A telecom DC-DC modules.

IC Role / Device Role / Timing Role: Low-side switch in forward or LLC-synchronous rectifier stage, driven by transformer-coupled gate signals.

Use Value: TO-220SIS isolation allows direct mounting to heatsink without insulating pads; 36 A DC rating supports derated 20 A continuous operation.

Brushless DC Motor Inverter

Automotive Auxiliary Power Supply

Use Scenario: Half-bridge leg in 24 V BLDC drives for HVAC blowers or power steering assist units.

IC Role / Device Role / Timing Role: Low-side switching element commutating motor phase current with PWM frequencies up to 20 kHz.

Use Value: Fast 9 ns rise time and 43 ns turn-off time reduce switching losses; body diode t_rr = 63 ns prevents shoot-through during dead-time.

Use Scenario: Step-down switch in 12 V automotive auxiliary supply converting battery voltage to 5 V/3.3 V for infotainment ECUs.

IC Role / Device Role / Timing Role: Main power switch in high-reliability buck regulator exposed to load-dump transients (up to 40 V).

Use Value: 100 V V_DSS and 35 mJ E_AS withstand ISO 7637-2 pulse 5a; R_DS(ON) stability over -40 to 150 °C ensures consistent efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(ON) = 8.5 mΩ (V_GS = 10 V); Q_g = 38 nC - higher total gate charge increases driver loss.	Optimized for 100 kHz+ SMPS; less suited for high-current motor drive due to lower I_D rating (110 A pulsed only).	Prefer when lowest R_DS(ON) dominates over switching speed; verify gate drive strength for Q_g = 38 nC.
IRF3205PBF	R_DS(ON) = 8.0 mΩ (V_GS = 10 V); no guaranteed E_AS spec - avalanche ruggedness not characterized.	Legacy part widely used in hobbyist/motor control; lacks isolation and formal automotive qualification.	Select only for cost-sensitive, non-safety-critical designs where avalanche stress is absent and heatsinking is generous.

Compared with STP110N10F7 and IRF3205PBF, TK110A10PL,S4X offers balanced trade-offs: lower Q_SW than STP110N10F7 for faster switching, superior avalanche rating versus IRF3205PBF for reliability in inductive loads, and TO-220SIS isolation enabling simpler high-side gate drive layouts.

Availability

TK110A10PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, long-term industrial lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for TK110A10PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on efficiency, reliability, and system integration.

The TK110A10PL,S4X belongs to Toshiba's U-MOS-H power MOSFET family, engineered specifically for high-frequency, high-current switching applications in industrial power supplies, motor control, and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current rating for TK110A10PL,S4X?

The TK110A10PL,S4X has a maximum continuous drain current (I_D) of 36 A at case temperature T_c = 25 °C. This rating assumes adequate heatsinking and is derated linearly above 25 °C per the R_th(ch-c) = 4.16 °C/W thermal resistance. At T_c = 100 °C, the usable I_D drops to approximately 18 A. Always verify actual channel temperature using thermal simulation or measurement in final layout.

Does TK110A10PL,S4X support logic-level gate drive?

Yes, TK110A10PL,S4X supports logic-level gate drive due to its enhancement-mode threshold voltage range of 1.5–2.5 V (V_DS = 10 V, I_D = 0.3 mA). It fully enhances at V_GS = 4.5 V (R_DS(ON) = 11.4 mΩ typ.) and achieves optimal 9.1 mΩ at V_GS = 10 V. This makes it compatible with 3.3 V and 5 V microcontrollers when paired with appropriate gate drivers.

What is the significance of the TO-220SIS package in TK110A10PL,S4X?

The TO-220SIS package in TK110A10PL,S4X provides 2000 V_RMS isolation between the internal source terminal and the metal tab, enabling direct heatsink mounting without insulating hardware. Unlike standard TO-220AB, this isolation simplifies high-side switch design and improves thermal reliability in multi-rail systems where source potential differs from chassis ground.

How does TK110A10PL,S4X perform under avalanche conditions?

TK110A10PL,S4X is characterized for single-pulse avalanche with E_AS = 35 mJ at T_c = 25 °C (t = 100 µs). This rating confirms ruggedness during inductive turn-off transients in buck, flyback, and motor drive applications. Repeated avalanche operation is not recommended; design should ensure operation within the SOA curve and avoid exceeding the guaranteed E_AS limit.

Is TK110A10PL,S4X RoHS compliant?

Yes, TK110A10PL,S4X is RoHS compliant. Per Toshiba's marking documentation, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU requirements, and material declarations are available upon request from Toshiba sales representatives or via their official website.

TK110A10PL,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.8mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2040 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK110A10PL,S4X FAQ

1.How can I place an order for TK110A10PL,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK110A10PL,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK110A10PL,S4X reliable?

The price and inventory of TK110A10PL,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK110A10PL,S4X is usually 5 days.

3.What payment methods are accepted for TK110A10PL,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK110A10PL,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK110A10PL,S4X?

TK110A10PL,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK110A10PL,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK110A10PL,S4X?

For technical support, including TK110A10PL,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK110A10PL,S4X requirements.

6.How does Aetrix verify that TK110A10PL,S4X is sourced from the original manufacturer or authorized distributors?

All TK110A10PL,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK110A10PL,S4X meets industry standards.

7.What is the process for return or replacement of TK110A10PL,S4X?

All TK110A10PL,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK110A10PL,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK110A10PL,S4X part is unused and in its original packaging.

Return procedure for TK110A10PL,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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