Toshiba Semiconductor and Storage TK110E10PL,S1X

Overview

TK110E10PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H series, designed for high-efficiency switching applications. It delivers R_DS(ON) = 9.0 mΩ (typ.) at V_GS = 10 V, Q_SW = 9.3 nC (typ.), and V_DSS = 100 V, with TO-220 packaging and rated for 42 A DC drain current - deployed in DC-DC converters, voltage regulators, and motor drivers.

For engineers reviewing the TK110E10PL datasheet, TK110E10PL pinout, TK110E10PL application, or TK110E10PL equivalent, key selection criteria include its low gate charge, avalanche-rated ruggedness (E_AS = 32 mJ), thermal resistance (R_th(ch-c) = 1.72 °C/W), and confirmed enhancement-mode threshold (V_th = 1.5–2.5 V).

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_g ratio and optimized Crss support fast, controllable turn-on/turn-off transitions under hard-switching conditions up to 100 V bus voltage.

The device integrates a robust body diode with t_rr = 63 ns (typ.) and Q_rr = 45 nC (typ.), enabling reliable operation in synchronous rectification and freewheeling paths. Absolute maximum channel temperature is 175 °C, with derating required above T_c = 25 °C per R_th(ch-c) = 1.72 °C/W.

Key Specifications

Pinout & Package

Package: TO-220 (TOSHIBA 2-10X1A), through-hole, heatsink-connected drain tab. Weight: 1.96 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IRF540NPBF, the TK110E10PL offers superior switching efficiency (lower Q_SW, Q_oss) and guaranteed avalanche capability - making it preferred for high-frequency, high-reliability industrial converters where thermal management and transient robustness are critical.

Availability

TK110E10PL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply, long-term manufacturability, and traceable sourcing.

Supply support for TK110E10PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK110E10PL belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-frequency, high-current switching applications demanding low R_DS(ON), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current rating for TK110E10PL?

The TK110E10PL is rated for 42 A DC drain current at case temperature T_c = 25 °C. This rating assumes proper heatsinking and derates linearly with increasing T_c per its R_th(ch-c) = 1.72 °C/W specification. At T_c = 100 °C, the practical continuous current drops to approximately 25 A to maintain T_ch ≤ 175 °C. Always verify thermal design using actual board layout and airflow conditions before finalizing.

Does TK110E10PL support logic-level gate drive?

The TK110E10PL has an enhancement-mode threshold voltage of 1.5–2.5 V, enabling turn-on with 3.3 V or 5 V logic signals. However, its R_DS(ON) is specified at V_GS = 10 V (9.0 mΩ typ.), and at V_GS = 4.5 V, R_DS(ON) rises to 16 mΩ (max). For full performance, a 10 V gate drive is recommended; for logic-level operation, confirm acceptable conduction loss in your specific application.

Is TK110E10PL avalanche-rated, and what does that mean for circuit design?

Yes, the TK110E10PL is fully rated for single-pulse avalanche energy (E_AS = 32 mJ) under defined test conditions (V_DD ≈ 80 V, L = 14 µH, I_AS = 42 A). This means it can safely absorb inductive energy during switching transients without failure - reducing or eliminating the need for external snubbers or clamps in motor drives and DC-DC converters with leakage inductance.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK110E10PL, and how should it be used?

The TK110E10PL has a maximum channel-to-case thermal resistance of 1.72 °C/W. This value defines the temperature rise from junction to heatsink mounting surface under steady-state conduction. To calculate junction temperature: T_ch = T_c + (P_tot × R_th(ch-c)). Since T_ch must not exceed 175 °C, this parameter directly constrains allowable power dissipation for a given heatsink temperature - critical for thermal margin validation.

Can TK110E10PL be used as a replacement for IRF540N in existing designs?

The TK110E10PL shares the TO-220 package and pinout with IRF540N, but it is not a drop-in replacement due to significant differences: V_DSS = 100 V (vs. 100 V), R_DS(ON) = 9.0 mΩ (vs. 44 mΩ), and Q_g = 33 nC (vs. 71 nC). While it improves efficiency and switching speed, gate drive requirements and layout thermal management must be re-evaluated. Use only after verifying gate drive strength, layout parasitics, and thermal performance in the target application.