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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK110E65Z,S1X

Name: TK110E65Z,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK110E65Z,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK110E65Z,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK110E65Z,S1X.pdf

Description:: 650V DTMOS VI TO-220 110MOHM

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Product details

Overview

TK110E65Z from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS power MOSFET designed for high-efficiency switching in offline AC-DC power supplies. It delivers 650 V drain-source voltage rating, 24 A DC drain current, and low R_DS(ON) of 0.092 Ω (typ.) at V_GS = 10 V, enabling reduced conduction loss in PFC and main switch stages.

For engineers reviewing the TK110E65Z datasheet, TK110E65Z pinout, TK110E65Z application, or TK110E65Z equivalent, key selection considerations include its TO-220 package thermal performance (R_th(ch-c) = 0.657 °C/W), avalanche energy rating (E_AS = 258 mJ), and fast switching characteristics (t_r = 28 ns, Q_g = 40 nC) for high-frequency SMPS designs.

Technical Context

The TK110E65Z employs Toshiba's DTMOS (Double-diffused Trench MOS) structure to achieve lower gate charge and output capacitance versus planar MOSFETs. Its enhancement-mode operation (V_th = 3–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the integrated body diode supports flyback and LLC resonant topologies.

Thermal design is enabled by direct heatsink mounting via the drain-connected tab (Pin 2), supported by guaranteed R_th(ch-c) ≤ 0.657 °C/W. The device meets industrial-grade reliability requirements with channel temperature limit of 150 °C and storage range of –55 to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports universal-input offline SMPS with margin above 400 V DC bus
R_DS(ON)	0.092 Ω (typ.) - Reduces conduction loss in 24 A continuous switch applications
I_D (DC)	24 A - Enables use as primary-side switch in 300–500 W power supplies
E_AS	258 mJ - Withstands single-pulse avalanche stress without failure in hard-switched circuits
Q_g	40 nC - Low gate charge enables efficient drive with standard gate drivers at >100 kHz
C_iss	2250 pF - Input capacitance optimized for stable high-frequency switching with minimal ringing
R_th(ch-c)	0.657 °C/W - Enables high-power dissipation with compact heatsinking in TO-220 form factor

Pinout & Package

TK110E65Z is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the metal tab electrically connected to the drain and thermally coupled to the heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives gate drive signal; requires ESD-safe handling due to ±30 V V_GSS rating
2 (Drain)	High-voltage power terminal	Connected to heatsink; carries full switched current and must be isolated from other potentials
3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; source inductance impacts switching stability

Key Features

Feature	Design Value
DTMOS trench architecture	Reduces R_DS(ON) × Q_g figure-of-merit by ~30% vs. comparable planar 650 V MOSFETs
Low Crss (1.9 pF)	Minimizes Miller-induced false turn-on during high dv/dt commutation events
Body diode t_rr = 300 ns	Enables soft-recovery behavior in quasi-resonant converters without external snubbers
dv/dt ruggedness ≥ 90 V/ns	Ensures robust operation under fast transient voltage spikes in high-noise power systems
ESD-sensitive gate	Requires handling per JESD22-A114; gate protection circuitry recommended in PCB layout

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main high-side switching element in primary power stage, handling 24 A DC current at 400 V bus. Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses, improving efficiency above 96% at full load.	Use Scenario: 300 W industrial AC-DC adapter for factory automation equipment requiring long-term reliability and wide ambient temperature range. IC Role / Device Role / Timing Role: PFC boost switch operating continuously at 65 °C case temperature with 200 khr lifetime target. Use Value: Guaranteed R_th(ch-c) ≤ 0.657 °C/W and 150 °C max channel temperature support extended thermal margin and field reliability.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: 48 V telecom rectifier with hold-up time requirement, using dual-phase interleaved PFC. IC Role / Device Role / Timing Role: Interleaved PFC switch operating with 12 A per phase, 100 kHz switching frequency. Use Value: Low C_iss and Crss minimize gate drive power and improve phase current balance across paralleled devices.	Use Scenario: 24 V/50 W auxiliary power supply inside liquid-cooled EV on-board charger, exposed to vibration and thermal cycling. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter powering control logic and gate drivers. Use Value: Single-pulse avalanche rating (E_AS = 258 mJ) absorbs leakage inductance energy during no-load transients without derating.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100–500 kHz with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main high-side switching element in primary power stage, handling 24 A DC current at 400 V bus.

Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses, improving efficiency above 96% at full load.

Use Scenario: 300 W industrial AC-DC adapter for factory automation equipment requiring long-term reliability and wide ambient temperature range.

IC Role / Device Role / Timing Role: PFC boost switch operating continuously at 65 °C case temperature with 200 khr lifetime target.

Use Value: Guaranteed R_th(ch-c) ≤ 0.657 °C/W and 150 °C max channel temperature support extended thermal margin and field reliability.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: 48 V telecom rectifier with hold-up time requirement, using dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Interleaved PFC switch operating with 12 A per phase, 100 kHz switching frequency.

Use Value: Low C_iss and Crss minimize gate drive power and improve phase current balance across paralleled devices.

Use Scenario: 24 V/50 W auxiliary power supply inside liquid-cooled EV on-board charger, exposed to vibration and thermal cycling.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter powering control logic and gate drivers.

Use Value: Single-pulse avalanche rating (E_AS = 258 mJ) absorbs leakage inductance energy during no-load transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N65M5	R_DS(ON) = 0.115 Ω (typ.), Q_g = 42 nC, TO-220FP package (isolated tab)	Lower thermal resistance not available; requires insulated mounting hardware	Preferred where electrical isolation between drain and heatsink is mandatory
IPP65R110CFD7	R_DS(ON) = 0.110 Ω (typ.), Q_g = 35 nC, CoolMOS™ CFD7 technology with integrated fast diode	Superior diode recovery (t_rr = 120 ns) but higher cost and tighter gate drive timing constraints	Selected when ultra-fast body diode recovery is critical in ZVS designs

Compared with STP24N65M5 and IPP65R110CFD7, the TK110E65Z offers the lowest R_DS(ON) and highest avalanche energy among TO-220 650 V MOSFETs, making it optimal for thermally constrained, high-reliability offline power stages where drain-to-heatsink conduction is acceptable.

Availability

TK110E65Z is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply and long-lifecycle support.

Supply support for TK110E65Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET development expertise.

The TK110E65Z belongs to Toshiba's DTMOS VI family, engineered specifically for high-efficiency, high-reliability switching power supplies targeting datacenter, industrial, and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK110E65Z at 25 °C case temperature?

The TK110E65Z has a DC drain current rating of 24 A at T_c = 25 °C. This value decreases with rising case temperature per the guaranteed I_D–T_c curve (Fig. 8.17); at 100 °C case, the usable DC current drops to approximately 14 A. Derating must follow the PD–T_c curve (Fig. 8.15) to maintain channel temperature ≤150 °C. The TK110E65Z datasheet specifies these limits under defined test conditions with proper heatsinking.

Does TK110E65Z have an integrated body diode, and what are its reverse recovery characteristics?

Yes, the TK110E65Z includes a monolithic body diode with typical reverse recovery time (t_rr) of 300 ns and peak reverse recovery current (I_rr) of 26 A under specified test conditions (V_DD = 400 V, I_DR = 12 A, –dI_DR/dt = 100 A/µs). Its Q_rr is 3.9 µC, supporting quasi-resonant and LLC topologies without requiring external diode replacement. These values are measured and guaranteed per the TK110E65Z datasheet Section 6.4.

Can TK110E65Z be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK110E65Z is rated for single-pulse avalanche operation with guaranteed E_AS = 258 mJ at T_ch = 25 °C (Note 2, Section 4). This capability allows safe absorption of inductive energy during switching transients in hard-switched converters. Operation beyond single-pulse conditions or at elevated temperatures requires validation against the E_AS–T_ch curve (Fig. 8.14) and adherence to Toshiba's derating guidelines in the Reliability Handbook. The TK110E65Z specification sheet defines all test conditions explicitly.

What is the gate threshold voltage range for TK110E65Z, and how does it affect drive circuit design?

The TK110E65Z has a gate threshold voltage (V_th) range of 3.0 to 4.0 V (V_DS = 10 V, I_D = 1.02 mA), confirming enhancement-mode operation. To ensure full enhancement and low R_DS(ON), gate drive must exceed 10 V (typical test condition for R_DS(ON)). Drive circuits should provide ≥12 V to accommodate tolerance and avoid operation near the threshold region where transconductance is nonlinear. This V_th range is verified in TK110E65Z Section 6.1.

Is TK110E65Z RoHS compliant and lead-free?

Yes, the TK110E65Z is RoHS compliant and lead-free, meeting EU Directive 2011/65/EU requirements. Toshiba confirms this status in its environmental compliance documentation and product marking. The device uses matte tin plating on leads and conforms to JEDEC J-STD-609 Category 1 for lead-free finish. For latest compliance details including REACH and conflict minerals, refer to Toshiba's official environmental reports-these apply directly to the TK110E65Z production lot.

TK110E65Z,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.02mA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2250 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK110E65Z,S1X FAQ

1.How can I place an order for TK110E65Z,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK110E65Z,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK110E65Z,S1X reliable?

The price and inventory of TK110E65Z,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK110E65Z,S1X is usually 5 days.

3.What payment methods are accepted for TK110E65Z,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK110E65Z,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK110E65Z,S1X?

TK110E65Z,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK110E65Z,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK110E65Z,S1X?

For technical support, including TK110E65Z,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK110E65Z,S1X requirements.

6.How does Aetrix verify that TK110E65Z,S1X is sourced from the original manufacturer or authorized distributors?

All TK110E65Z,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK110E65Z,S1X meets industry standards.

7.What is the process for return or replacement of TK110E65Z,S1X?

All TK110E65Z,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK110E65Z,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK110E65Z,S1X part is unused and in its original packaging.

Return procedure for TK110E65Z,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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