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Toshiba Semiconductor and Storage TK11A55D(STA4,Q,M)

Name: TK11A55D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK11A55D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK11A55D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK11A55D(STA4,Q,M).pdf

Description:: MOSFET N-CH 550V 11A TO220SIS

Quantity:: RFQ Add To RFQ list

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Inventory:9,268

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Product details

Overview

TK11A55D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 550 V drain-source breakdown voltage (V_(BR)DSS), 11 A continuous drain current (I_D), and low R_DS(ON) of 0.52 Ω (typ.) at V_GS = 10 V - enabling efficient DC-DC conversion in industrial SMPS and AC-DC adapters.

For engineers reviewing the TK11A55D(STA4,Q,M) datasheet, TK11A55D(STA4,Q,M) pinout, TK11A55D(STA4,Q,M) application, or TK11A55D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 276 mJ), thermal resistance (R_th(ch-c) = 2.78 °C/W), gate charge (Q_g = 25 nC), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of 2.0–4.0 V (V_DS = 10 V, I_D = 1 mA), supporting standard logic-level gate drive. Its π-MOSⅦ process delivers high forward transfer admittance (|Y_fs| = 6.0 S typ.) and low output capacitance (C_oss = 135 pF at V_DS = 25 V), optimizing switching speed and efficiency in hard-switched topologies.

The device integrates an intrinsic body diode with reverse recovery charge Q_rr = 12 μC and t_rr = 1300 ns under specified conditions (I_DR = 11 A, dI_DR/dt = 100 A/μs). Its single-pulse avalanche rating (E_AS = 276 mJ at V_DD = 90 V, L = 3.94 mH) supports robust operation during transient overvoltage events in offline converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	550 V - supports 400 VAC input rectified systems with margin for surge and ringing
R_DS(ON)	0.52 Ω (typ.) at V_GS = 10 V - enables <1.5 W conduction loss at 11 A, reducing heatsink requirements
I_D (continuous)	11 A - rated for sustained output power up to ~250 W in well-cooled TO-220-compatible layouts
Q_g	25 nC - balances switching loss and drive strength for 50–100 kHz SMPS operation
E_AS	276 mJ - withstands single-event inductive energy spikes without failure in flyback or forward converters
R_th(ch-c)	2.78 °C/W - allows 45 W dissipation with ≤125°C case rise above ambient, matching standard heatsink profiles
\|Y_fs\|	6.0 S (typ.) - provides strong transconductance for stable closed-loop regulation under load transients

Pinout & Package

Package: SC-67 (Toshiba 2-10U1B), JEITA-compliant through-hole package with 3-pin layout and 1.7 g typical weight. Thermal pad on drain (Pin 2) enables direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives voltage-controlled signal; requires <25 nC total charge for full turn-on; sensitive to ESD (±30 V max)
2: Drain	High-side power terminal	Connected to primary-side HV rail; electrically tied to metal tab for thermal and electrical conduction
3: Source	Reference/return path	Serves as power ground reference for gate drive; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
π-MOSⅦ process technology	Enables optimized cell density and reduced R_DS(ON) × Q_g figure-of-merit for high-frequency switching
Single-pulse avalanche capability	Rated for 276 mJ energy absorption - eliminates need for external clamping in many flyback designs
Low C_oss and Crss	C_oss = 135 pF, Crss = 6 pF - minimizes capacitive losses and improves zero-voltage switching (ZVS) feasibility
Body diode with controlled Q_rr	Q_rr = 12 μC - reduces diode-induced switching loss and EMI in discontinuous conduction mode (DCM)
RoHS-compliant marking	Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE - meets EU Directive 2011/65/EU without lead exemptions

Applications

Industrial SMPS	AC-DC Adapters
Use Scenario: 100–250 W open-frame power supply for PLC controllers and motor drives. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology. Use Value: 550 V rating and 276 mJ avalanche energy ensure reliable operation during line surges and no-load transients without snubber redesign.	Use Scenario: Universal-input (90–264 VAC) 65 W laptop adapter with active clamp flyback. IC Role / Device Role / Timing Role: Main power switch handling peak currents up to 44 A in pulsed mode. Use Value: Low 0.52 Ω R_DS(ON) and 25 nC Q_g reduce conduction + switching losses, enabling >88% efficiency at full load.
LED Driver Power Stages	UPS Inverter Stages
Use Scenario: Constant-current LED driver for street lighting with 300–400 VDC bus. IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator. Use Value: Tight V_th range (2.0–4.0 V) ensures consistent turn-on across temperature, improving current regulation accuracy.	Use Scenario: Half-bridge inverter stage in 1 kVA online UPS with battery backup. IC Role / Device Role / Timing Role: Low-side switch managing bidirectional energy flow during battery charge/discharge cycles. Use Value: 150 °C channel temperature limit and 2.78 °C/W R_th(ch-c) support sustained 11 A operation with passive cooling in compact enclosures.

Industrial SMPS

AC-DC Adapters

Use Scenario: 100–250 W open-frame power supply for PLC controllers and motor drives.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology.

Use Value: 550 V rating and 276 mJ avalanche energy ensure reliable operation during line surges and no-load transients without snubber redesign.

Use Scenario: Universal-input (90–264 VAC) 65 W laptop adapter with active clamp flyback.

IC Role / Device Role / Timing Role: Main power switch handling peak currents up to 44 A in pulsed mode.

Use Value: Low 0.52 Ω R_DS(ON) and 25 nC Q_g reduce conduction + switching losses, enabling >88% efficiency at full load.

LED Driver Power Stages

UPS Inverter Stages

Use Scenario: Constant-current LED driver for street lighting with 300–400 VDC bus.

IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator.

Use Value: Tight V_th range (2.0–4.0 V) ensures consistent turn-on across temperature, improving current regulation accuracy.

Use Scenario: Half-bridge inverter stage in 1 kVA online UPS with battery backup.

IC Role / Device Role / Timing Role: Low-side switch managing bidirectional energy flow during battery charge/discharge cycles.

Use Value: 150 °C channel temperature limit and 2.78 °C/W R_th(ch-c) support sustained 11 A operation with passive cooling in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK55ZFP	550 V V_DSS, 12 A I_D, R_DS(ON) = 0.58 Ω, Zener-protected gate, TO-220FP package	Higher R_DS(ON) and lower E_AS (120 mJ); integrated gate protection simplifies drive circuit	Preferred where gate robustness outweighs conduction loss; not drop-in due to different pinout and thermal pad configuration
IXTH12N50L	500 V V_DSS, 12 A I_D, R_DS(ON) = 0.45 Ω, ultra-low Q_g = 18 nC, TO-247 package	Lower voltage rating limits use to ≤375 VDC bus; superior switching performance but larger footprint	Selected for higher-frequency (≥200 kHz) designs where 500 V margin suffices and layout space permits TO-247

Compared with STP12NK55ZFP and IXTH12N50L, TK11A55D(STA4,Q,M) offers the highest avalanche energy rating and SC-67 package compatibility with legacy through-hole production lines - making it optimal for cost-sensitive, surge-prone industrial SMPS where reliability trumps ultra-high frequency operation.

Availability

TK11A55D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, and LED driver power stages requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for TK11A55D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability, thermal performance, and application-specific optimization.

The TK11A55D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for ruggedized switching regulator applications demanding high avalanche tolerance, low conduction loss, and stable parametric behavior across temperature.

FAQ

What is the maximum continuous drain current for TK11A55D(STA4,Q,M) at 25°C case temperature?

The TK11A55D(STA4,Q,M) supports a maximum continuous drain current (I_D) of 11 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. Derating is required above 25°C case temperature per the PD–T_c curve, with full derating to zero at 150°C case.

Does TK11A55D(STA4,Q,M) have built-in gate protection against ESD or overvoltage?

No, TK11A55D(STA4,Q,M) does not integrate gate protection circuitry. Its gate-source voltage rating is ±30 V, and it is explicitly labeled as an electrostatic-sensitive device. External gate resistors (e.g., 25 Ω used in avalanche testing) and TVS clamps are recommended in production designs to prevent damage from ESD or transient overvoltage.

Can TK11A55D(STA4,Q,M) be used in synchronous rectification applications?

No, TK11A55D(STA4,Q,M) is not optimized for synchronous rectification. Its body diode has relatively high reverse recovery charge (Q_rr = 12 μC) and long t_rr (1300 ns), which increases switching loss and EMI in SR configurations. Dedicated low-Q_rr MOSFETs with enhanced diodes are preferred for that role.

What is the safe operating area (SOA) limitation for TK11A55D(STA4,Q,M) in linear mode?

In linear (ohmic) operation, TK11A55D(STA4,Q,M) is limited by its maximum channel temperature of 150°C and thermal resistance R_th(ch-c) = 2.78 °C/W. The SOA curve shows that at V_DS = 100 V, continuous DC current must be limited to ≤1.8 A to avoid exceeding 150°C channel temperature - confirming it is intended for switching, not linear, operation.

Is TK11A55D(STA4,Q,M) compliant with the EU RoHS Directive?

Yes, TK11A55D(STA4,Q,M) is RoHS-compliant. Per Toshiba's marking convention, an underlined Lot No. (e.g., K11A55D) indicates [[G]]/RoHS COMPATIBLE status. The device contains no lead beyond RoHS-exempted levels and meets Directive 2011/65/EU requirements for hazardous substances.

TK11A55D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 630mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK11A55D(STA4,Q,M) FAQ

1.How can I place an order for TK11A55D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK11A55D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK11A55D(STA4,Q,M) reliable?

The price and inventory of TK11A55D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK11A55D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK11A55D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK11A55D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK11A55D(STA4,Q,M)?

TK11A55D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK11A55D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK11A55D(STA4,Q,M)?

For technical support, including TK11A55D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK11A55D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK11A55D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK11A55D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK11A55D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK11A55D(STA4,Q,M)?

All TK11A55D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK11A55D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK11A55D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK11A55D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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